Download or read book Fabrication and Characterization of Hydrogenated Amorphous Silicon Films CVD Diamond Films and Their Devices written by Hao Jia and published by . This book was released on 1994 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Amorphous Silicon Devices Made by Plasma enhanced Chemical vapor Deposition written by Cherng-chi Yin and published by . This book was released on 1989 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Preparation and Characterization of Hydrogenated Amorphous Silicon Films written by Hwa Chao and published by . This book was released on 1987 with total page 81 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Hydrogenated Amorphous Silicon Films written by Ernest Gerald Bylander and published by . This book was released on 1988 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterisation of Amorphous Hydrogenated Silicon Films written by Chacorn Vipusanavanish and published by . This book was released on 1989 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Physics of Hydrogenated Amorphous Silicon I written by J.D. Joannopoulos and published by Springer. This book was released on 1984 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: With contributions by numerous experts
Download or read book Diamond Films Handbook written by Jes Asmussen and published by CRC Press. This book was released on 2002-01-23 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Diamond Films Handbook is an important source of information for readers involved in the new diamond film technology, emphasizing synthesis technologies and diamond film applications. Containing over 1600 references, drawings, photographs, micrographs, equations, and tables, and contributions by experts from both industry and academia, it includes specific chapters that address film characterization methods and the physics and chemistry of film synthesis. Other topics include deposition chemistry, various techniques for diamond synthesis, diamond heat spreaders, thermal management diamond active electronic devices, and diamond film optics.
Download or read book Atomic scale Characterization of Hydrogenated Amorphous silicon Films and Devices written by Alan C. Gallagher and published by . This book was released on 1998 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research is concerned with improving the electronic properties of hydrogenated amorphous silicon (a-Si:H) films and of photovoltaic (PV) cells that use these films. Two approaches toward this goal are being taken. One is to establish the character of silicon particle growth in the rf glow discharges that are used to make the films and PV cells, and to understand the particle incorporation into the films. The ultimate goal of this effort is to find mitigation techniques that minimize the particle incorporation. During this contract period, we developed a novel particle light-scattering technique that provides a detailed and sensitive diagnostic of small (8-60-nm diameter) particles suspended in the discharge. We used this to measure the particle growth rates and densities, versus conditions in pure-silane discharges. The second program is directed toward measuring the electronic properties of thin-film PV cells, as a function of depth within the cell. The approach being taken is to use a scanning tunneling microscope (STM) to measure the depth-dependent electronic properties of cross-sectioned PV cells. During the present period, measurements on single and tandem amorphous silicon cells have been carried out. Using STM current-voltage spectroscopy, these measurements distinguish the boundaries between the highly conducting and intrinsic layers, and should allow one to deduce the chemical potential versus depth in the cell.
Download or read book Amorphous Silicon Carbide Thin Films written by Mariana Amorim Fraga and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterisation and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.
Download or read book Deposition and Characterization of Hydrogenated Amorphous Silicon Microcrystalline Silicon and Silicon Based Alloy Thin Films written by Cheng Wang and published by . This book was released on 1991 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Atomic scale Characterization of Hydrogenated Amorphous silicon Films and Devices Annual Subcontract Report 14 February 1994 14 April 1995 written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Properties of the hydrogenated amorphous silicon (a-Si:H) films used in photovoltaic (PV) panels are reported. The atomic-scale topology of the surface of intrinsic a-Si:H films, measured by scanning tunneling microscopy (STM) as a function of film thickness, are reported and diagnosed. For 1-500-nm-thick films deposited under normal device-quality conditions from silane discharges, most portions of these surfaces are uniformly hilly without indications of void regions. However, the STM images indicate that 2-6-nm silicon particulates are continuously deposited into the growing film from the discharge and fill approximately 0.01% of the film volume. Although the STM data are not sensitive to the local electronic properties near these particulates, it is very likely that the void regions grow around them and have a deleterious effect on a-Si:H photovoltaics. Preliminary observations of particulates in the discharge, based on light scattering, confirm that particulates are present in the discharge and that many collect and agglomerate immediately downstream of the electrodes. Progress toward STM measurements of the electronic properties of cross-sectioned a-Si:H PV cells is also reported.
Download or read book Atomic scale Characterization of Hydrogenated Amorphous silicon Films and Devices written by and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our research is concerned with improving the electronic properties of hydrogenated amorphous silicon (a-Si:H) films and of photovoltaic (PV) cells that use these films. Two approaches toward this goal are being taken. One is to establish the character of silicon particle growth in the rf glow discharges that are used to make the films and PV cells, and to understand the particle incorporation into the films. The ultimate goal of this effort is to find mitigating techniques that minimize the particle incorporation. During this contract period, we have developed a novel particle light-scattering technique that provides a very detailed and sensitive diagnostic of the particles suspended in the discharge, The second program is directed toward measuring the electronic properties of these thin-film PV cells, as a function of depth within the cell. The approach being taken is to use a scanning tunneling microscope to measure the depth-dependent electronic properties of cross-sectioned PV cells. During the present period, cell cleaving and cross-section locating methods, both in a ultrahigh vacuum environment, have been successfully developed.
Download or read book Thin Film Diamond written by A.H. Lettington and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work, written by leading international authorities, deals with nucleation growth and processing, characterization and electrical, thermal, optical and mechanical properties of thin film diamond. The final chapters are devoted to the broad range of applications of this material.
Download or read book Low Pressure Synthetic Diamond written by Bernhard Dischler and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive presentation of the complete spectrum of methods for CVD-diamond deposition and an overview of the most important applications.
Download or read book Preparation and Characterization of Hydrogenated Amorphous Silicon Thin Films and Thin Film Solar Cells Produced by Ion Plating Techniques Final Report 1 January 1979 31 May 1980 written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion plating techniques for the preparation of hydrogenated amorphous silicon thin films have been successfully developed. The technique involves essentially the evaporation of elemental silicon through a d.c. produced hydrogen plasma. In this way hydrogen has been successfully incorporated into amorphous silicon films in concentrations as high as 30 atomic percent. Infrared spectroscopy indicates the usual SiHx stretching mode at approximately 2000 cm−1. Further evidence for the bonding of hydrogen was obtained from ESR measurement of hydrogenated and unhydrogenated samples. The measured unpaired spin density was a factor of 25 less in the hydrogenated sample. The optical absorption edges of the hydrogenated films fell in the usual range between 1.7 and 1.9 eV. Electrical conductivity measurements indicated a substantial reduction in the density of defect states in the gap as expected. It was also shown that hydrogenated amorphous silicon prepared by ion-plating could be doped by co-evaporation of the dopant element during film deposition. Both co-evaporated phosphorous and co-evaporated bismuth have been found to substantially increase the dark conductivity of a-Si:H while shifting the Fermi level towards the conduction band edge. An x-ray method for estimating the density and hydrogen content of a-Si:H has been developed. The measurement of strain in a-Si:H thin films is discussed. (WHK).
Download or read book Deposition Characterization and Device Application of Amorphous Carbon and Amorphous Silicon Films written by Shixi Liu and published by . This book was released on 1996 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Plasma Deposition of Amorphous Silicon Based Materials written by Pio Capezzuto and published by Elsevier. This book was released on 1995-10-10 with total page 339 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. Focuses on the plasma chemistry of amorphous silicon-based materials Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced Features an international group of contributors Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices
