Download or read book Front end Junction and Contact Formation in Future Silicon germanium Based Devices written by and published by . This book was released on 2008 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Front end Junction Formation Technologies written by Daniel F. Downey and published by . This book was released on 2002 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unlike the previous three volumes in the series on silicon front-end processing, this volume expands its focus to include more topics related to formation of ultrashallow junctions. With the challenges presented by the requirements of the sub- 100nm node, the need for new activation technologies which yield minimal diffusion of the dopant while producing high activation are paramount. In addition, the metrology required to measure these shallow profiles in both one and two dimensions becomes more critical. The volume attempts to address these new requirements and potential solutions by covering a variety of topics that include: alternate annealing technologies; device engineering options; dopant activation; epitaxial techniques primarily employing SiGe; defect and diffusion models; characterization using surface analysis techniques; and characterization technologies.
Download or read book Silicon Front End Junction Formation Physics and Technology Volume 810 written by Peter Pichler and published by Cambridge University Press. This book was released on 2004-07-27 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book researchers come together to highlight trends in research on the formation of ultrashallow junctions and their integration into devices. It is generally agreed that conventional RTP processes will not be able to reach the 45nm node of the ITRS. As alternatives, concepts based on solid-phase epitaxy or millisecond-flash annealing, and the use of impurities like fluorine or carbon, are discussed. An important issue for future devices is silicides and germanides. With a trend towards lower process temperatures, interest is directed towards nickel silicides. Of similar importance is the use of silicon-germanium layers in which dopant redistribution is affected by strain effects. Since process development and optimization are hardly conceivable without technology computer-aided design, the potentials and limitations of process simulation are addressed. Additional presentations focus on applications from atomistic modeling to the prediction of ultrashallow junction formation. Applications of state-of -the-art characterization methods are also demonstrated.
Download or read book Low Resistivity Contact Methodologies for Silicon Silicon Germanium and Silicon Carbon Source Drain Junctions of Nanoscale CMOS Integrated Circuits written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: State-of-the-art p-channel metal oxide semiconductor field effect transistors (MOSFETs) employ Si(1-x)Ge(x) source/drain junctions to induce uniaxial compressive strain in the channel region in order to achieve hole mobility enhancement. It is also know that the elec- tron mobility can be enhanced if the MOSFET channel is under uniaxial tension, which can be realized by replacing Si(1-x)Ge(x) with Si(1-y)C(y) epitaxial layers in recessed source/drain regions of n-channel MOSFETs. This dissertation focuses on epitaxy of Si(1-y)C(y) layers and low resistivity contacts on Si, Si(1-x)Ge(x), and Si(1-y)C(y) alloys. While these contacts are of particular importance for future MOSFETs, other devices based on these semiconductors can also benefit from the results presented in this dissertation. The experimental work on Si(1-y)C(y) epitaxiy focused on understanding the impact of various process parameters on carbon incorporation, substitutionality, growth rate, phosphorus incorporation and activation in order to achieve low resistivity Si(1-y)C(y) films with high substitutional carbon levels. It was shown, for the first time, that phosphorus lev- els above 1.3x10^(21) cm^( -3) can be achieved with 1.2% fully substitutional carbon in epitaxial layers. Specific contact resistivity (C) on strained Si(1-x)Ge(x) layers was evaluated using the existent results from the band structure calculations. Previous work on this topic mainly focused on barrier height and the doping density at the interface. In this work, the impact of the tunneling effective mass on specific contact resistivity was calculated for the first time for strained Si(1-x)Ge(x) alloys. It was shown that due to the exponential dependence of contact resistivity on this parameter tunneling effective mass may have a strong impact on contact resistivity. This is especially important for strained alloys in which the tunneling effective mass is dependent on the strain. The contact resistivity was found to decrease with Ge.
Download or read book Silicon Germanium Heterojunction Bipolar Transistors for mm Wave Systems Technology Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Silicon 2002 written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2002 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Electronics World written by and published by . This book was released on 2001 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Download or read book Semiconductor Silicon 2002 written by Howard R. Huff and published by . This book was released on 2002 with total page 690 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ulsi Front end Technology Covering From The First Semiconductor Paper To Cmos Finfet Technology written by Wai Shing Lau and published by World Scientific. This book was released on 2017-08-23 with total page 247 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main focus of this book is ULSI front-end technology. It covers from the early history of semiconductor science & technology from 1874 to state-of-the-art FINFET technology in 2016. Some ULSI back-end technology is also covered, for example, the science and technology of MIM capacitors for analog CMOS has been included in this book.
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Download or read book Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals written by Oleg Velichko and published by World Scientific. This book was released on 2019-11-05 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Download or read book Semiconductor Detector Systems written by Helmuth Spieler and published by OUP Oxford. This book was released on 2005-08-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
