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Book Fabrication  Performance and Degradation Mechanism of Aluminium  i e  Aluminum  Gallium Nitride gallium Nitride Heterostructure Field Effect Transistors

Download or read book Fabrication Performance and Degradation Mechanism of Aluminium i e Aluminum Gallium Nitride gallium Nitride Heterostructure Field Effect Transistors written by Hyungtak Kim and published by . This book was released on 2003 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Fabrication  Performance and Degradation Mechanism of Aluminum Gallium Nitride gallium Nitride Heterostructure Field effect Transistors

Download or read book Fabrication Performance and Degradation Mechanism of Aluminum Gallium Nitride gallium Nitride Heterostructure Field effect Transistors written by Hyungtak Kim and published by . This book was released on 2003 with total page 133 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous efforts to realize the potential of Al-GaN/GaN HFETs have been made over the last decade focusing on improving microwave power performance via optimizing material growth and semiconductor processing technologies. As the device performance is getting mature, the device's reliability becomes a major concern for manufacturability of commercially available AlGaN/GaN HFETs. However, comprehensive study on the reliability of these devices is still lacking.

Book Undoped Aluminum Gallium Nitride gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications

Download or read book Undoped Aluminum Gallium Nitride gallium Nitride Based Heterostructure High Electron Mobility Transistors for Microwave Applications written by Yunju Sun and published by . This book was released on 2006 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Design and Fabrication of Aluminum Gallium Nitride

Download or read book Design and Fabrication of Aluminum Gallium Nitride written by Kenneth Kanin Chu and published by . This book was released on 2000 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Charge Instability and Localization in Aluminum Gallium Nitride gallium Nitride Heterostructures and Heterostructure Field Effect Transistors Studied by Kelvin Probe Microscopy

Download or read book Charge Instability and Localization in Aluminum Gallium Nitride gallium Nitride Heterostructures and Heterostructure Field Effect Transistors Studied by Kelvin Probe Microscopy written by Goutam Koley and published by . This book was released on 2003 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Aluminum gallium nitride gallium nitride heterojunction field effect transistors grown by metalorganic chemical vapor deposition

Download or read book Aluminum gallium nitride gallium nitride heterojunction field effect transistors grown by metalorganic chemical vapor deposition written by Michael Ming Wong and published by . This book was released on 1999 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book A Study of Aluminum Gallium Nitride gallium Nitride Polarization Barriers  Aluminum Gallium Nitride silicon Carbide Heterojunction Bipolar Transistors and Polarization based Ohmic Contacts

Download or read book A Study of Aluminum Gallium Nitride gallium Nitride Polarization Barriers Aluminum Gallium Nitride silicon Carbide Heterojunction Bipolar Transistors and Polarization based Ohmic Contacts written by Choudhury Jayant Praharaj and published by . This book was released on 2004 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Electrical Performance and Physics of Ohmic Contact on Undoped Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistor

Download or read book Electrical Performance and Physics of Ohmic Contact on Undoped Aluminum Gallium Nitride gallium Nitride High Electron Mobility Transistor written by Yun-Ju Sun and published by . This book was released on 2004 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Design  Fabrication  and Performance of Aluminum Gallium Arsenide gallium Arsenide Modulation doped Field effect Transistors for High speed Applications

Download or read book Design Fabrication and Performance of Aluminum Gallium Arsenide gallium Arsenide Modulation doped Field effect Transistors for High speed Applications written by Allen Nicholas Lepore and published by . This book was released on 1988 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride Gallium Nitride Heterostructures

Download or read book The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride Gallium Nitride Heterostructures written by John W. McClory and published by . This book was released on 2008 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured. The results were compared to the charge control model of the drain current and trap-assisted tunneling model of the gate current to determine the source of the radiation-induced changes. AlGaN/GaN HFETs demonstrated threshold voltage shifts and drain current changes after irradiation. After electron and neutron irradiation applied at ~80 K, measurement of the drain current at this temperature showed an increase that saturated after 10^13 electrons/cm^2 or 10^10 neutrons/cm^2 due to positive charge build-up in the AlGaN layer. Measurement at room temperature after low-temperature irradiation showed a decrease in drain current due to the build up of charged defects along the AlGaN-GaN interface that decrease the mobility in the 2DEG and hence decrease the current. Gate leakage currents increased after low temperature irradiation and the increase was persistent after room temperature annealing. The increased leakage current was attributed to trap-assisted tunneling after application of the trap-assisted tunneling model. Comparison of the model to post-irradiation vs. pre-irradiation data showed that the dominant parameter change causing increased gate current was an increase in trap concentration.

Book ReliabilityStudy Of Power Gallium Nitride Transistors

Download or read book ReliabilityStudy Of Power Gallium Nitride Transistors written by and published by Marcon Denis. This book was released on with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt: