Download or read book Fabrication and Optical Characterization of Silicon Nanowires written by Martin Gotza and published by . This book was released on 1997 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of Silicon Nanowires written by Vikram Passi and published by LAP Lambert Academic Publishing. This book was released on 2012-07 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt: When dimensions of material approach nanoscale, they often reveal startling properties. These unique properties when compared to bulk material make them interesting candidates for new technologies. In a race to sustain Moore's Law, silicon nanowires which possess remarkable properties diverse from bulk-silicon have gained notable attention. With advancement in technology engineers have mastered the art of fabrication of nanowires, but there exists a big gap in understanding various phenomena at this scale. The aim of this work is to bridge the gap and give an insight into some interesting properties and application of silicon nanowires. Using top-down lithography Silicon nanowires are fabricated and various mechanical and electrical properties are studied. The use of functionalized silicon nanowires for gas detection is demonstrated with very large sensitivity and detection window reported for the first time.

Download or read book Silicon Carbide Nanostructures written by Jiyang Fan and published by Springer. This book was released on 2014-07-26 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together the most up-to-date information on the fabrication techniques, properties, and potential applications of low dimensional silicon carbide (SiC) nanostructures such as nanocrystallites, nanowires, nanotubes, and nanostructured films. It also summarizes the tremendous achievements acquired during the past three decades involving structural, electronic, and optical properties of bulk silicon carbide crystals. SiC nanostructures exhibit a range of fascinating and industrially important properties, such as diverse polytypes, stability of interband and defect-related green to blue luminescence, inertness to chemical surroundings, and good biocompatibility. These properties have generated an increasing interest in the materials, which have great potential in a variety of applications across the fields of nanoelectronics, optoelectronics, electron field emission, sensing, quantum information, energy conversion and storage, biomedical engineering, and medicine. SiC is also a most promising substitute for silicon in high power, high temperature, and high frequency microelectronic devices. Recent breakthrough pertaining to the synthesis of ultra-high quality SiC single-crystals will bring the materials closer to real applications. Silicon Carbide Nanostructures: Fabrication, Structure, and Properties provides a unique reference book for researchers and graduate students in this emerging field. It is intended for materials scientists, physicists, chemists, and engineers in microelectronics, optoelectronics, and biomedical engineering.

Download or read book Fabrication and Characterization of Photodiodes for Silicon Nanowire Applications and Backside Illumination written by Ying Xu and published by . This book was released on 2015 with total page 89 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although silicon photodetectors are widely used in the manufacture of consumer cameras and light sensors, their fabrication requires a large number of process steps, equipment and resources. In order to study novel device concepts, such as the inclusion of silicon nanowires, quantum-confinement, nanostructured moth-eye structures or on-chip optical filtering, we need control over critical fabrication steps, which is not possible if we rely only on commercially produced devices. In this work, we have designed, fabricated and characterized silicon photodiodes starting from bare silicon wafers to completely packaged chips. We considered two major configurations--front-side illuminated detectors on standard SSP silicon wafers, and back-side illuminated detectors with ultrathin DSP silicon wafers. Ion implantation process was used for creating the p-n junctions, but we also acquired a diffusion furnace and developed our own process for thermal diffusion from a solid source. We also fabricated silicon nanowires on the front side of the diodes using a gold metal-assisted chemical etching (MACE) process to examine their effects on the optical and electrical performances of the devices. The fabricated devices were tested on a probe station, and then they were packaged, wire-bonded and tested for optical responsivities and quantum efficiencies.

