Download or read book Formation and Transport Properties of Defects in Boron doped Silicon Studied Through Tight Binding Bond Models written by Paul Brent Rasband and published by . This book was released on 1996 with total page 662 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book A Study of the Performance of Tight Binding Models for Silicon and Silicon Germanium Alloys written by Amanda Killen Roberts and published by . This book was released on 1998 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Theoretical and Experimental Study of the Temperature and Dopant Density Dependence of Hole Mobility Effective Mass and Resistivity in Boron doped Silicon written by Sheng S. Li and published by . This book was released on 1979 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1995 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Computer Simulation Studies of Vacancy Structures and the Laser Therman Processing of Boron doped Crystalline Silicon written by Decai Yu and published by . This book was released on 2001 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Download or read book Fundamental Studies of Defect Generation in Amorphous Silicon Alloys Grown by Remote Plasma enhanced Chemical vapor Deposition remote PECVD written by G. Lucovsky and published by . This book was released on 1993 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Proceedings of the Second Symposium on Defects in Silicon written by W. Murray Bullis and published by . This book was released on 1991 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation and Experimental Study of Boron Clustering in Crystalline Silicon written by Weiwei Luo and published by . This book was released on 2000 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fundamental Studies of Defect Generation in Amorphous Silicon Alloys Grown by Remote Plasma enhanced Chemical vapor Deposition Remote PECVD Annual Subcontract Report 1 September 1990 31 August 1991 written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We demonstrated that the remote PECVD process can be used to deposit heavily doped n-type and p-type a-Si:H thin films. We optimized conditions for depositing undoped, near-intrinsic and heavily doped thin films of [mu]c(microcrystalline)-Si by remote PECVD. We extended the remote PECVD process to the deposition of undoped and doped a-Si, C:H and [mu]c-Si, C alloy films. We analyzed transport data for the dark conductivity in undoped and doped a-Si:H, a-Si, C:H, [mu]c-Si and [mu]c-Si, C films. We studied the properties of doped a-Si:H and [mu]c-Si in MOS capacitors using [approximately]10 [Omega]-cm p-type crystalline substrates and thermally grown Si0[sub 2] dielectric layers. We collaborated with a group at RWTH in Aachen, Germany, and studied the contributions of process induced defect states to the recombination of photogenerated electron pairs. We applied a tight-binding model to Si-Bethe lattice structures to investigate the effects of bond angle, and dihedral angle disorder. We used ab initio and empirical calculations to study non-random bonding arrangements in a-Si, O:H and doped a-Si:H films.
Download or read book Boron oxygen related defects in crystalline silicon written by Bianca Lim and published by Sudwestdeutscher Verlag Fur Hochschulschriften AG. This book was released on 2012 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solar cells based on crystalline silicon have already achieved efficiencies greater than 24%. In current production, however, the performance of the vast majority of crystalline silicon solar cells is well below that. The reasons for this disparity are manifold. Poor material quality is one important aspect. Material quality can be reduced by crystallographic defects and undesired impurities. In monocrystalline Czochralski silicon an important impurity is oxygen. While on its own harmless, in combination with boron, a common dopant in silicon solar cells, it is known to lead to a critical light-induced degradation of the material quality and with it cell efficiency. This phenomenon has been extensively studied in recent years and yet the true nature of the defect responsible for the degradation effect has proved to be elusive. In this work, the formation, recovery kinetics as well as the composition of these boron-oxygen-related defects was investigated in compensated silicon. This allowed for a separate investigation of the effects of boron concentration and the doping concentration not possible before. In addition, with regard to the new results, a new defect model was developed.
Download or read book The Metal insulator Transition in Boron doped Silicon written by Peihua Dai and published by . This book was released on 1991 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Science and Technology of Defects in Silicon written by C.A.J. Ammerlaan and published by Elsevier. This book was released on 2014-01-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
