Download or read book Fabrication and Characterization of III V Compound Semiconductor Nanostructures written by Marlene Zander and published by . This book was released on 2012 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of Compound Semiconductor Nanostructures written by Roberto Ricardo Panepucci and published by . This book was released on 1996 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor optoelectronic devices are expected to have their performance improved by the use of quantum confinement in the active region with sizes in the range of tenths of nanometers. The decrease in volume of the active region and the modification in the density of states in quantum structures is predicted to improve the threshold current, increase the modulation bandwidth, yield narrower spectral linewidths, and reduce temperature sensitivity in semiconductor lasers. This thesis reports the development and characterization of several fabrication techniques of compound semiconductor nanostructures on $rm Insb{0.53}Gasb{0.47}As/InP$ and $rm Insb{x}Gasb{1-x}As/GaAs$, and the optical properties of the fabricated structures. Requirements on the electron beam lithography for each fabrication technique are presented, with emphasis on the capabilities of the lithography tool and parameters of the resist material, in particular, ZEP-520 and bilayers of PMMA. Photoluminescence measurements at 5 K were used to characterize the optical quality of the samples. Fabrication of quantum wires and dots using highly anisotropic reactive ion etching of $rm Insb{0.53}Gasb{0.47}As/InP$ with $rm CHsb4{:}Hsb2$ plasmas with 40 nm lateral sizes is presented. The fabrication of shallow- and deep-etched quantum wires by selective crystallographic wet etching resulting in very narrow wires as small as 15 nm in width is presented. The free Cl$sb2$ thermal etching of $rm Insb{0.53}Gasb{0.47}As/InP$ was developed, and its applications to quantum wire and quantum dot fabrication are presented. The fabricated structures showed good quality sidewalls comparable to wet etching techniques. Regrowth of InP was investigated on as-etched structures with and without SiO$sb2$ masks. Finally, several processes of sample preparation for the selective area epitaxy of $rm Insb{x}Gasb{1-x}As/GaAs$ on submicron openings in SiO$sb2$ masks for quantum wire fabrication were investigated. The inhomogeneity of the growth across an array of wires was investigated by spatially resolved luminescence and compared to a diffusion limited growth model.

Download or read book Growth and Characterization of III V Compound Semiconductor Nanostructures by Metalorganic Chemical Vapor Deposition written by Ryan S. Dowdy and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Planar 110 GaAs nanowires and quantum dots grown by atmospheric MOCVD have been introduced to non-standard growth conditions such as incorporating Zn and growing them on free-standing suspended films and on 10° off-cut substrates. Zn doped nanowires exhibited periodic notching along the axis of the wire that is dependent on Zn/Ga gas phase molar ratios. Planar nanowires grown on suspended thin films give insight into the mobility of the seed particle and change in growth direction. Nanowires that were grown on the off-cut sample exhibit anti-parallel growth direction changes. Quantum dots are grown on suspended thin films and show preferential growth at certain temperatures. Envisioned nanowire applications include twin-plane superlattices, axial pn-junctions, nanowire lasers, and the modulation of nanowire growth direction against an impeding barrier and varying substrate conditions.

Download or read book Advances in Semiconductor Nanostructures written by Alexander V. Latyshev and published by Elsevier. This book was released on 2016-11-10 with total page 553 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena. The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research. - Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures - Covers recent developments in the field from all over the world - Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries

Download or read book Semiconductor Nanostructures for Optoelectronic Devices written by Gyu-Chul Yi and published by Springer Science & Business Media. This book was released on 2012-01-13 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.

Download or read book Three to Five Compound Semiconductor Material Characterization of Microstructures and Nanostructures on Various Optoelectronic Devices written by Wei Zhou and published by . This book was released on 2004 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Localization Effects in Disordered III V Semiconductor Nanostructures written by Mohammad Khaled Shakfa and published by Cuvillier Verlag. This book was released on 2015-12-07 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the increasing demands industrially as well as scientifically on new optoelectronic devices for specific applications, semiconductor materials with desired energy band-gap are needed. In this context, alloying provides the ability to tailor the energy band gap of a compound semiconductor (ternary or quaternary) through the manipulation of its constituent composition. In this thesis, It is focused on two different III-V-based compound semiconductor materials, Ga(NAsP) and Ga(AsBi), both are promising for long-wavelength optoelectronic applications. In particular, quaternary Ga(NAsP) semiconductor structures can be utilized for the fabrication of intermediate band solar cells, for infrared laser emission, and, with a tremendous potential, for the realization of monolithic optoelectronic integrated circuits on silicon substrate (silicon photonics). On the other hand, ternary Ga(AsBi) semiconductor structures have been employed for a variety of applications including, for example, but not limited to, photoconductive terahertz antennas, light-emitting diodes (LEDs), and optically pumped as well as electrically injected laser diodes. Band gap engineering is achieved in the studied GaAs-based compounds by varying the amount of the incorporated V-element, i.e., nitrogen or bismuth. Despite the advantage of a shrinking in the band-gap energy, the introduction of a small amount of a V-element to a GaAs host structure results in an increase in the disorder potential due to the differences, e.g., in size and electronegativity between the incorporated and substituted anions. The presence of disorder effects within a semiconductor can significantly influence its electronic structure, i.e., the density of localized states (DOS) is increased. Disorder-induced localized states drastically affect carrier recombination processes in semiconductors. The changes in carrier dynamics can be revealed by investigating, e.g., electrical and optical properties of disordered semiconductors. In the presented work, photoluminescence (PL) spectroscopy measurements are employed for the characterization of disorder in semiconductor nanostructures. Beside the need of a qualitative explanation, a quantitative description of disorder effects, i.e., energy scaling of the disorder potential, is a task of crucial importance. Both aspects are discussed through the thesis.

