Download or read book Fabrication and Electrical Characterization of PiSi i e PtSi Schottky Barrier Diode written by Sultan Ul-Alam Chowdhury and published by . This book was released on 1993 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Electrical Characterization in Quasi Vertical GaN Trench Schottky Barrier Diode written by and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Schottky barrier Diodes for Mixer Applications written by James A. Griffin and published by . This book was released on 1979 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Characterisation of Schottky Barrier Diodes Fabricated on GaAs by Electron Beam Metallisation written by Enoch Mpho Sithole and published by . This book was released on 2001 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Ruthenium Schottky barrier Photo Diodes written by Garland A. King and published by . This book was released on 1980 with total page 73 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Electrical optical Characterization of Bulk GaN based Schottky Diodes written by and published by . This book was released on 2009 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Conduction Mechanisms of Tungsten Diselenide Based Schottky Diodes written by Achamma Bobby and published by LAP Lambert Academic Publishing. This book was released on 2011-01 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a study of physical and electrical behaviour of fabricated p-type WSe2 based Schottky diodes coated with different metals and of different thickness.The book opens with a brief narration on the importance of Schottky barrier diodes alongwith a discussion on transitional metal dichalcogenides with specific emphasis to WSe2. The theoretical aspects of Schottky barriers, the growth technique of WSe2 crystals, its structural and compositional characterizations, determination of type and carrier concentrations, method of fabrication of Schottky diodes etc are provided for background information.The detailed analysis of the electrical characterization of these WSe2 diodes is the main theme of the book. The book winds up wth the summary of the results obtained, the conclusions arrived at and a concise discussion on the prospective work.
Download or read book Fabrication and Characterization of Schottky barrier Mixer Diodes written by Herman A. Belcher and published by . This book was released on 1981 with total page 99 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts written by Krishna Chaitanya Kundeti and published by . This book was released on 2017 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: Titanium (Ti) is a popular metal contact used in fabricating Schottky barrier diodes on silicon carbide (SiC) semiconductor. In this research, Ti/4H-SiC Schottky barrier diodes have been fabricated to investigate the effect of deposition temperature and annealing on the electrical characteristics of the fabricated devices. The parameters such as barrier height, ideality factor and on-resistance were determined from the current-voltage (I-V) and the capacitance-voltage (C-V) measurements at room temperature. The temperature-dependent electrical characteristics are realized by performing current-voltage-temperature (I-V-T) measurements. Furthermore, the material characterizations were performed using Auger Electron Spectroscopy (AES) and x-ray diffraction (XRD) measurements. Thin films of Titanium (Ti) as Schottky contacts were deposited on n-type 4H-SiC substrate by magnetron sputtering at different temperatures form room temperature ~25 °C to 900 °C. In addition, thermal processing was performed by annealing at 500 °C in vacuum and argon environment up to 60 hours and characterized using I-V, C-V, and I-V-T measurements accordingly. The diodes with Ti deposited at 200 °C yield better devices with an average ideality factor of 1.04 and Schottky barrier height of 1.13 eV. The electrical properties shows that the deposition of Schottky contact should be at least below 700 °C and the Schottky contact should be annealed at 500 °C for 12-36 hours in order to obtain acceptable quality of Schottky diode. We believe that these variations in the electrical properties are due to the change in the quality of interfacial layer. The variations in physical/compositional properties of Ti/SiC interface has been investigated using Auger electron spectroscopy and x-ray diffraction, which reveled mainly two kinds of phases: Ti5Si3 and Ti3SiC2 formed at the interfacial layer.
