Download or read book Energy Research Abstracts written by and published by . This book was released on 1978 with total page 1780 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide written by John Sydney Blakemore and published by Springer Science & Business Media. This book was released on 1987 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Ninth International Conference on Chemical Vapor Deposition 1984 written by McD. Robinson and published by . This book was released on 1984 with total page 828 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Alloys Index written by and published by . This book was released on 1979 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Minerals Yearbook written by United States. Bureau of Mines and published by . This book was released on 1980 with total page 1078 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaAs Microelectronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Download or read book Nondestructive Evaluation of Semiconductor Materials and Devices written by J. Zemel and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 791 pages. Available in PDF, EPUB and Kindle. Book excerpt: From September 19-29, a NATO Advanced Study Institute on Non destructive Evaluation of Semiconductor Materials and Devices was held at the Villa Tuscolano in Frascati, Italy. A total of 80 attendees and lecturers participated in the program which covered many of the important topics in this field. The subject matter was divided to emphasize the following different types of problems: electrical measurements; acoustic measurements; scanning techniques; optical methods; backscatter methods; x-ray observations; accele rated life tests. It would be difficult to give a full discussion of such an Institute without going through the major points of each speaker. Clearly this is the proper task of the eventual readers of these Proceedings. Instead, it would be preferable to stress some general issues. What came through very clearly is that the measurements of the basic scientists in materials and device phenomena are of sub stantial immediate concern to the device technologies and end users.
Download or read book III V Semiconductors written by Herbert C. Freyhardt and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Springer-Verlag, Berlin Heidelberg, in conjunction with Springer-Verlag New York, is pleased to announce a new series: CRYSTALS Growth, Properties, and Applications The series presents critical reviews of recent developments in the field of crystal growth, properties, and applications. A substantial portion of the new series will be devoted to the theory, mechanisms, and techniques of crystal growth. Occasionally, clear, concise, complete, and tested instructions for growing crystals will be published, particularly in the case of methods and procedures that promise to have general applicability. Responding to the ever-increasing need for crystal substances in research and industry, appropriate space will be devoted to methods of crystal characterization and analysis in the broadest sense, even though reproducible results may be expected only when structures, microstructures, and composition are really known. Relations among procedures, properties, and the morphology of crystals will also be treated with reference to specific aspects of their practical application. In this way the series will bridge the gaps between the needs of research and industry, the pos sibilities and limitations of crystal growth, and the properties of crystals. Reports on the broad spectrum of new applications - in electronics, laser tech nology, and nonlinear optics, to name only a few - will be of interest not only to industry and technology, but to wider areas of applied physics as well and to solid state physics in particular. In response to the growing interest in and importance of organic crystals and polymers, they will also be treated.
Download or read book Semiconductor Devices and Integrated Electronics written by A. G. Milnes and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt: For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design.
Download or read book Laser Microfabrication written by Daniel J. Ehrlich and published by Elsevier. This book was released on 1989-06-21 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the solid core of fundamental scientific knowledge on laser-stimulated surface chemistry that has accumulated over the past few years. It provides a useful overview for the student and interested non-expert as well as essential reference data (photodissociation cross sections, thermochemical constants, etc.) for the active researcher.
Download or read book GaAs FET Principles and Technology written by James V. DiLorenzo and published by Artech House Publishers. This book was released on 1982 with total page 808 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Characterization Techniques written by Peter A. Barnes and published by . This book was released on 1978 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Point and Extended Defects in Semiconductors written by Giorgio Benedek and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Download or read book Laser and Electron Beam Processing of Materials written by C.W. White and published by Elsevier. This book was released on 2012-12-02 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser and Electron Beam Processing of Materials contains the papers presented at the symposium on "Laser and Electron Beam Processing of Materials," held in Cambridge, Massachusetts, in November 1979, sponsored by the Materials Research Society. The compilation presents reports and research papers on the use of directed energy sources, such as lasers and electron beams for materials processing. The majority of the materials presented emphasize results on semiconductor materials research. Substantial findings on research on metals, alloys, and other materials are presented as well. Topics covered by the papers include the use of scanned cw sources (both photons and electrons) to recrystallize amorphous layers, enhanced substitutional solubility, solute trapping, zone refining of impurities, and constitutional supercooling. The use of lasers and electron beams to anneal ion implant damage and contacts formation, processing of ion-implanted metals, and surface alloying of films deposited on metallic surfaces are also discussed. Metallurgists, engineers, and materials scientists will find the book very insightful.
Download or read book Report of NRL Progress written by Naval Research Laboratory (U.S.) and published by . This book was released on 1976 with total page 738 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics of Submicron Devices written by David K. Ferry and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips.
Download or read book Deep Centers in Semiconductors written by Sokrates T. Pantelides and published by CRC Press. This book was released on 1992-11-30 with total page 952 pages. Available in PDF, EPUB and Kindle. Book excerpt: Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR
