Download or read book GaAs Technology and Its Impact on Circuits and Systems written by David Haigh and published by Institution of Electrical Engineers. This book was released on 1989 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book captures the essence of developments of Gallium Arsenide technology from the research laboratory to the marketplace along with the dramatic increases in complexity from early single devices to ICs of MSI complexity for both analog and digital applications.

Download or read book GaAs High Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.

Download or read book GaAs Microelectronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

Download or read book Gallium Arsenide Digital Circuits written by Omar Wing and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.

Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Download or read book Control Components Using Si GaAs and GaN Technologies written by Inder J. Bahl and published by Artech House. This book was released on 2014-09-01 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: Control circuits are important parts of RF and microwave systems. Their compact size, high performance, and low cost have played a vital role in the development of cost effective solutions and new applications during the past quarter century. This book provides a comprehensive treatment of such circuits, including device operation and their models, basic circuit theory and designs, and applications. The unique features of this book include in-depth and comprehensive study of control circuits, extensive design equations and figures, treatment of practical aspect of circuits and description of fabrication technologies. It provides you with a broad view of solid state control circuits including various technologies and their comparison and up to date information.

Download or read book An Introduction to GaAs IC Design written by S. J. Harrold and published by . This book was released on 1993 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide Digital Integrated Circuits written by Nick Kanopoulos and published by . This book was released on 1989 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Very Good,No Highlights or Markup,all pages are intact.

Download or read book A Review of the State of the art of GaAs Research written by Christopher M. Snowden and published by . This book was released on 1986 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide IC Applications Handbook written by and published by Elsevier. This book was released on 1995-09-27 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide IC Applications Handbook is the first text to offer a comprehensive treatment of Gallium Arsenide (GaAs) integrated chip (IC) applications, specifically in microwave systems. The books coverage of GaAs in microwave monolithic ICs demonstrates why GaAs is being hailed as a material of the future for the various advantages it holds over silicon. This volume provides scientists, physicists, electrical engineers, and technology professionals and managers working on microwave technology with practical information on GaAs applications in radar, electronic warfare, communications, consumer electronics, automotive electronics and traffic control. Includes an executive summary in each volume and chapter Facilitates comprehension with its tutorial writing style Covers key technical issues Emphasizes practical aspects of the technology Contains minimal mathematics Provides a complete reference list

Download or read book Gallium Arsenide Technology in Europe written by Joseph Mun and published by Springer. This book was released on 1994-05-27 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some of the key milestones in GaAs technology were ftrst demonstrated in Europe, for example, the ftrst GaAs Field Effect Transistor (FET) with microwave performance and the ftrst GaAs Microwave Monolithic Integrated Circuit (MMIC). The strategic nature of GaAs technology has attracted heavy investment from many vertically integrated companies in information technology, communication and defence, as well as from semiconductor manufacturers world wide. Europe always faced strong competition from the USA and Japan and until 1984, European GaAs activities were fragmented amongst various players, with some of the activities loosely grouped into national programmes. In 1984, a number of collaborative projects were established under the European Speciftc Programme on Information Technology (ESPRIT) which crossed national boundaries. It has launched a new and exciting phase for GaAs in Europe and few of those involved at the time could have imagined where such collaboration may lead. In the beginning of those early projects, collaboration was approached with caution and suspicion because after all, many members of a newly formed project team were previously competitors. However, common technology problems soon became apparent and the opportunity to discuss these problems with engineers and scientists from different backgrounds had quickly broken down all barriers. Today, collaboration has become an essential element in European R&D. Collaboration has strengthened the GaAs community and helped to accelerate its growth against difftcult times. This book examines the importance of GaAs technology in Europe and illustrates some of the recent activities pursued under various ESPRIT projects.

Download or read book Journal of the Institution of Electronics and Telecommunication Engineers written by and published by . This book was released on 1990 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Research and Development of a High Performance GaAs Microcomputer System written by and published by . This book was released on 1995 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt: The object ot this research was to achieve an order or magnitude increase in RISC microprocessor computing power over the duration of the project. This was to result in a processor capable of executing MIPS instructions at a sustained rate of 150 million instructions per second, and a peak rate of 250 million instructions per second. We proposed implementing the machine in gallium arsenide direct-coupled FET logic (DCFL) from Vitesse Semiconductor, which showed promise as a high-performance technology. To achieve this goal, the GaAs process would have to be increased substantially over their levels at the beginning of the project. Circuits would have to be designed to take advantage of the inherent speed in GaAs devices while overcoming the limitations of DCFL. Microarchitectures would have to be developed to be appropriate for a processor with this high clock rate. We also proposed developing a comprehensive suite of CAD tools to support the design of such processors. This would include architectural, logic, and circuit simulators; it would build on the technology-independent physical design software of Cascade Design Automation to realize a GaAs circuit compiler.