Download or read book Semiconductor Nanostructures written by 湯浩 and published by . This book was released on 2008 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Newnes. This book was released on 2013-04-11 with total page 829 pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures

Download or read book Group IV Semiconductor Nanostructures Volume 832 written by Materials Research Society. Meeting and published by . This book was released on 2005-05-24 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Broad interest and steady progress in the area of Group-IV (Si:Ge:C) semiconductor nanostructures, including quantum dots, wires and wells, has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. This volume brings together scientists from different disciplines to discuss fabrication and characterization techniques and optical and transport properties, as well as applications of Group-IV semiconductor nanostructures. Fields such as photonic systems, nanocrystal memories, light-emitting and THz devices, nanowire-based interconnections and transistors are addressed. Topics include: nanoscale silicon-based photonic systems; Si/SiGe/SiN heterostructures and devices; Si/SiGe quantum cascade laser for terahertz; three-dimensional Si/SiGe nanostructures; Si nanocrystals and porous Si- light-emitting properties; Si nanocrystals and porous Si - other properties; Group-IV semiconductor nanowires; and rare-earth-doped Group-IV semiconductor nanostructures.

Download or read book Fabrication and Characterization of Nanodevices Based on III V Nanowires written by Andrès de Luna bugallo and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires are nanostructures with lengths up to few microns and small cross sections (10ths of nanometers). In the recent years the development in the field of III-N nanowire technology has been spectacular. In particular they are consider as promising building in nanoscale electronics and optoelectronics devices; such as photodetectors, transistors, biosensors, light source, solar cells, etc. In this work, we present fabrication and the characterization of photodetector and light emitter based devices on III-N nanowires. First we present a study of a visible blind photodetector based on p-i-n GaN nanowires ensembles grown on Si (111). We show that these devices exhibit a high responsivity exceeding that of thin film counterparts. We also demonstrate UV photodetectors based on single nanowires containing GaN/AlN multi-axial quantum discs in the intrinsic region of the nanowires. Photoluminescence and cathodoluminescence spectroscopy show spectral contributions above and below the GaN bandgap according to the variation of the discs thickness. The photocurrent spectra show a sub-band-gap peak related to the interband absorption between the confined states in the large Qdiscs. Finally we present a study of photodetectors and light emitters based on radial InGaN/GaN MQW embedded in GaN wires. The wires used as photodetectors showed a contribution below the GaN bandgap. OBIC measurements demonstrate that, this signal is exclusively generated in the InGaN MQW region. We showed that LEDs based on this structure show a electroluminescence emission and a red shift when the In content present in the QWs increases which is in good agreement with photoluminescence and cathodoluminescence results.

Download or read book III V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2016-04-19 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more

Download or read book Physics and Chemistry of III V Compound Semiconductor Interfaces written by Carl W. Wilmsen and published by Springer. This book was released on 1985-08 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

Download or read book Compound Semiconductor Materials and Devices written by Zhaojun Liu and published by Morgan & Claypool Publishers. This book was released on 2016-02-22 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

Download or read book Novel Fabrication Techniques and Transport Characterization of Semiconductor Nanostructures written by Jeffrey W. Sleight and published by . This book was released on 1995 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book III V Semiconductor Materials and Devices written by R.J. Malik and published by Elsevier. This book was released on 2012-12-02 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

Download or read book Growth And Characterization Of Semiconductor Nanostructure For Device Applications written by Dr. Jehova Jire L. Hmar and published by BFC Publications. This book was released on 2023-03-04 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is intended to provide knowledge for students and learners in the field of nanoscale science and nanotechnology. Nanotechnology is design, fabrication and application of nanostructures or nanomaterials, and the fundamental understanding of the relationships between physical properties or phenomena and material dimensions. Nanotechnology deals with materials or structures in nanometer scales, typically ranging from subnanometers to several hundred nanometers. Nanotechnology is a new field or a new scientific domain. Similar to quantum mechanics, on nanometer scale, materials or structures may possess new physical properties or exhibit new physical phenomena. Nanotechnology has an extremely broad range of potential applications from nanoscale electronics and optics and therefore it requires formation of and contribution from multidisciplinary teams of physicists, chemists, materials scientists and engineers. The aim of this book “Growth and Characterization of Semiconductor Nanostructure for Device Applications” is to summarize the fundamentals and established techniques of synthesis, fabrication, characterization and applications of nanomaterials and nanostructures so as to provide readers a systematic and coherent picture about synthesis, fabrication and characterization of nanomaterials.