Download or read book Synthesis Characterization and Integration of Silicon Nanowires for Nanosystems Technology written by Gregory Stephen Doerk and published by . This book was released on 2010 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon's chemical stability, high natural abundance (as the second most common element in the earth's crust), mechanical stiffness, and semiconducting behavior have made it the subject of extensive scientific investigation and the material of choice for both the microelectronics and microelectromechanical device industries. The success of Moore's Law that demands continual size reduction has directed it to a central place in emerging nanoscience and nanotechnology as well. Crystalline nanowires (NWs) are one nanostructured form that silicon may take that has sparked significant interest as they can exhibit considerable confinement effects and high surface-to-volume ratios, but may be interfaced simply along one direction for the determination of material properties and implementation into new technologies. The expense and difficulty involved in the creation of semiconductor nanowires using the "top down" fabrication techniques of the microelectronics industry has promoted an explosion of chemical synthetic "bottom up" techniques to produce high quality crystalline nanowires in large quanitities. Nevertheless, bottom up synthesized Si NWs retain a new set of challenges for their successful integration into reliable, high-performance devices, which is hindered by an incomplete understanding of the factors controlling their material properties. The first chapter of this dissertation introduces the motivation for studying semiconductor NWs and the benefits of limiting the scope to silicon alone. A brief survey of the current understanding of thermal conductivity in silicon nanowires provides prime examples of how confinement effects and surface morphology may dramatically alter nanowire properties from their bulk crystal counterparts. The particular challenges to bottom up silicon nanowire device integration and characterization are noted, especially related to Si nanowires that are grown epitaxially on crystal silicon substrates, and Raman spectroscopy is introduced as a promising optical characterization and metrology tool for semiconductor nanowire based devices. Chapter two describes the vapor-liquid-solid (VLS) mechanism for the synthesis of very high quality, single-crystal silicon nanowires using Au and Pt catalyst nanoparticles. A new technique is presented for the simplified synthesis of branched silicon nanowires based on the migration of Au catalyst during an hydrogen anneal intermediate between growth stages, and the faceting behavior at synthetic stages is revealed by the analysis of electron microscope images. Synthesis of solid and porous Si nanowires based on Ag mediated electrochemical silicon etching is described as well. The third chapter specifies new processing techniques developed with future device integration of epitaxially VLS-grown Si nanowires in mind. Epitaxially bridging nanowires are shown to provide an excellent platform for single-wire electrical and mechanical property measurements. Galvanic displacement through block copolymer micelle/homopolymer surface templates is demonstrated as a means to deposit catalyst nanoparticles with controlled sizes and areal densities in a variety of geometries and with registration to photolithographic patterns. Ex situ boron doping by the direct hydrogen reduction of boron tribromide is shown to achieve active concentrations exceeding 1019 cm-3 with high axial uniformity, while avoiding the adverse impact on nanowire morphology that is often observed with in situ boron doping of silicon nanowires. Chapter four describes the characteristics of Raman spectroscopy that are relevant to studying individual semiconductor nanowires. Careful spectral measurements show that the anharmonic dependence of Raman spectra on temperature for individual Si nanowires remains unchanged from the bulk crystal for diameters down to 30 nm, regardless of surface morphology. Using this result, a new technique for measuring the thermal conductivity of individual semiconductor nanowires is then outlined based on Raman thermal mapping of individual cantilevered nanowires. Finally, the dissertation is concluded with suggestions for possible future experiments. One avenue is to probe more deeply the morphology of faceted silicon nanowires and nanotrees and its impact on their transport physics. Another possible route for further study would be to explore new characterization and metrological applications of Raman spectrocopy for semiconductor nanowires.

Download or read book Synthesis Electrical and Optical Characterization of Semiconductor Nanowires written by Xianwei Zhao and published by . This book was released on 2010 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Over the past 15 years, nanowires (NWs) and nanotubes have drawn great attention since the application of VLS growth mechanism into the synthesis of one dimensional structures. Semiconductor nanowires exhibit novel electrical and optical properties. With a broad selection of composition and band structures, these one-dimensional semiconductor nanostructures are considered to be the critical components in a wide range of potential nanoscale device applications. To fully exploit these one-dimensional nanostructures, current research has focused on synthetic control of one-dimensional nanoscale building blocks, characterization of their novel properties, device fabrication based on nanowire building blocks, and integration of nanowire elements into complex functional architectures. Progress has been made in past two decades. However, there are still challenges in NWs growth controls, such as size, shape, position, stoichiometry and defects. Due to the dimensionality and possible quantum confinement effects of nanowires, there are also challenges in characterization and device fabrication. A systematic study of controlled growth of nanowires has been conducted in this dissertation. The first part of this dissertation presents various synthesis techniques of semiconductor nanowires via metal catalyzed vapor-liquid-solid (VLS) growth mechanism. Pulse laser deposition (PLD) with arsenic over pressure method has been successfully utilized for GaAs nanowires. Challenges such as uniformity issue commonly seen in MOCVD and MBE systems, morphology and stoichiometry issues commonly seen in conventional PLD systems have been overcome. Si nanowires fabrication via ultrahigh vacuum magnetron sputtering has reported for the first time, which also provides an alternate route for Si nanowires synthesis. The second part of this dissertation discusses optical properties of ensemble direct band gap nanowires. Photoluminescence spectra have been measured on an ensemble of random orientated InP nanowires. Polarization anisotropy has been explored on ensemble nanowires and oxide-coated nanowires. Our calculation for randomly oriented nanowires agrees well with experimental results. The control of polarization anisotropy of nanowires is realized by coating nanowires with an oxide layer composed of matching dielectric constant media. This opens a path to optical spin injection and detection on direct band gap nanowires.

