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Book Fabrication of Ultra small Gate Length Gallium Arsenide Field effect Transistors

Download or read book Fabrication of Ultra small Gate Length Gallium Arsenide Field effect Transistors written by Gregory Bazán and published by . This book was released on 1991 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Gallium Arsenide Field Effect Transistors with Semi Insulated Gates

Download or read book Gallium Arsenide Field Effect Transistors with Semi Insulated Gates written by D. W. Shaw and published by . This book was released on 1977 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report summarizes the results of a program for development and evaluation of gallium arsenide field effect transistors with semi-insulated gates (SIGFETs). These devices are potentially applicable to a number of microwave systems, including active-element phased-array radars and ECM jammers. Included in the scope of the program was an analysis of Class A and Class B FET amplifiers; design, fabrication, and dc and rf characterization of SIGFETs; evaluation of procedures for formation of n(+) contact regions for FETs; and an objective comparison of the properties of SIGFETs with those of conventional GaAs FETs. Theoretical analyses of the dc and rf operating characteristics of Class A and Class B FET amplifiers showed that maximum efficiency is expected for Class B operation into a tuned load. This conclusion was supported by the experimental observation that maximum efficiency was obtained for GaAs FETs when the gate bias approaches the pinch-off voltage, i.e., approaching Class B operation. Procedures were developed for fabrication of SIGFETs using either epitaxial growth or ion bombardment to form the region of high resistivity or semi-insulating GaAs to be located beneath the gate contact metal. SIGFETs fabricated by this procedure were compared with conventional FETs (without semi-insulated gates) fabricated from the same starting material. The SIGFETs have higher gate reverse breakdown voltages, lower transconductances, and approx. 1 dB lower small signal gains.

Book Vertical Gallium Nitride PowerDevices Fabrication and Characterisation

Download or read book Vertical Gallium Nitride PowerDevices Fabrication and Characterisation written by Rico Hentschel and published by BoD – Books on Demand. This book was released on 2021-01-03 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Efficient power conversion is essential to face the continuously increasing energy consumption of our society. GaN based vertical power field effect transistors provide excellent performance figures for power-conversion switches, due to their capability of handling high voltages and current densities with very low area consumption. This work focuses on a vertical trench gate metal oxide semiconductor field effect transistor (MOSFET) with conceptional advantages in a device fabrication preceded GaN epitaxy and enhancement mode characteristics. The functional layer stack comprises from the bottom an n+/n--drift/p-body/n+-source GaN layer sequence. Special attention is paid to the Mg doping of the p-GaN body layer, which is a complex topic by itself. Hydrogen passivation of magnesium plays an essential role, since only the active (hydrogen-free) Mg concentration determines the threshold voltage of the MOSFET and the blocking capability of the body diode. Fabrication specific challenges of the concept are related to the complex integration, formation of ohmic contacts to the functional layers, the specific implementation and processing scheme of the gate trench module and the lateral edge termination. The maximum electric field, which was achieved in the pn- junction of the body diode of the MOSFET is estimated to be around 2.1 MV/cm. From double-sweep transfer measurements with relatively small hysteresis, steep subthreshold slope and a threshold voltage of 3 - 4 V a reasonably good Al2O3/GaN interface quality is indicated. In the conductive state a channel mobility of around 80 - 100 cm2/Vs is estimated. This value is comparable to device with additional overgrowth of the channel. Further enhancement of the OFF-state and ON-state characteristics is expected for optimization of the device termination and the high-k/GaN interface of the vertical trench gate, respectively. From the obtained results and dependencies key figures of an area efficient and competitive device design with thick drift layer is extrapolated. Finally, an outlook is given and advancement possibilities as well as technological limits are discussed.

Book Gallium Arsenide Digital Circuits

Download or read book Gallium Arsenide Digital Circuits written by Omar Wing and published by Springer Science & Business Media. This book was released on 1990-10-31 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.

Book Design Fabrication and Performance of Aluminum Gallium Arsenide gallium Arsenide Modulation doped Field effect Transistors for High speed Applications

Download or read book Design Fabrication and Performance of Aluminum Gallium Arsenide gallium Arsenide Modulation doped Field effect Transistors for High speed Applications written by Allen Nicholas Lepore and published by . This book was released on 1988 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book The Design and Fabrication of Ion implanted Tungsten Silicide Gate Gallium Arsenide Metal Semiconductor Field Effect Transistor

Download or read book The Design and Fabrication of Ion implanted Tungsten Silicide Gate Gallium Arsenide Metal Semiconductor Field Effect Transistor written by Cho Woo Moon and published by . This book was released on 1988 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Gallium Arsenide Metal Semiconductor Field Effect Transistor Fabrication Based Upon the Processing of an Individual Die

Download or read book Gallium Arsenide Metal Semiconductor Field Effect Transistor Fabrication Based Upon the Processing of an Individual Die written by Lynn Fenton Fuller and published by . This book was released on 1979 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Gallium Arsenide

Download or read book Gallium Arsenide written by M. J. Howes and published by . This book was released on 1985 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the seventh volume in the Wiley Series in Solid State Devices and Circuits, and deals comprehensively with the use of gallium arsenide for high frequency and high speed circuits.

Book The Gallium Arsenide Metal Semiconductor Field Effect Transistor MESFET

Download or read book The Gallium Arsenide Metal Semiconductor Field Effect Transistor MESFET written by G. Rogers and published by . This book was released on 1981 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: