Download or read book GaAs Schottky Barrier Avalanche Diodes written by Nils Olov Johnson and published by . This book was released on 1973 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metal Semiconductor Schottky Barrier Junctions and Their Applications written by B.L. Sharma and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present-day semiconductor technology would be inconceivable without extensive use of Schottky barrier junctions. In spite of an excellent book by Professor E.H. Rhoderick (1978) dealing with the basic principles of metal semiconductor contacts and a few recent review articles, the need for a monograph on "Metal-Semiconductor Schottky Barrier Junctions and Their Applications" has long been felt by students, researchers, and technologists. It was in this context that the idea of publishing such a monograph by Mr. Ellis H. Rosenberg, Senior Editor, Plenum Publishing Corporation, was considered very timely. Due to the numerous and varied applications of Schottky barrier junctions, the task of bringing it out, however, looked difficult in the beginning. After discussions at various levels, it was deemed appropriate to include only those typical applications which were extremely rich in R&D and still posed many challenges so that it could be brought out in the stipulated time frame. Keeping in view the larger interest, it was also considered necessary to have the different topics of Schottky barrier junctions written by experts.
Download or read book A Gallium Arsenide Schottky Barrier Avalanche Diode Oscillator written by John Joseph Berenz and published by . This book was released on 1970 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Small signal Characteristics of Gallium Arsenide Schottky Read IMPATT Diodes written by John Joseph Berenz and published by . This book was released on 1977 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1978 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide written by John Sydney Blakemore and published by Springer Science & Business Media. This book was released on 1987 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide Electronics Materials and Devices A Strategic Study of Markets Technologies and Companies Worldwide 1999 2004 written by R. Szweda and published by Elsevier. This book was released on 2000-12-05 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt: The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology. The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors.For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Download or read book Gallium Arsenide Planar Doped Barrier Diodes and Transistors Grown by Molecular Beam Epitaxy written by Roger John Malik and published by . This book was released on 1981 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Download or read book Power Microelectronics Device And Process Technologies Second Edition written by Yung Chii Liang and published by World Scientific. This book was released on 2017-03-14 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: 'This is an excellent reference book for graduates or undergraduates studying semiconductor technology, or for working professionals who need a reference for detailed theory and working knowledge of processes in the field of power semiconductor devices.'IEEE Electrical Insulation MagazineThis descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1986 with total page 1162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Devices and Integrated Electronics written by A. G. Milnes and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt: For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design.
Download or read book Physics and Chemistry of III V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Download or read book VLSI Fabrication Principles written by Sorab K. Ghandhi and published by John Wiley & Sons. This book was released on 1994-03-31 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.
Download or read book Multifrequency Electron Paramagnetic Resonance written by Sushil K. Misra and published by John Wiley & Sons. This book was released on 2011-03-31 with total page 990 pages. Available in PDF, EPUB and Kindle. Book excerpt: Filling the gap for a systematic, authoritative, and up-to-date review of this cutting-edge technique, this book covers both low and high frequency EPR, emphasizing the importance of adopting the multifrequency approach to study paramagnetic systems in full detail by using the EPR method. In so doing, it discusses not only the underlying theory and applications, but also all recent advances -- with a final section devoted to future perspectives.
Download or read book Gallium Arsenide IC Applications Handbook written by and published by Elsevier. This book was released on 1995-09-27 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide IC Applications Handbook is the first text to offer a comprehensive treatment of Gallium Arsenide (GaAs) integrated chip (IC) applications, specifically in microwave systems. The books coverage of GaAs in microwave monolithic ICs demonstrates why GaAs is being hailed as a material of the future for the various advantages it holds over silicon. This volume provides scientists, physicists, electrical engineers, and technology professionals and managers working on microwave technology with practical information on GaAs applications in radar, electronic warfare, communications, consumer electronics, automotive electronics and traffic control. Includes an executive summary in each volume and chapter Facilitates comprehension with its tutorial writing style Covers key technical issues Emphasizes practical aspects of the technology Contains minimal mathematics Provides a complete reference list
Download or read book Heterojunctions and Metal Semiconductor Junctions written by A.G. Milnes and published by Elsevier. This book was released on 2012-12-02 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterojunctions and Metal-Semiconductor Junctions discusses semiconductor-semiconductor heterojunctions and metal-semiconductor heterojunctions, which are of significant practical importance today and also of considerable scientific interest, with worthwhile problems still to be explored and understood. Many classes of heterojunctions are believed to have new and valuable applications. Although some aspects of heterojunction behavior remain areas for continued scientific and technological study, the main outlines of the subject are clear. This book comprises nine chapters, and begins with an introduction to semiconductor heterojunctions. Succeeding chapters then discuss semiconductor p-n heterojunction models and diode behavior; heterojunction transistors; isotype (n-n, p-p) heterojunctions; optical properties of heterojunctions and heterojunction lasers; metal-semiconductor barriers; metal-semiconductor junction behavior; high yield photoemissive cathodes; and fabrication of heterojunctions. This book will be of interest to practitioners in the fields of applied physics.
