Download or read book Fabrication Technology for Microwave GaAs Field Effect Transistors written by Richard David Gurney and published by . This book was released on 1976 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microwave Field effect Transistors written by Raymond Sydney Pengelly and published by Wiley-Blackwell. This book was released on 1986 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Microwave Field effect Transistors written by Raymond S. Pengelly and published by John Wiley & Sons. This book was released on 1982 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaAs FET Principles and Technology written by James V. DiLorenzo and published by Artech House Publishers. This book was released on 1982 with total page 808 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book GaAs Microelectronics written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

Download or read book GaAs High Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.

Download or read book Modulation doped Field effect Transistors written by Heinrich Daembkes and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1991 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Pseudomorphic HEMT Technology and Applications written by R.L. Ross and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: PHEMT devices and their incorporation into advanced monolithic integrated circuits is the enabling technology for modern microwave/millimeter wave system applications. Although still in its infancy, PHEMT MIMIC technology is already finding applications in both military and commercial systems, including radar, communication and automotive technologies. The successful team in a globally competitive market is one in which the solid-state scientist, circuit designer, system engineer and technical manager are cognizant of those considerations and requirements that influence each other's function. This book provides the reader with a comprehensive review of PHEMT technology, including materials, fabrication and processing, device physics, CAD tools and modelling, monolithic integrated circuit technology and applications. Readers with a broad range of specialities in one or more of the areas of materials, processing, device physics, circuit design, system design and marketing will be introduced quickly to important basic concepts and techniques. The specialist who has specific PHEMT experience will benefit from the broad range of topics covered and the open discussion of practical issues. Finally, the publication offers an additional benefit, in that it presents a broad scope to both the researcher and manager, both of whom must be aware and educated to remain relevant in an ever-expanding technology base.

Download or read book The Fabrication and Evaluation of Microwave Field Effect Transistors written by Zachary J. Lemnios and published by . This book was released on 1979 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Introduction to Semiconductor Technology written by Cheng Wang and published by Wiley-Interscience. This book was released on 1990-02 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: Aimed at engineers and researchers in electronics and materials science, this volume provides coverage of practical design considerations and applications of gallium arsenide (GaAs) and related compounds, and presents both theoretical and practical approaches to the subject.

Download or read book Beam Technology for the Fabrication of Microwave Integrated Circuits written by Robert Seliger and published by . This book was released on 1974 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report discusses the progress made during the fourth phase of a multiyear program, January 1973 through March 1974, to demonstrate the feasibility of maskless doping by a focused programmable ion beam. A detailed discussion is given of further development of the experimental tiny ion beam system to include the ability to register ion beam patterns with existing structure on a structure on a surstrate. A registration accuracy of about one beam diameter, or 5 micrometers is reported. The size of the ion beam's scan field was measured and found to be about 0.5 mm x 0.5mm. Various possible applications of the tiny beam to microfabrication are studied. The microwave field effect transistor is chosen as an important example of how a focused ion beam can create a laterally varying doping profile (in the plane of a wafer). It is shown by analysis that by tailoring the channel doping along the width of the channel, the gain range of an FET can be extended from one to four orders of magnitude. The results are presented of the first GaAs FET that was tailored by a focused ion beam under computer control. The electrical characteristics of this tailored device are in good qualitative agreement with those predicted by the analysis.

Download or read book Electron Beam Technology in Microelectronic Fabrication written by George Brewer and published by Elsevier. This book was released on 2012-12-02 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron-Beam Technology in Microelectronic Fabrication presents a unified description of the technology of high resolution lithography. This book is organized into six chapters, each treating a major segment of the technology of high resolution lithography. The book examines topics such as the physics of interaction of the electrons with the polymer resist in which the patterns are drawn, the machines that generate and control the beam, and ways of applying electron-beam lithography in device fabrication and in the making of masks for photolithographic replication. Chapter 2 discusses fundamental processes by which patterns are created in resist masks. Chapter 3 describes electron-beam lithography machines, including some details of each of the major elements in the electron-optical column and their effect on the focused electron beam. Chapter 4 presents the use of electron-beam lithography to make discrete devices and integrated circuits. Chapter 5 looks at the techniques and economics of mask fabrication by the use of electron beams. Finally, Chapter 6 presents a comprehensive description and evaluation of the several high resolution replication processes currently under development. This book will be of great value to students and to engineers who want to learn the unique features of high resolution lithography so that they can apply it in research, development, or production of the next generation of microelectronic devices and circuits.

Download or read book Lumped Elements for RF and Microwave Circuits written by I. J. Bahl and published by Artech House. This book was released on 2003 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation Due to the unprecedented growth in wireless applications over the past decade, development of low-cost solutions for RF and microwave communication systems has become of great importance. This practical new book is the first comprehensive treatment of lumped elements, which are playing a critical role in the development of the circuits that make these cost-effective systems possible. The books offers you an in-depth understanding of the different types of RF and microwave circuit elements, including inductors, capacitors, resistors, transformers, via holes, airbridges, and crossovers.

Download or read book GaAs FET Device Fabrication and Ion Implantation Technology Microwave III V Compound Semiconductors written by Kenneth J. Sleger and published by . This book was released on 1979 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microwave Schottky barrier FETs and ion implantation have been selected to provide a bench mark technology for evaluation of III-V compound semiconductor materials grown at NRL and elsewhere. FETs used here employ a nominal one micron gate length and are processed by a combination of conventional contact photolithography and liftoff techniques. Ion implantation studies have centered about creating doping profiles suitable for active layers in GaAs and InP FETs using semi-insulation (SI) substrates. These substrates are previously qualified by capping with plasma deposited Si3N4 and annealing between 800 C and 850 C for 15-30 minutes (GaAs) or 700 C-750 C for 15 minutes (InP). Samples which show surface conversion after the anneal are rejected. NRL has demonstrated proficiency in being able to implant, cap and anneal both GaAs and InP SI substrates. GaAs FETs were fabricated on ion implanted NRL SI substrates (unintentionally doped) and on commercially supplied Cr doped SI GaAs with epitaxial channel regions. At 8 GHz the noise figure ranged from 3.4 dB - 3.8 dB with 6-8 dB associated gain for these devices. Differences in microwave performance between ion implanted and epitaxial FET was correlated to differences in mobility and and velocity profiles obtained from FAT FET test structures and actual microwave FET devices, respectively. Results suggest the need for improvement in FET process technology and capping technology. (Author).

Download or read book Fabrication Technology and Device Modeling for Gallium Arsenide Metal semiconductor Field effect Transistor written by Chunlin Liang and published by . This book was released on 1990 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Semiconductor Fabrication written by Dinesh C. Gupta and published by ASTM International. This book was released on 1989 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book RF and Microwave Semiconductor Device Handbook written by Mike Golio and published by CRC Press. This book was released on 2017-12-19 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.