Download or read book High speed Integrated Circuit Technology written by Mark J. W. Rodwell and published by World Scientific. This book was released on 2001 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology. Contents: Preface (M J W Rodwell); High-Speed and High-Data-Bandwidth Transmitter and Receiver for Multi-Channel Serial Data Communication with CMOS Technology (M Fukaishi et al.); High-Performance Si and SiGe Bipolar Technologies and Circuits (M Wurzer et al.); Self-Aligned Si BJT/SiGe HBT Technology and Its Application to High-Speed Circuits (K Washio); Small-Scale InGaP/GaAs Heterojunction Bipolar Transistors for High-Speed and Low-Power Integrated-Circuit Applications (T Oka et al.); Prospects of InP-Based IC Technologies for 100-Gbit/S-Class Lightwave Communications Systems (T Enoki et al.); Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs (M J W Rodwell); Progress Toward 100 GHz Logic in InP HBT IC Technology (C H Fields et al.); Cantilevered Base InP DHBT for High Speed Digital Applications (A L Gutierrez-Aitken et al.); RSFQ Technology: Physics and Devices (P Bunyk et al.); RSFQ Technology: Circuits and Systems (D K Brock). Readership: Researchers, industrialists and academics in electrical and electronic engineering.

Download or read book Proceedings of the Midwest Symposium on Circuits and Systems written by and published by . This book was released on 1998 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book CMOS Wireless Transceiver Design written by Jan Crols and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 249 pages. Available in PDF, EPUB and Kindle. Book excerpt: The world of wireless communications is changing very rapidly since a few years. The introduction of digital data communication in combination with digital signal process ing has created the foundation for the development of many new wireless applications. High-quality digital wireless networks for voice communication with global and local coverage, like the GSM and DECT system, are only faint and early examples of the wide variety of wireless applications that will become available in the remainder of this decade. The new evolutions in wireless communications set new requirements for the trans ceivers (transmitter-receivers). Higher operating frequencies, a lower power consump tion and a very high degree of integration, are new specifications which ask for design approaches quite different from the classical RF design techniques. The integrata bility and power consumption reduction of the digital part will further improve with the continued downscaling of technologies. This is however completely different for the analog transceiver front-end, the part which performs the interfacing between the antenna and the digital signal processing. The analog front-end's integratability and power consumption are closely related to the physical limitations of the transceiver topology and not so much to the scaling of the used technology. Chapter 2 gives a detailed study of the level of integration in current transceiver realization and analyzes their limitations. In chapter 3 of this book the complex signal technique for the analysis and synthesis of multi-path receiver and transmitter topologies is introduced.

Download or read book Gallium Arsenide Technology in Europe written by Joseph Mun and published by Springer. This book was released on 1994 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some of the key milestones in GaAs technology were ftrst demonstrated in Europe, for example, the ftrst GaAs Field Effect Transistor (FET) with microwave performance and the ftrst GaAs Microwave Monolithic Integrated Circuit (MMIC). The strategic nature of GaAs technology has attracted heavy investment from many vertically integrated companies in information technology, communication and defence, as well as from semiconductor manufacturers world wide. Europe always faced strong competition from the USA and Japan and until 1984, European GaAs activities were fragmented amongst various players, with some of the activities loosely grouped into national programmes. In 1984, a number of collaborative projects were established under the European Speciftc Programme on Information Technology (ESPRIT) which crossed national boundaries. It has launched a new and exciting phase for GaAs in Europe and few of those involved at the time could have imagined where such collaboration may lead. In the beginning of those early projects, collaboration was approached with caution and suspicion because after all, many members of a newly formed project team were previously competitors. However, common technology problems soon became apparent and the opportunity to discuss these problems with engineers and scientists from different backgrounds had quickly broken down all barriers. Today, collaboration has become an essential element in European R&D. Collaboration has strengthened the GaAs community and helped to accelerate its growth against difftcult times. This book examines the importance of GaAs technology in Europe and illustrates some of the recent activities pursued under various ESPRIT projects.