Download or read book Fabrication and Electrical optical Characterization of Bulk GaN based Schottky Diodes written by and published by . This book was released on 2009 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Characterization of GaN and SiC Schottky Diodes and Non Mechanical Beam Steering Using Liquid Crystals written by Kandhar Kurhade and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis we investigated the electrical characteristics of GaN schottky diodes fabricated on a commercial LED wafer using Inductively Coupled Plasma Reactive Ion etching (ICP-RIE) techniques. We also researched the characteristics of commercially available SiC schottky diodes. Two main electrical characterization techniques were used in the investigation of these diodes, Current - Voltage Characterization and Capacitance - Voltage Characterization. Using I-V characteristics the ideality and the Barrier height of the Schottky diode was determined and the C-V characteristics were used to calculate the doping concentration of the device. These measurements were done at room temperature as well as different temperatures ranging from 100K to 300K for GaN diodes and 133K to 433K for SiC diodes to observe the dependence of Barrier height and the Ideality factor on the temperature. It was concluded that for GaN the ideality factor decreases with the increase in temperature while the barrier height increases with increase in temperature. The values of barrier height for GaN at 120K is 0.44eV and at 300K it is 0.81eV and the ideality factor at 120K is 0.96 and at 300K it is 0.6. The carrier concentration of the SiC remains constant through the three regions while the carrier concentration of GaN device increases as the reverse bias increases. GaN diode was also measured at two different frequencies to observe if there is any change in the C-V profile and the profile was similar for the two frequencies.Further this thesis comprises of a small novel device which is in the process of fabrication. It is a non-mechanical beam steerer which makes use of Liquid crystals to deviate a beam from its normal position. This thesis only includes the architecture used in the manufacturing of the device and the fabrication of a liquid crystal cell.
Download or read book Process Development for GaN Schottky Diodes written by Michael Thomas and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-performance Schottky contact metallizations on gallium nitride (GaN) are needed for high-power and/or high-temperature diodes. Device fabrication methods can have a significant effect on the performance of devices owing to defects introduced by processing, which can create states in the bandgap. Deep level optical spectroscopy (DLOS) is an important technique for characterizing the relative densities and energy levels of these defects. In order to use it, light must be able to penetrate into the active area of the device. This requirement necessitates changing an existing fabrication procedure while ensuring that the device performance is unchanged. Designing, implementing, and testing a DLOS-compatible GaN Schottky diode fabrication method was the goal of this thesis. This investigation demonstrates that DLOS-compatible rhenium Schottky diodes to GaN can be made with comparable performance to existing devices. Ideal rectifying characteristics were achieved. From current-voltage characterization of diodes immediately after fabrication, an average Schottky barrier height of 0.786 eV with a standard deviation of 0.050 eV was measured. Those same diodes had an average ideality factor of 1.02 with a standard deviation of
Download or read book Electro optical Characterization and Analysis of Schottky Diodes Based on Nano crystalline CdS written by Sri Kalyan C. Sanagapalli and published by . This book was released on 2004 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Electrical Characterization in Quasi Vertical GaN Trench Schottky Barrier Diode written by and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Analysis of GaN based Nanorod Light Emitting Diodes written by 王振印 and published by . This book was released on 2008 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Un an de th tre written by Yves-Bonnat and published by . This book was released on 1942 with total page 63 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Download or read book Fabrication and Characterization of Zinc Oxide Light emitting Diodes Indium Zinc Oxide Thin film Transistors and AlGaN GaN High Electron Mobility Transistor based Biosensors written by Yu-Lin Wang and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: Hydrogen effects on the electrical and optical properties of p-i-n ZnO light emitting diodes (LEDs) were investigated. There were no diode characteristics or light emission observed from p-i-n ZnO LEDs unless the LEDs were annealed at 350 °C after fabrication. Annealed diodes showed band-edge electroluminescence at 385nm and a broad defect band with a peak at 930nm at room temperature. The effects of hydrogen plasma, moisture, water, and phosphoric acid solution on the annealed diode characteristics were investigated and significant degradation of electrical and optical properties were observed in all cases. The plasma-enhanced chemical vapor-deposited (PECVD) SiO2 and SiN[subscript x] passivation effects on p-i-n ZnO LEDs were also investigated.