Download or read book Fabrication and Characterization of Silicon Nanowires and Metal Nanostructures written by Vicki Wai-Shum Lui and published by . This book was released on 2005 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon and Silicide Nanowires written by Yu Huang and published by CRC Press. This book was released on 2016-04-19 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering

Download or read book Semiconducting Silicon Nanowires for Biomedical Applications written by Jeffery L. Coffer and published by Woodhead Publishing. This book was released on 2021-09-14 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: In its second, extensively revised second edition, Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and biomedical applications of this key material. The book begins by reviewing the basics of growth, characterization, biocompatibility, and surface modification of semiconducting silicon nanowires. Attention then turns to use of these structures for tissue engineering and delivery applications, followed by detection and sensing. Reflecting the evolution of this multidisciplinary subject, several new key topics are highlighted, including our understanding of the cell-nanowire interface, latest advances in associated morphologies (including silicon nanoneedles and nanotubes for therapeutic delivery), and significantly, the status of silicon nanowire commercialization in biotechnology. Semiconducting Silicon Nanowires for Biomedical Applications is a comprehensive resource for biomaterials scientists who are focused on biosensors, drug delivery, and the next generation of nano-biotech platforms that require a detailed understanding of the cell-nanowire interface, along with researchers and developers in industry and academia who are concerned with nanoscale biomaterials, in particular electronically-responsive structures. - Reviews the growth, characterization, biocompatibility, and surface modification of semiconducting silicon nanowires - Describes silicon nanowires for tissue engineering and delivery applications, including cellular binding & internalization, tissue engineering scaffolds, mediated differentiation of stem cells, and silicon nanoneedles & nanotubes for delivery of small molecule / biologic-based therapeutics - Highlights the use of silicon nanowires for detection and sensing - Presents a detailed description of our current understanding of the cell-nanowire interface - Covers the current status of commercial development of silicon nanowire-based platforms

Download or read book Semiconductor Nanowires written by Wei Xu and published by . This book was released on 2008 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of Silicon Nanowires and Metal Nanostructures microform written by Lui, Vicki Wai-Shum and published by Library and Archives Canada = Bibliothèque et Archives Canada. This book was released on 2005 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication of Vertical Silicon Nanowires Through Metal Assisted Deposition written by Matthew Garett Young and published by . This book was released on 2012 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: Controlled and ordered growth of Si nanowires through a low temperature fabrication method compatible with CMOS processing lines is a highly desirable replacement to future electronic fabrication technologies as well as a candidate for a low cost route to inexpensive photovoltaics. This stems from the fact that traditional CMOS based electronics are hitting physical barriers that are slowing the Moore's Law trend as well as the demand for an inexpensive solar cell technology that can obtain grid parity. A fractional factorial growth study is presented that compares the growth of Au and Al catalyzed Si nanowires at temperatures ranging from 150 to 400° C. Dense and prolific growth of Si nanowires on 111 and 100 Si substrates as well as glass substrates was obtained using a Au catalyst at temperatures of 400° C. An overview is given that considers all growth experiments and includes TEM analysis of individual Si nanowires grown on Si substrates showing nanowires to be both crystalline and amorphous in nature. Optical transmission data of bulk Si nanowire films on glass substrates showed that the collective optical properties were highly desirable as transmission was minimized over the 300 to 1400 nm wavelength range at different transmission angles. Collectively, a growth platform is presented from which further material study will yield advanced Si nanowire based devices, satisfying a demand by the ITRS and the scientific community at large for electronics that can continue the Moore's law trend and inexpensive photovoltaics capable of meeting the consumer demand for grid parity.

