Download or read book Fabrication Measurement and Simulation of Silicon germanium carbon Heterostructure Devices written by Ramakrishna Shivaram and published by . This book was released on 2000 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Simulation and Measurement of Silicon germanium carbon Heterostructure Devices written by Sankaran Jayanarayanan and published by . This book was released on 1997 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Germanium Carbon Alloys written by S. Pantellides and published by CRC Press. This book was released on 2002-07-26 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials
Download or read book Germanium silicon Strained Layers and Heterostructures written by Suresh C. Jain and published by . This book was released on 1994 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.
Download or read book Fabrication and Analysis of Silicon Homojunction and Silicon silicon germanium Heterojunction Minority Carrier Devices Produced by Limited Reaction Processing written by Clifford A. King and published by . This book was released on 1989 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Structures and Rectifiers Based on Silicon Carbide Alloyed with Germanium written by Gary L. Katulka and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: SiC possesses highly unique and interesting properties. The large bandgap and extremely high thermal conductivity make it an excellent material candidate for high voltage and high power electronics which can be exploited for both commercial and military applications. The chemical inertness of SiC is advantageous for applications requiring tolerance to harsh environments and very high temperatures, owing mainly to the strong Si-C sp3 bond. While fabricating ohmic contacts for SiC is very challenging due to large surface barrier heights, once formed the contacts are thermally stable to extremely high temperatures. We have shown in our experiments that specialized ohmic contacts on 4H-SiC are stable and exhibit resistivity changes of at most 3.8% for contacts exposed to the temperature range of 600-1120°C and current densities of 2.5 kA/cm 2 . Reported for the first time by our group in 1999 at the University of Delaware, heterostructure devices with newly developed SiC:Ge alloys were extensively investigated. Rutherford Backscattering Spectrometry (RBS) and X-ray diffraction (XRD) measurements demonstrated thermal stability of the material up to 1000°C and implied an increase in the lattice constant. Although the only practical method for impurity doping, due to the very low diffusivity in SiC, is with ion implantation we experimentally measured the diffusivity of Ge in SiC in the range of 1.05 x 10 -15 cm 2 /s to 1.45 x 10 -15 cm 2 /s. This is considered valuable new information for purposes of precise device processing, considering the implant and contact anneal temperatures for SiC are in excess of 1000°C. SiC/SiC:Ge rectifiers were fabricated and analyzed in collaboration with Northrop Grumman, Baltimore, MD. Our experimental measurements from the rectifiers revealed the forward current was higher by as much as 0.5 mA for SiC/SiC:Ge devices compared to devices without Ge, and built-in voltages were consistently lower by between 100-42 mV. Contact resistance studies showed that SiC:Ge rectifiers had a greatly reduced contact resistance and specific contact resistivity compared to un-implanted SiC devices, for both n and p conductivity types. The Ge in n-SiC reduced the contact resistance and the specific contact resistivity by a factor of 5.6 and 8.8, respectively. In p-SiC, the Ge had an even more pronounced effect, reducing the contact resistance by a factor of 18.6 and lowering the specific contact resistivity by a factor of 14.5. Finally our 2MeV He+ RBS channeling studies suggested that a significant portion of the Ge in SiC:Ge implanted substrates was physically located on Si substitutional lattice sites within the host 4H-SiC crystal. This was true for samples containing between 0.6% and 1.25% Ge, and numerous channeling angles were utilized in the study with support from the Ion Beam Lab at the University of Michigan, Ann Arbor, MI. These results are considered highly important experimental findings which corroborate our earlier work and further promote SiC:Ge as a viable semiconductor material for high-power, high-temperature heterostructures with 4H-SiC.
Download or read book The Fabrication and Characterization of Ion implanted Germanium incorporated Silicon carbide Diodes and Transistors written by Matthias Lang and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique material properties of Silicon-Carbide (SiC) make it a superior choice over Silicon or Gallium-Arsenide for applications in power electronics. Unfortunately, SiC semiconductor technology was only developed in recent years and its processes are still immature. Additionally, proper lattice matched compatible elements and alloy materials are rare, which gives other wide-bandgap materials, such as Gallium-Nitride, dominance. Furthermore, the well-established standard CMOS processes can not be applied to SiC in all cases. Finding proper complementary elements and alloys could bring SiC into competition with other wide-bandgap materials again. This thesis describes the incorporation of Germanium (Ge) in SiC as a way of bandgap engineering. Alloying with Germanium is believed to lower the bandgap of SiC, therefore using it to create heterojunction devices. I will introduce Ge-alloyed SiC heterojunction diodes, transistors and Schottky-barrier diodes, and address its advantages over their isomaterial devices. The design of the above mentioned devices will be reported, as well as all fabrication steps. Finally, a thorough analysis and evaluation will be concluded based on device measurements.
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2001 with total page 830 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Silicon Germanium Heterojunction Bipolar Transistors for mm Wave Systems Technology Modeling and Circuit Applications written by Niccolò Rinaldi and published by River Publishers. This book was released on 2018-03-15 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becoming an ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000's. Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration. Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Download or read book Index to Theses with Abstracts Accepted for Higher Degrees by the Universities of Great Britain and Ireland and the Council for National Academic Awards written by and published by . This book was released on 2008 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt: Theses on any subject submitted by the academic libraries in the UK and Ireland.
Download or read book Properties of Silicon Germanium and SiGe Carbon written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 2000 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