Download or read book Growth and Characterization of Single Crystalline InN Grown on GaN by RF Sputtering for Schottky Contacts written by Vache Harotoonian and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Heterojunction-based Schottky barrier diodes were demonstrated in this study using n+InN/nGaN as an alternative to metal-semiconductor Schottky barriers. High quality, single crystal wurtzite InN films were fabricated by radio-frequency (RF) magnetron reactive sputtering on both GaN-on-sapphire and bulk-GaN substrates. Atomic force microscopy (AFM) analysis revealed the sputtered InN film has root-mean-square (RMS) surface roughness of about 0.4 nm, which was comparable to the underlying GaN substrate. X-ray diffraction (XRD) measurements revealed (0001) preferred growth orientation and a relaxed film with lattice parameters of 3.5593 Å and 5.6984 Å for a and c, respectively, which were similar to previously measured strain-free lattice constants using InN powder analysis. The dielectric function of the sputtered film was modeled using spectroscopic ellipsometry (SE) measurements and subsequently the optical parameters (n, k, ̧[alpha], [epsilon]∞) of the film were obtained. An optical band gap of 1.5 eV was measured using both optical transmission and SE measurements. By applying the Drude model to the IR-portion of the SE data, free-carrier absorption in the deposited film was examined and in conjunction with transport measurements, effective electron mass of 0.23m0 was obtained for the deposited InN films in this study. The measured effective mass was validated by modeling k-dependent electron effective mass using non-parabolic conduction band dispersion. Room-temperature Hall Effect measurements showed mobility of 113 cm2/V.s and electron concentration of 2-3x1020/cm3. The feasibility of utilizing a cost effective and productive method of sputtering to form heterostructure-based Schottky contacts to GaN using InN, an immiscible and metallic-like semiconductor, was explored by fabricating both planar and vertical n+InN/nGaN isotype heterojunction-based diodes. The electrical measurements of diode structures showed rectifying behavior at the isotype junction of sputtered InN on n-GaN, with a low-barrier of 0.22 - 0.27 eV obtained from I-V and C-V measurements. A turn on voltage of 0.43 V, specific-on-resistance (R[subscript on]A) of 0.48m[omega]-cm2, breakdown voltage of 79 V, and a leakage current of 5 [mu]A (at -2 V) was measured on the diodes without passivation and guard rings. The Baliga's figure-of-merit (BFOM) was measured to be 13 MW/cm2. A current density of 1 kA/cm2 at 0.9 V was measured for devices with Schottky electrodes of 75 [mu]m in diameter. The capacitance versus frequency measurements showed the existence of a large number of traps at or near the interface of n+InN/nGaN. These preliminary results suggest that a low cost, widely adapted, and straightforward process of reactive sputtering can be used to attain Schottky contacts to GaN using InN, a metallic-like semiconductor.
Download or read book GaN based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Download or read book Schottky Barrier Diode Fabrication on N GaN for Altraviolet Detection written by Mmantsae Moche Diale and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: There are many potential areas for the utilization of GaN-based nitride materials, including ultraviolet photodetectors. Ultraviolet photodetectors are used in the military for missile plume detection and space communications. Medically, ultraviolet photodiodes are used in monitoring skin cancer. Schottky barrier metal-semiconductor contacts are choice devices for the manufacture of ultraviolet photodiodes due to higher short wavelength sensitivity and fast response. They also require simple fabrication technology: suffer lower breakdown voltages, and record larger leakage currents at lower voltages as compared to p-n structures of the same semiconductor material. Thus the formation of a Schottky contact with high barrier height, low leakage current, and good thermal stability in order to withstand high temperature processing and operation are some of the most important factors in improving the performance of Schottky barrier photodiodes to be used for ultraviolet detection. The first stage of this study was to establish a chemical cleaning and etching technique. It was found that KOH was suitable in reducing C from the surface and that (NH4)2S further reduced the surface oxides. The next phase of the work was to select a metal that will allow UV light to pass through at a high transmission percentage: a combination of annealed Ni/Au was found to be ideal. The transmission percentage of this alloy was found to be above 80%. The next phase was the fabrication of Ni/Au Schottky barrier diodes on GaN to study the electrical characteristics of the diodes. Electrical characterization of the diodes showed that the dominant current transport mechanism was thermionic emission, masked by the effects of series resistance, which resulted from the condition of the GaN surface. Finally, we fabricated GaN UV photodiodes and characterized them in the optoelectronic station designed and produced during this research. Device responsivity as high as 31.8 mA/W for GaN and 3.8 mA/W for AlGaN were recorded. The calculated quantum efficiencies of the photodiodes were 11 % for GaN and 1.7 % for AlGaN respectively.
Download or read book Fabrication and Characterization of GaN Based Light Emitting Diodes Grown on Patterned Sapphire Substrates written by and published by . This book was released on 2006 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Advanced Vertical type GaN based Light emitting Diodes written by 楊於錚 and published by . This book was released on 2013 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical and Optical Properties of ZnSe Schottky Diodes written by Sayid Mohammad Hasan Feiz and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of GaN based Light Emitting Diodes written by Ka-kuen Leung and published by . This book was released on 2010 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Conduction Mechanisms of Tungsten Diselenide Based Schottky Diodes written by Achamma Bobby and published by LAP Lambert Academic Publishing. This book was released on 2011-01 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a study of physical and electrical behaviour of fabricated p-type WSe2 based Schottky diodes coated with different metals and of different thickness.The book opens with a brief narration on the importance of Schottky barrier diodes alongwith a discussion on transitional metal dichalcogenides with specific emphasis to WSe2. The theoretical aspects of Schottky barriers, the growth technique of WSe2 crystals, its structural and compositional characterizations, determination of type and carrier concentrations, method of fabrication of Schottky diodes etc are provided for background information.The detailed analysis of the electrical characterization of these WSe2 diodes is the main theme of the book. The book winds up wth the summary of the results obtained, the conclusions arrived at and a concise discussion on the prospective work.
