Download or read book Film Stress Measurements on Thermally Oxidized Silicon written by Edward Kobeda and published by . This book was released on 1988 with total page 414 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A Measurement of the Effect of Intrinsic Film Stress on the Overall Rate of Thermal Oxidation of Silicon written by J. K. Srivastava and published by . This book was released on 1985 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, in our laboratory more extensive intrinsic stress measurements have been made and these measurements will be reported separately. So while the existence of a compressive intrinsic Si02 film stress has been experimentally verified, the experimental verification of the effects of the stress on oxidation kinetics remains a matter of speculation within the various models. Along with the development of an intrinsic film stress due to the molar volume change during the oxidation of Si, a Si02 film density increase occurs and has been measured. We consider the intrinsic stress and density increases to have a common origin in the nature of the Si oxidation process on a single crystal Si surface. The present communication provides a rather direct experimental measurement of the effect of the compressive intrinsic film stress and/or oxide density on the Si oxidation kinetics. All the Si wafers used were lightly P doped n-type (100) oriented commercially available high quality single crystal Si slices.

Download or read book Intrinsic SiO2 Film Stress Measurements on Thermally Oxidized Si written by E. Kobeda and published by . This book was released on 1986 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have investigated the effects of varying Si oxidation conditions on intrinsic film stress for Si02 films formed on Si. This study includes stress measurements on four Si orientations: (100), (110), (111), and (311); at oxidation temperatures ranging from 700-1100 C; wet (H20) vs. dry (02) oxidations for (100) and (111) surfaces; and the effects of post-oxidation annealing on stress. We find an orientation dependence for intrinsic stress which scales in the following manner: (110)> (311)> (100)> (111); a reduction in stress for wet vs. dry studies; and an even larger reduction for post-oxidation anneals. A recently proposed step model seems to account for the differences in stress with Si orientation. A number of Si oxidation models based on intrinsic stress are compared in their ability to describe the observed behavior, and we conclude that within the Deal-Grove oxidation model, the linear rate constant is strongly influenced by stress in the initial regime while stress is also likely to be important for thicker films.

Download or read book SiO2 Film Stress Distribution During Thermal Oxidation of Si written by E. Kobeda and published by . This book was released on 1987 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt: A laser reflection technique is used to investigate the relaxation of Silicon dioxide film stress which occurs during the dry thermal oxidation of Silicon between 700 and 1000 C. Included is a determination of the stress distribution in the oxide by two independent methods: 1) measurement on oxides of various thicknesses from 100 to 800 A, and 2) repeated stress measurements on chemically thinned SiO2 films, viz. etch back analysis toward the interface. Agreement is found between these experiments. These thin film stress measurements are achieved by the use of ultra-thin Si substrates 75 micrometers). Essentially, an increase in film stress with decreasing film thickness is observed. Rapid stress relaxation is observed for all temperatures studied and is attributed to a time-dependent oxide viscosity. The influence of these measured properties on the kinetics of Si oxidation is discussed.

Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Download or read book An analysis of thin film stress with application to thermal oxidation of silicon written by Paul E. Murray and published by . This book was released on 1989 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1989 with total page 1134 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon Oxidation Simulation written by Gabriel Matthew Cuka and published by . This book was released on 1990 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Semiconductor Interconnection Technology written by Geraldine Cogin Shwartz and published by CRC Press. This book was released on 2006-02-22 with total page 533 pages. Available in PDF, EPUB and Kindle. Book excerpt: First introduced about a decade ago, the first edition of the Handbook of Semiconductor Interconnection Technology became widely popular for its thorough, integrated treatment of interconnect technologies and its forward-looking perspective. The field has grown tremendously in the interim and many of the "likely directions" outlined in the first ed

Download or read book Reduced Thermal Processing for ULSI written by R.A. Levy and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics.

Download or read book Second Order Non linear Optics of Silicon and Silicon Nanostructures written by O. A. Aktsipetrov and published by CRC Press. This book was released on 2018-09-03 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theory and practice of the non-linear optics of silicon are inextricably linked with a variety of areas of solid state physics, particularly semiconductor physics. However, the current literature linking these fields is scattered across various sources and is lacking in depth. Second Order Non-linear Optics of Silicon and Silicon Nanostructures describes the physical properties of silicon as they apply to non-linear optics while also covering details of the physics of semiconductors. The book contains six chapters that focus on: The physical properties and linear optics of silicon Basic theoretical concepts of reflected second harmonics (RSH) The authors’ theory of the generation of RSH at the non-linear medium–linear medium interface An analytical review of work on the non-linear optics of silicon The results of non-linear optical studies of silicon nanostructures A theory of photoinduced electronic processes in semiconductors and their influence on RSH generation The book also includes methodological problems and a significant amount of reference data. It not only reflects the current state of research but also provides a single, thorough source of introductory information for those who are becoming familiar with non-linear optics. Second Order Non-linear Optics of Silicon and Silicon Nanostructures is a valuable contribution to the fields of non-linear optics, semiconductor physics, and microelectronics, as well as a useful resource for a wide range of readers, from undergraduates to researchers.

Download or read book Adhesion Measurement of Thin Films Thick Films and Bulk Coatings written by K. L. Mittal and published by ASTM International. This book was released on 1978 with total page 407 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Thin Films Five Volume Set written by Hari Singh Nalwa and published by Elsevier. This book was released on 2001-11-17 with total page 3451 pages. Available in PDF, EPUB and Kindle. Book excerpt: This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.

Download or read book The Surface Properties of Oxidized Silicon written by Else Kooi and published by Springer. This book was released on 2013-12-21 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microscopy Methods in Nanomaterials Characterization written by Sabu Thomas and published by Elsevier. This book was released on 2017-05-17 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microscopy Methods in Nanomaterials Characterization fills an important gap in the literature with a detailed look at microscopic and X-ray based characterization of nanomaterials. These microscopic techniques are used for the determination of surface morphology and the dispersion characteristics of nanomaterials. This book deals with the detailed discussion of these aspects, and will provide the reader with a fundamental understanding of morphological tools, such as instrumentation, sample preparation and different kinds of analyses, etc. In addition, it covers the latest developments and trends morphological characterization using a variety of microscopes. Materials scientists, materials engineers and scientists in related disciplines, including chemistry and physics, will find this to be a detailed, method-orientated guide to microscopy methods of nanocharacterization. Takes a method-orientated approach that includes case studies that illustrate how to carry out each characterization technique Discusses the advantages and disadvantages of each microscopy characterization technique, giving the reader greater understanding of conditions for different techniques Presents an in-depth discussion of each technique, allowing the reader to gain a detailed understanding of each

Download or read book The Physics and Chemistry of SiO2 and the Si SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.

Download or read book Ohmic Contacts to Semiconductors written by Electrochemical Society and published by . This book was released on 1969 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: