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Book Thin Film Silicide Formation by Thermal Annealing

Download or read book Thin Film Silicide Formation by Thermal Annealing written by Chuen-Der Lien and published by . This book was released on 1985 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Thin Ni Silicide Formation by Low Temperature induced Metal Atom Reaction with Ion Implanted Amorphous Silicon

Download or read book Thin Ni Silicide Formation by Low Temperature induced Metal Atom Reaction with Ion Implanted Amorphous Silicon written by and published by . This book was released on 1992 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have extended our recent work on buried silicide formation by Ni diffusion into a buried amorphous silicon layer to the case where silicide formation is at lower temperatures on silicon substrates which have been preamorphized. The reaction of metal atoms from a 12 nm Ni film evaporated on top of a 65 nm thick surface amorphous layer formed by 35 keV Si ion implantation has been investigated at temperature d"00C. Rutherford Backscattering Spectrometry (RBS) with channeling, cross-sectional transmission electron microscopy (XTEM), x-ray diffraction and four-point-probe measurements were used to determine structure, interfacial morphology, composition and resistivity of the silicide films. It has been found that an increased rate of silicidation occurs for amorphous silicon with respect to crystalline areas permitting a selective control of the silicon area to be contacted during silicide growth. Vacuum furnace annealing at 360C for 8 hours followed by an additional step at 400C for one hour produces a continuos NiSi2 layer with a resistivity 44 [mu][Omega] cm.

Book Formation of Silicide Contacts Using Codeposited Refractory Metals Alloy Films

Download or read book Formation of Silicide Contacts Using Codeposited Refractory Metals Alloy Films written by M. Eizenberg and published by . This book was released on 1984 with total page 33 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contact reactions of a Si substrate and thin films of co-deposited two refractory metals have been studied. Three systems have been chosen Ta-V, Ta-W and Ti-V. As reference also two bilayer structures for each system have been studied (e.g. Ta/W/Si and W/Ta/Si for the Ta-W system). In each system the dependence of the interaction with Si on annealing temperature and on alloy composition is investigated. The interdiffusion and silicide formation have been analyzed by Auger electron spectroscopy and X-Ray diffraction. (Author).

Book Formation of Metal Silicide and Metal Germanosilicide Contacts to Si sub 1 x subscript Ge subscript Alloys

Download or read book Formation of Metal Silicide and Metal Germanosilicide Contacts to Si sub 1 x subscript Ge subscript Alloys written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The goals of this research were to study the phase stability and formation of Ti-Si[subscript 1-x]Ge[subscript x] and Co-Si[subscript 1-x]Ge[subscript x] thin film reactions. The Ti-Si[subscript 1-x]Ge[subscript x] and Co-Si[subscript 1-x]Ge[subscript x] solid phase reactions result in the formation of precipitates within the grain boundaries of the films thus formed. The precipitates are either Ge or a Si-Ge compound, depending on the type of metal used in the reaction. The formation of Ti(Si[subscript 1-y]Ge[subscript y])2 thin films on Si[subscript 1-x]Ge[subscript x] has been examined. It has been found that the generation of Ge-rich Si-Ge precipitates which form in the Ti-Si[subscript 1-x]Ge[subscript x] solid phase reaction could be reduced or eliminated by the insertion of an amorphous Si layer before the metallization step. A Gibbs free energy model, which was parameterized in terms of Ge concentration by atomic percentage was used to determine stability between the Ti(Si[subscript 1-y]Ge[subscript y])2 layer and the Si[subscript 1-x] Ge[subscript x] substrate. The films in this study were characterized using x-ray diffraction (XRD) to investigate phase formation, stability, and the composition of the Ti(Si[subscript 1-y]Ge[subscript y])2 layer. Scanning electron microscopy (SEM) was used to determine the surface morphology and phase stability. It was found that amorphous Si layers of a certain thickness could prevent precipitate formation, depending on the composition of the underlying Si[subscript 1-x] Ge[subscript x] layer. The formation of CoSi2 on Si[subscript 1-x]Ge[subscript x] was also examined. The solid phase reaction of Co and Si[subscript 1-x]Ge[subscript x] results in the formation of a poly-crystalline CoSi2 layer, and the occurrence of a Ge precipitate. The TIME (Titanium Interlayer Mediated Epitaxy) process has been used in the formation of epitaxial CoSi2 on Si (100). A Ti layer of varying thicknesses, whi.