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Book Fabrication of GaN Based Light Emitting Diodes LEDs with Specific Structures

Download or read book Fabrication of GaN Based Light Emitting Diodes LEDs with Specific Structures written by 李侑霖 and published by . This book was released on 2018 with total page 99 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book III Nitride Based Light Emitting Diodes and Applications

Download or read book III Nitride Based Light Emitting Diodes and Applications written by Tae-Yeon Seong and published by Springer. This book was released on 2017-05-18 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: The revised edition of this important book presents updated and expanded coverage of light emitting diodes (LEDs) based on heteroepitaxial GaN on Si substrates, and includes new chapters on tunnel junction LEDs, green/yellow LEDs, and ultraviolet LEDs. Over the last two decades, significant progress has been made in the growth, doping and processing technologies of III-nitride based semiconductors, leading to considerable expectations for nitride semiconductors across a wide range of applications. LEDs are already used in traffic signals, signage lighting, and automotive applications, with the ultimate goal of the global replacement of traditional incandescent and fluorescent lamps, thus reducing energy consumption and cutting down on carbon-dioxide emission. However, some critical issues must be addressed to allow the further improvements required for the large-scale realization of solid-state lighting, and this book aims to provide the readers with details of some contemporary issues on which the performance of LEDs is seriously dependent. Most importantly, it describes why there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and In-rich GaN-based semiconductors. The quality of materials is directly dependent on the substrates used, such as sapphire and Si, and the book discusses these as well as topics such as efficiency droop, growth in different orientations, polarization, and chip processing and packaging technologies. Offering an overview of the state of the art in III-Nitride LED science and technology, the book will be a core reference for researchers and engineers involved with the developments of solid state lighting, and required reading for students entering the field.

Book Fabrication of GaN Based Light Emitting Diodes

Download or read book Fabrication of GaN Based Light Emitting Diodes written by 劉亦浚 and published by . This book was released on 2008 with total page 87 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Fabrication and Characterization of GaN based Light Emitting Diodes

Download or read book Fabrication and Characterization of GaN based Light Emitting Diodes written by Ka-kuen Leung and published by . This book was released on 2010 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Design and Fabrication of GaN UV Light Emitting Diodes Grown on Silicon Nanostructures

Download or read book Design and Fabrication of GaN UV Light Emitting Diodes Grown on Silicon Nanostructures written by Richard J. Brown and published by . This book was released on 2005 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Study and Fabrication of GaN based Micro Light Emitting Diodes

Download or read book Study and Fabrication of GaN based Micro Light Emitting Diodes written by 陳建儒 and published by . This book was released on 2020 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Design and Fabrication of High Efficiency GaN Based Light Emitting Diodes

Download or read book Design and Fabrication of High Efficiency GaN Based Light Emitting Diodes written by 汪楷茗 and published by . This book was released on 2006 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Studies of Gallium Nitride Based Schottky Barrier Diodes and Light Emitting Diodes

Download or read book Studies of Gallium Nitride Based Schottky Barrier Diodes and Light Emitting Diodes written by Chen Mo and published by . This book was released on 2022 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The surface roughness and nitrogen deficiencies caused by inductively coupling plasma etching have been major problems in manufacturing GaN based electronic and photonic devices. The surface of Gallium Nitride needs recovery treatment after plasma etching. In my research of Schottky Barrier Diodes, the above-mentioned problems were addressed by developing a novel KOH-etching approach to remove the surface residues. Based on the analysis of current density to voltage curve, KOH solution treatment helps to remove the etch-damaged layer and flattening the surface morphology. The sample with KOH solution has lower surface density, shorter defect region thickness and higher barrier, and all of which will reduce the leakage current with several orders of magnitude. In my research of GaN based Micro LEDs, the sidewall of the mesa is protected by a layer of SiO2 with atomic layer deposition (ALD) after ICP etching. We analyzed that the passivation layer helps to deactivate surface traps and reduce leakage current in forward bias. According to the simulation results and the light-current-voltage measurements, the sidewall passivation layer grown by atomic layer deposition reduces the Schottky Reed Hall non-radiative recombination rate, thereby increasing the external quantum efficiency. From the experimental results, the improvement of the pixel's quantum efficiency at 150K is significantly higher than that at 300K. Shockley-Read-Hall nonradiative recombination rate decreases rapidly at low temperature due to longer carrier lifetime and increased difficulty of electron and hole recombination in traps. From the modeling results, the circular shaped pixels have better performance than square shaped pixels due to the following reasons: (1) the sharp corners have more surface roughness and defects during fabrication (2) the circular shaped pixel has better current spreading.

Book Fabrication and Analysis of GaN Based High Speed Blue Light Emitting Diodes

Download or read book Fabrication and Analysis of GaN Based High Speed Blue Light Emitting Diodes written by 蕭佳晏 and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book GaN based Materials and Devices

Download or read book GaN based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.