Download or read book Schottky Barrier Diode Fabrication on N GaN for Altraviolet Detection written by Mmantsae Moche Diale and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: There are many potential areas for the utilization of GaN-based nitride materials, including ultraviolet photodetectors. Ultraviolet photodetectors are used in the military for missile plume detection and space communications. Medically, ultraviolet photodiodes are used in monitoring skin cancer. Schottky barrier metal-semiconductor contacts are choice devices for the manufacture of ultraviolet photodiodes due to higher short wavelength sensitivity and fast response. They also require simple fabrication technology: suffer lower breakdown voltages, and record larger leakage currents at lower voltages as compared to p-n structures of the same semiconductor material. Thus the formation of a Schottky contact with high barrier height, low leakage current, and good thermal stability in order to withstand high temperature processing and operation are some of the most important factors in improving the performance of Schottky barrier photodiodes to be used for ultraviolet detection. The first stage of this study was to establish a chemical cleaning and etching technique. It was found that KOH was suitable in reducing C from the surface and that (NH4)2S further reduced the surface oxides. The next phase of the work was to select a metal that will allow UV light to pass through at a high transmission percentage: a combination of annealed Ni/Au was found to be ideal. The transmission percentage of this alloy was found to be above 80%. The next phase was the fabrication of Ni/Au Schottky barrier diodes on GaN to study the electrical characteristics of the diodes. Electrical characterization of the diodes showed that the dominant current transport mechanism was thermionic emission, masked by the effects of series resistance, which resulted from the condition of the GaN surface. Finally, we fabricated GaN UV photodiodes and characterized them in the optoelectronic station designed and produced during this research. Device responsivity as high as 31.8 mA/W for GaN and 3.8 mA/W for AlGaN were recorded. The calculated quantum efficiencies of the photodiodes were 11 % for GaN and 1.7 % for AlGaN respectively.
Download or read book Rapid Thermal and Integrated Processing VII written by Materials Research Society and published by . This book was released on 1998 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal and Integrated Processing written by and published by . This book was released on 1998 with total page 914 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Infrared Detectors and Emitters Materials and Devices written by Peter Capper and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date view of the various detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers and those already working in the IR industry. It provides both an introductory text and a valuable overview of the entire field.
Download or read book Handbook of Monochromatic XPS Spectra written by B. Vincent Crist and published by John Wiley & Sons. This book was released on 2000-10-19 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: These three volumes provide comprehensive information about the instrument, the samples, and the methods used to collect the spectra. The spectra are presented on a landscape format and cover a wide variety of elements,polymers, semiconductors, and other materials. Offers a clear presentation of spectra with the rightamount of experimental detail. All of the experiments have been conducted under controlled conditions on the same instrument by aworld-renowned expert.
Download or read book Handbook of Thin Film Technology written by Leon I. Maissel and published by McGraw-Hill Companies. This book was released on 1970 with total page 1238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Diffusion Processes in Advanced Technological Materials written by Devendra Gupta and published by Springer Science & Business Media. This book was released on 2013-01-15 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: This new game book for understanding atoms at play aims to document diffusion processes and various other properties operative in advanced technological materials. Diffusion in functional organic chemicals, polymers, granular materials, complex oxides, metallic glasses, and quasi-crystals among other advanced materials is a highly interactive and synergic phenomenon. A large variety of atomic arrangements are possible. Each arrangement affects the performance of these advanced, polycrystalline multiphase materials used in photonics, MEMS, electronics, and other applications of current and developing interest. This book is written by pioneers in industry and academia for engineers, chemists, and physicists in industry and academia at the forefront of today's challenges in nanotechnology, surface science, materials science, and semiconductors.
Download or read book Diffusion in Crystalline Solids written by G E Murch and published by Academic Press. This book was released on 2012-12-02 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diffusion in Crystalline Solids addresses some of the most active areas of research on diffusion in crystalline solids. Topics covered include measurement of tracer diffusion coefficients in solids, diffusion in silicon and germanium, atom transport in oxides of the fluorite structure, tracer diffusion in concentrated alloys, diffusion in dislocations, grain boundary diffusion mechanisms in metals, and the use of the Monte Carlo Method to simulate diffusion kinetics. This book is made up of eight chapters and begins with an introduction to the measurement of diffusion coefficients with radioisotopes. The following three chapters consider diffusion in materials of substantial technological importance such as silicon and germanium. Atomic transport in oxides of the fluorite structure is described, and diffusion in concentrated alloys, including intermetallic compounds, is analyzed. The next two chapters delve into diffusion along short-circuiting paths, focusing on the effect of diffusion down dislocations on the form of the tracer concentration profile. The book also discusses the mechanisms of diffusion in grain boundaries in metals by invoking considerable work done on grain-boundary structure. The last two chapters are concerned with computer simulation, paying particular attention to machine calculations and the Monte Carlo method. The book concludes by exploring the fundamental atomic migration process and presenting some state-of-the-art calculations for defect energies and the topology of the saddle surface. Students and researchers of material science will find this book extremely useful.
