Download or read book Fundamentals of Silicon Integrated Device Technology written by Robert M. Burger and published by . This book was released on 1968 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamentals of Silicon Integrated Device Technology Oxidation diffusion and epitaxy v 2 Bipolar and unipolar transistors written by Robert M. Burger and published by . This book was released on 1967 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2021-12-02 with total page 627 pages. Available in PDF, EPUB and Kindle. Book excerpt: A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.

Download or read book Silicides Fundamentals Applications written by Francois D'heurle and published by World Scientific. This book was released on 2000-12-18 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such as jet engines), but it is not easy to find an updated reference containing both their basic properties, either chemical or physical, and the latest applications.The 16th Course of the International School of Solid State Physics, held in Erice (Italy) in the late spring of 1999, was intended to break artificial barriers between disciplines, and to gather people concerned with the properties and applications of silicides, regardless of the formal fields to which they belong, or of the practical goals they pursue. This book is therefore concerned with theory as well as applications, metallurgy as well as physics, and materials science as well as microelectronics.

Download or read book Fundamentals of RF and Microwave Techniques and Technologies written by Hans L. Hartnagel and published by Springer Nature. This book was released on 2023-07-28 with total page 1554 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increase of consumer, medical and sensors electronics using radio frequency (RF) and microwave (MW) circuits has implications on overall performances if design is not robust and optimized for a given applications. The current and later generation communication systems and Internet of Thing (IoT) demand for robust electronic circuits with optimized performance and functionality, but low cost, size, and power consumption. As a result, there is a need for a textbook that provides a comprehensive treatment of the subject. This book provides state-of-the-art coverage of RF and Microwave Techniques and Technologies, covers important topics: transmission-line theory, passive and semiconductor devices, active and passive microwave circuits and receiver systems, as well as antennas, noise and digital signal modulation schemes. With an emphasis on theory, design, and applications, this book is targeted to students, teachers, scientists, and practicing design engineers who are interested in broadening their knowledge of RF and microwave electronic circuit design. Readers will also benefit from a unique integration of theory and practice, provides the readers a solid understanding of the RF and microwave concepts, active and passive components, antenna, and modulation schemes. Readers will learn to solve common design problems ranging from selection of components, matching networks to biasing and stability, and digital modulation techniques. More importantly, it provides basic understanding in the analysis and design of RF and microwave circuits in a manner that is practiced in industry. This make sure that the know-how learned in this book can be effortlessly and straightway put into practice without any obstacles.

Download or read book Semiconductor Silicon written by Edward L. Kern and published by . This book was released on 1969 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Devices and Integrated Electronics written by A. G. Milnes and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt: For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design.

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Download or read book NBS Special Publication written by and published by . This book was released on 1970 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.

Download or read book Quick Reference Manual for Silicon Integrated Circuit Technology written by W. E. Beadle and published by Wiley-Interscience. This book was released on 1985 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt: A collection of graphs, charts, measurements, chemical recipes, nomographs and other essential reference data, compiled by the engineers and scientists of AT & T Bell Laboratories. The book furnishes quick answers to questions on the design, development, processing and manufacture of reliable semiconductors. A comprehensive table of physical constants is also provided.

Download or read book Electronic Methods written by E. Bleuler and published by Academic Press. This book was released on 2013-10-22 with total page 461 pages. Available in PDF, EPUB and Kindle. Book excerpt: Methods of Experimental Physics, Volume 2 – Part A: Electronic Methods, Second Edition focuses on techniques and experimental methods involving vacuum-tube and solid-state electronic devices and vacuum-tube circuitry. This volume consists of eight main topics—passive linear circuit elements and networks, semiconductor circuit elements, vacuum tubes, gas tubes, rectifier circuits and power supplies, amplifiers, oscillators, and nonlinear circuits. In these topics, this book specifically discusses the relations between time and frequency response; devices employing bulk semiconductor properties; Richardson-Dushman equation; and gas tube phenomena. The full-wave rectifiers with capacitive load; vacuum tube and field-effect transistor bias circuits; and harmonic oscillators are also elaborated. This text likewise covers the oscillators that use negative resistance devices; field-effect transistors; and analog-to-digital (A/D) converters. This publication is a good source for physicists and students interested in techniques and methods involving electronic equipment.

Download or read book Silicon Device Processing written by Charles P. Marsden and published by . This book was released on 1970 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the Symposium was to provide an opportunity for engineers and applied scientists actively engaged in the silicon device technology field to discuss the most advanced measurement methods for process control and materials characterization.The basic theme of the meeting was to stress the interdependence of measurements techniques, facilities, and materials as they relate to the overall problems of improving and advancing silicon device sciences and technologies.(Author).

Download or read book Physical Chemistry of in and on Silicon written by Gianfranco F. Cerofolini and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to-date review for scientists working in the field ::>f silicon processing. Although a number of works on silicon are already available, the vast amount of existing and new data on silicon properties are nowhere adequately summarized in a single comprehensive report. The present volume is intended to fill this gap. Most of the examples dealt with are taken from the authors' every day experience, this choice being dictated merely by their greater knowl edge of these areas. Certain aspects of the physics of silicon have not been included; this is either because they have been treated in standard textbooks (e.g. the inhomogeneously doped semiconductor and the chem istry of isotropic or preferential aqueous etching of silicon), or because they are still in a rapidly evolving phase (e.g. silicon band-gap engineering, generation-recombination phenomena, cryogenic properties and the chem istry of plasma etching). In line with the standard practice in microelectronics, CGS units will be used for mechanical and thermal quantities, and SI units for electrical quan tities. All atomic energies will be given in electronvolts and the angstrom will be the unit of length used for atomic phenomena.

Download or read book Reference Data for Engineers written by Mac E. Van Valkenburg and published by Elsevier. This book was released on 2001-10-19 with total page 1689 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reference Data for Engineers is the most respected, reliable, and indispensable reference tool for technical professionals around the globe. Written by professionals for professionals, this book is a complete reference for engineers, covering a broad range of topics. It is the combined effort of 96 engineers, scientists, educators, and other recognized specialists in the fields of electronics, radio, computer, and communications technology. By providing an abundance of information on essential, need-to-know topics without heavy emphasis on complicated mathematics, Reference Data for Engineers is an absolute "must-have" for every engineer who requires comprehensive electrical, electronics, and communications data at his or her fingertips. Featured in the Ninth Edition is updated coverage on intellectual property and patents, probability and design, antennas, power electronics, rectifiers, power supplies, and properties of materials. Useful information on units, constants and conversion factors, active filter design, antennas, integrated circuits, surface acoustic wave design, and digital signal processing is also included. The Ninth Edition also offers new knowledge in the fields of satellite technology, space communication, microwave science, telecommunication, global positioning systems, frequency data, and radar.* Widely acclaimed as the most practical reference ever published for a wide range of electronics and computer professionals, from technicians through post-graduate engineers.* Provides a great way to learn or review the basics of various technologies, with a minimum of tables, equations, and other heavy math.

Download or read book Semiconductor Silicon 1977 written by Howard R. Huff and published by . This book was released on 1977 with total page 1170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.