Download or read book Formation of Etch Pits During Carbon Doping of Gallium Arsenide with Carbon Tetrachloride by Metalorganic Vapor phase Epitaxy written by Michael J. Begarney and published by . This book was released on 1998 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth and Doping of Indium Gallium Arsenide and Gallium Arsenide with Carbon Tetrachloride and Silane Using Metalorganic Chemical Vapor Deposition written by Brian T. Hemmelman and published by . This book was released on 1996 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Carbon Doping of Gallium Arsenide and Reflectance Difference Spectroscopy of Compound Semiconductors Grown by Metalorganic Vapor phase Epitaxy written by Michael John Begarney and published by . This book was released on 2000 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Study of Dopant Incorporation Into Gallium Arsenide Grown by Metal orgnic Vapor Phase Epitaxy written by Joan Marie Redwing and published by . This book was released on 1994 with total page 636 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Selective Carbon Doping in Gallium Arsenide Grown by Metalorganic Chemical Vapor Deposition written by Hyukju Jay Moon and published by . This book was released on 1990 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium arsenide Metalorganic Chemical Vapor Deposition with Alkyl Arsenic Sources written by Dietrich W. Vook and published by . This book was released on 1989 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Chemical Vapor Deposition 1960 1980 written by Donald T. Hawkins and published by Springer. This book was released on 1981-11-30 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Carbon Doping of Compound Semiconductor Epitaxial Layers Grown by Metalorganic Chemical Vapor Deposition Using Carbon Tetrachloride written by Brian Thomas Cunningham and published by . This book was released on 1990 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt: A dilute mixture of CCl$sb4$ in high purity H$sb2$ has been used as a carbon dopant source for $rm Alsb{x}Gasb{1-x}As$ grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl$sb4$ doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl$sb4$ doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl$sb4$ flow rate. Although CCl$sb4$ is an effective p-type dopant for MOCVD $rm Alsb{x}Gasb{1-x}As$, injection of CCl$sb4$ into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration. Abrupt, heavy carbon doping spikes in GaAs have been obtained using CCl$sb4$ without a dopant memory effect. By annealing samples with carbon doping spikes grown within undoped, n-type, and p-type GaAs, the carbon diffusion coefficient in GaAs at 825$spcirc$C has been estimated and has been found to depend strongly on the GaAs background doping. Heavily carbon doped $rm Alsb{x}Gasb{1-x}As$/GaAs superlattices have been found to be more stable against impurity induced layer disordering (IILD) than Mg or Zn doped superlattices, indicating that the low carbon diffusion coefficient limits the IILD process. Carbon doping has been used in the base region on an Npn AlGaAs/GaAs heterojunction bipolar transistor (HBT). Transistors with 3 x 10 $mu$m self-aligned emitter fingers have been fabricated which exhibit a current gain cutoff frequency of f$sb{rm t}$ = 26 GHz.

Download or read book Fundamental Growth Processes on Different Gallium Arsenide Surfaces in Metal Organic Vapor Phase Epitaxy written by Markus Pristovsek and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth of Gallium Arsenide Materials and Devices of Metalorganic Chemical Vapor Deposition written by Vilnis Guntis Kreismanis and published by . This book was released on 1984 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Growth of Gallium Arsenide by Organometallic Vapor Phase Epitaxy Using Diethylgallium Chloride and Arsine written by Thomas W. Krygowski and published by . This book was released on 1993 with total page 73 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Vapor Phase Epitaxy of Gallium Arsenide written by Arrigo Addamiano and published by . This book was released on 1973 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs epitaxial layers of good semiconductor quality (comparable to bulk GaAs) have been prepared by the arsine method. The preparative technique and improvements are described. Overall, the arsine system has proved not only reliable but simple as well. The growth rates are reasonably high for practical device fabrication. (Author).

Download or read book Heavily Carbon Doped Gallium Arsenide Grown by Chemical Beam Epitaxy written by Simon Phillip Westwater and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Feedback Control of Organometallic Vapor phase Epitaxial Growth of Aluminum Gallium Arsenide Devices written by Sean Charles Warnick and published by . This book was released on 1995 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Incorporation of Carbon in Gallium Arsenide During Epitaxial Chemical Vapor Deposition from Coordination Compounds written by A. Zaouk and published by . This book was released on 1984 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Incorporation and Diffusion of Zinc and Group III Elements in Gallium Arsenide Using Organometallic Vapor Phase Epitaxy and Open Tube Diffusion written by Chung-Yi Chen and published by . This book was released on 1995 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Studies of the Organometallic Vapour Phase Epitaxial Growth of Gallium Arsenide written by R. D. Hoare and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: