Download or read book GaAs MESFET Circuit Design written by Robert Soares and published by Artech House Publishers. This book was released on 1988 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization Modeling and Circuit Design of GaAs MESFET written by Kang Woo Lee and published by . This book was released on 1984 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaAs MESFET Circuit Design written by Robert Soares and published by Artech House Publishers. This book was released on 1988 with total page 614 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization Modeling and Circuit Design of GaAs Mesfet s written by Kang Woo Lee and published by . This book was released on 1984 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microwave GaAs MESFET Circuit Design Using Time domain Simulation written by Boy Lee Choo and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide Digital Circuits written by Omar Wing and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.

Download or read book Analysis and Modeling of GaAs MESFET s for Linear Integrated Circuit Design written by Mankoo Lee and published by . This book was released on 1990 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is presented by including deep-level trap effects which cause transconductance reduction and the output conductance and the saturation drain current to increase with the applied signal frequency. This model has been incorporated into PSPICE and includes a time dependent I-V curve model, a capacitance model, a subthreshold current model, an RC network describing the effective substrate-induced capacitance and resistance, and a switching resistance providing device symmetry. An analytical approach is used to derive capacitances which depend on Vgs and Vds and is one which also includes the channel/substrate junction modulation by the self backgating effect. A subthreshold current model is analytically derived by the mobile charge density from the parabolic potential distribution in the cut-off region. Sparameter errors between previous models and measured data in conventional GaAs MESFET's have been reduced by including a transit time delay in the transconductances, gm and gds, by the second order Bessel polynomial approximation. As a convenient extraction method, a new circuit configuration is also proposed for extracting simulated S-parameters which accurately predict measured data. Also, a large-signal GaAs MESFET model for performing nonlinear microwave circuit simulations is described. As a linear IC design vehicle for demonstrating the utility of the model, a 3-stage GaAs operational amplifier has been designed and also has been fabricated with results of a 35 dB open-loop gain at high frequencies and a 4 GHz gain bandwidth product by a conventional half micron MESFET technology. Using this new model, the low frequency anomalies of the GaAs amplifier such as a gain roll-off, a phase notch, and an output current lag are more accurately predicted than with any other previous model. This new self-backgating GaAs MESFET model, which provides accurate voltage dependent capacitances, frequency dependent output conductance, and transit time delay dependent transconductances, can be used to simulate low frequency effects in GaAs linear integrated circuit design.

Download or read book Low power Digital Circuit Design in GaAs MESFET Technology written by Riad Kanan and published by . This book was released on 1998 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microwave Circuit Design Using Linear and Nonlinear Techniques written by George D. Vendelin and published by John Wiley & Sons. This book was released on 2005-10-03 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt: The ultimate handbook on microwave circuit design with CAD. Full of tips and insights from seasoned industry veterans, Microwave Circuit Design offers practical, proven advice on improving the design quality of microwave passive and active circuits-while cutting costs and time. Covering all levels of microwave circuit design from the elementary to the very advanced, the book systematically presents computer-aided methods for linear and nonlinear designs used in the design and manufacture of microwave amplifiers, oscillators, and mixers. Using the newest CAD tools, the book shows how to design transistor and diode circuits, and also details CAD's usefulness in microwave integrated circuit (MIC) and monolithic microwave integrated circuit (MMIC) technology. Applications of nonlinear SPICE programs, now available for microwave CAD, are described. State-of-the-art coverage includes microwave transistors (HEMTs, MODFETs, MESFETs, HBTs, and more), high-power amplifier design, oscillator design including feedback topologies, phase noise and examples, and more. The techniques presented are illustrated with several MMIC designs, including a wideband amplifier, a low-noise amplifier, and an MMIC mixer. This unique, one-stop handbook also features a major case study of an actual anticollision radar transceiver, which is compared in detail against CAD predictions; examples of actual circuit designs with photographs of completed circuits; and tables of design formulae.

Download or read book GaAs Microelectronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

Download or read book MMIC Design written by Peter H. Ladbrooke and published by Artech House Microwave Library. This book was released on 1989 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: Detailed information on the principles of integrated design required for successful fabrication of MMIC chips at a reasonable cost. It emphasizes CAD techniques and the effects of material variation. The device modelling techniques presented demonstrate the simulation of overall MMIC chip behavior a

Download or read book The Design of a GaAs MESFET Temperature Independent Voltage Reference Circuit and the Evaluation of GaAs Large Signal MESFET Models written by Raymond K. Hung and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design and Fabrication of Submicron GaAs MESFET Digital Circuits written by Harold Michael Levy and published by . This book was released on 1982 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaAs Technology and Its Impact on Circuits and Systems written by David Haigh and published by Institution of Electrical Engineers. This book was released on 1989 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book captures the essence of developments of Gallium Arsenide technology from the research laboratory to the marketplace along with the dramatic increases in complexity from early single devices to ICs of MSI complexity for both analog and digital applications.

Download or read book The Design of a GaAs MESFET Temperature Independent Voltage Reference Circuit and the Evaluation of GaAs Large Signal MESET Models written by Raymond K. Hung and published by . This book was released on 1986 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book An Introduction to GaAs IC Design written by S. J. Harrold and published by . This book was released on 1993 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.