Download or read book Fabrication and Electrical Characterization of Silicon Nanowire Arrays written by Sarah M. Dilts and published by . This book was released on 2004 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic and Optical Properties of Silicon Nanowires written by Daryoush Shiri and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of Vertical Silicon Nanowire Arrays written by Jeffrey M. Weisse and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermoelectric devices, which convert temperature gradients into electricity, have the potential to harness waste heat to improve overall energy efficiency. However, current thermoelectric devices are not cost-effective for most applications due to their low efficiencies and high material costs. To improve the overall conversion efficiency, thermoelectric materials should possess material properties that closely resemble a "phonon glass" and an "electron crystal". The desired low thermal and high electrical conductivities allow the thermoelectric device to maintain a high temperature gradient while effectively transporting current. Unfortunately, thermal transport and electrical transport are a closely coupled phenomena and it is difficult to independently engineer each specific conduction mechanism in conventional materials. One strategy to realize this is to generate nanostructured silicon (e.g. silicon nanowires (SiNWs)), which have been shown to reduce thermal conductivity ([kappa]) through enhanced phonon scattering while theoretically preserving the electronic properties; therefore, improving the overall device efficiency. The ability to suppress phonon propagation in nanostructured silicon, which has a bulk phonon mean free path ~ 300 nm at 300 K, has raised substantial interest as an ultra-low [kappa] material capable of reducing the thermal conductivity up to three orders of magnitude lower than that of bulk silicon. While the formation of porous silicon and SiNWs has individually been demonstrated as promising methods to reduce [kappa], there is a lack of research investigating the thermal conductivity in SiNWs containing porosity. We fabricated SiNW arrays using top-down etching methods (deep reactive ion etching and metal-assisted chemical etching) and by tuning the diameter with different patterning methods and tuning the internal porosity with different SiNW etching conditions. The effects of both the porosity and the SiNW dimensions at the array scale are investigated by measuring [kappa] of vertical SiNW arrays using a nanosecond time-domain thermoreflectance technique. In addition to thermoelectric devices, vertical SiNW arrays, due to their anisotropic electronic and optical properties, large surface to volume ratios, resistance to Li-ion pulverization, ability to orthogonalize light absorption and carrier transport directions, and trap light, make vertical SiNW arrays important building blocks for various applications. These may include sensors, solar cells, and Li-ion batteries. Many of these applications benefit from vertical SiNW arrays fabricated on non-silicon based substrates which endow the final devices with the properties of flexibility, transparency, and light-weight while removing any performance limitation of the silicon fabrication substrate. We then developed two vertical transfer printing methods (V-TPMs) that are used to detach SiNW arrays from their original fabrication substrates and subsequently attach them to any desired substrate while retaining their vertical alignment over a large area. The transfer of vertically aligned arrays of uniform length SiNWs is desirable to remove the electrical, thermal, optical, and structural impact from the fabrication substrate and also to enable the integration of vertical SiNWs directly into flexible and conductive substrates. Moreover, realization of a thermoelectric device requires the formation of electrical contacts on both sides of the SiNW arrays. We formed metallic contacts on both ends of the SiNW arrays with a mechanical supporting and electrical insulating polymer in between. Electrical characterization of the SiNW devices exhibited good current-voltage (I-V) characteristics independent of substrates materials and bending conditions. We believe the V-TPMs developed in this work have great potential for manufacturing practical thermoelectric devices as well as high performing, scalable SiNW array devices on flexible and conducting substrates.

Download or read book Semiconductor Nanowires written by J Arbiol and published by Elsevier. This book was released on 2015-03-31 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields

Download or read book Silicon Nanomaterials Sourcebook written by Klaus D. Sattler and published by CRC Press. This book was released on 2017-07-28 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive tutorial guide to silicon nanomaterials spans from fundamental properties, growth mechanisms, and processing of nanosilicon to electronic device, energy conversion and storage, biomedical, and environmental applications. It also presents core knowledge with basic mathematical equations, tables, and graphs in order to provide the reader with the tools necessary to understand the latest technology developments. From low-dimensional structures, quantum dots, and nanowires to hybrid materials, arrays, networks, and biomedical applications, this Sourcebook is a complete resource for anyone working with this materials: Covers fundamental concepts, properties, methods, and practical applications. Focuses on one important type of silicon nanomaterial in every chapter. Discusses formation, properties, and applications for each material. Written in a tutorial style with basic equations and fundamentals included in an extended introduction. Highlights materials that show exceptional properties as well as strong prospects for future applications. Klaus D. Sattler is professor physics at the University of Hawaii, Honolulu, having earned his PhD at the Swiss Federal Institute of Technology (ETH) in Zurich. He was honored with the Walter Schottky Prize from the German Physical Society, and is the editor of the sister work also published by Taylor & Francis, Carbon Nanomaterials Sourcebook, as well as the acclaimed multi-volume Handbook of Nanophysics.