Download or read book Fabrication and Characterization of Gallium Nitride Based Micro cavity Light Emitting Diodes written by Paul Morgan Pattison and published by . This book was released on 2006 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fabrication and characterization of novel gallium nitride based micro-cavity light emitting diodes is presented. A fabrication process was developed for creating a GaN light emitting diode within a micro-cavity of controllable thickness. The benefits of this structure can be enhanced light extraction efficiency, brightness, spectral purity, and directionality. The fabrication process involves flip chip processing, laser lift-off, and cavity thinning by inductively coupled plasma etching of the nitrogen faced GaN. Using these methods GaN based micro-cavity light emitting diodes were fabricated with cavity thicknesses as low as 350nm.
Download or read book Fabrication and Characterization of Gallium Nitride Light Emitting Diodes written by Sejal N. Chheda and published by . This book was released on 1996 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Gallium Nitride Based Diodes written by Yaqi Wang and published by . This book was released on 2011 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Nitride GaN written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.
Download or read book Synthesis of Compound Semiconducting Materials and Device Applications Gallium Nitride Light Emitting Diodes written by Stanford University. Center for Materials Research and published by . This book was released on 1973 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: The synthesis and characterization of hetero-epitaxial gallium nitride (GaN) films were undertaken with particular reference to the phenomenon of light emission. Gallium nitride was grown by the chemical vapor deposition technique using sapphire substrates. Techniques for characterization included optical, scanning electron, and transmission electron microscopy and measurements of various electrical and optical properties of the films. The thin films of GaN were doped during growth with zinc and magnesium to form n-i junctions. Such material provided the basis for the fabrication of m-i-n light-emitting diodes, which emitted light in the high-energy violet region of the visible spectrum with Mg doping and green light with Zn doping. (Modified author abstract).
Download or read book Fabrication and Characterization of GaN Grown on Silicon Vertical Structure Light Emitting Diodes written by Paulo Ki and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Gallium Nitride Based Devices written by Atanu Das and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Characterization of Gallium Nitride for High Efficiency Indium Gallium Nitride Based Light Emitting Diodes LEDs written by Ezzah Azimah Alias and published by . This book was released on 2015 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Analysis of GaN based Nanorod Light Emitting Diodes written by 王振印 and published by . This book was released on 2008 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Nitride based Electronic and Optoelectronic Devices written by Li Wang and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: For the past decade, Gallium nitride (GaN) material system has earned a significant place in modern power electronic and optoelectronic devices due to its outstanding electric and optical properties. GaN-based device technologies have improved substantially, and are still investigated intensely for advanced performance. The GaN-based devices studied in this dissertation involve Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs) on the electronic side and light emitting diodes (LEDs) on the optoelectronic side.In the SBDs part, GaN SBDs with high voltage blocking capability and low on-state voltage on inductively coupled plasma (ICP) etched commercial LED epi-wafers are studied. Their applications in alternating current (AC) LEDs are demonstrated. It is revealed that the potassium hydroxide (KOH) pretreatment with optimized concentration could eliminate the leakage current due to the reduction of the ICP induced surface defects. Moreover, the numerical values of the surface defect density are extracted by analyzing the leakage current mechanism. In the HEMTs part, the transfer saturation feature of GaN-based HEMTs is investigated firstly. It is observed that the drain current in HEMTs with short gate length becomes saturation as gate bias approaches zero. The theoretical analysis based on a simple series resistance model reveals this saturation feature results from the fact that the total source-drain resistance is independent on gate bias in a short gate length HMET. This conclusion is further verified by device simulation study. Secondly, novel GaN double-gate (DG) HEMTs featuring enhanced back gate-control of the two dimensional electron gas (2DEG) in AlGaN/GaN heterostructures is designed and modeled. The results indicate that the DG GaN-HEMTs can provide a higher maixmum transconductance gain and better immunity of the short channel effects than traditional single-gate HEMTs. At last, the temperature-dependent electrical characteristics of GaN-based HEMTs from room temperature down to 50K are studied. It is observed that the drain saturation current and transconductance increase with the decrease of the temperature. In the LEDs part, quantum dots (QDs) coupled non-resonant microcavity light emitting diodes (LEDs) with micro-holes is designed and demonstrated to enhance non-radiative energy transfer between InGaN/GaN quantum wells (QWs) and QDs for the first time by tailoring the radiative relaxation lifetime of excitations in QWs. The blue emission from the InGaN/GaN QWs is detuned from the resonant modes of the microcavity to extend the radiative recombination lifetime in QWs. The direct contact of QDs and the QWs active layer is achieved by depositing QDs into the micro-holes on the LEDs. This non-resonant microcavity structure leads to a 3.2 times enhancement of the effective quantum efficiency of QDs in microcavity LEDs than the LEDs without microcavity structure.
Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.
Download or read book Fabrication and Characterization of Gallium Nitride Based Working Electrodes for Hydrogen Generation by Water Photoelectrolysis written by 劉書巖 and published by . This book was released on 2012 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Gallium Nitride Biointerfaces written by Corey Michael Foster and published by . This book was released on 2013 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Gallium Nitride Based Heterojunctions Etched by Photoelectrochemical Wet Etching written by Jie Gao and published by . This book was released on 2006 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Vertical Gallium Nitride PowerDevices Fabrication and Characterisation written by Rico Hentschel and published by BoD – Books on Demand. This book was released on 2021-01-03 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Efficient power conversion is essential to face the continuously increasing energy consumption of our society. GaN based vertical power field effect transistors provide excellent performance figures for power-conversion switches, due to their capability of handling high voltages and current densities with very low area consumption. This work focuses on a vertical trench gate metal oxide semiconductor field effect transistor (MOSFET) with conceptional advantages in a device fabrication preceded GaN epitaxy and enhancement mode characteristics. The functional layer stack comprises from the bottom an n+/n--drift/p-body/n+-source GaN layer sequence. Special attention is paid to the Mg doping of the p-GaN body layer, which is a complex topic by itself. Hydrogen passivation of magnesium plays an essential role, since only the active (hydrogen-free) Mg concentration determines the threshold voltage of the MOSFET and the blocking capability of the body diode. Fabrication specific challenges of the concept are related to the complex integration, formation of ohmic contacts to the functional layers, the specific implementation and processing scheme of the gate trench module and the lateral edge termination. The maximum electric field, which was achieved in the pn- junction of the body diode of the MOSFET is estimated to be around 2.1 MV/cm. From double-sweep transfer measurements with relatively small hysteresis, steep subthreshold slope and a threshold voltage of 3 - 4 V a reasonably good Al2O3/GaN interface quality is indicated. In the conductive state a channel mobility of around 80 - 100 cm2/Vs is estimated. This value is comparable to device with additional overgrowth of the channel. Further enhancement of the OFF-state and ON-state characteristics is expected for optimization of the device termination and the high-k/GaN interface of the vertical trench gate, respectively. From the obtained results and dependencies key figures of an area efficient and competitive device design with thick drift layer is extrapolated. Finally, an outlook is given and advancement possibilities as well as technological limits are discussed.
Download or read book Fabrication and Characterization of Gallium Nitride Electronic Devices written by Jerry Wayne Johnson and published by . This book was released on 2001 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Gallium Nitride Schottky Diode Devices for Determination of Electron hole Pair Creation Energy and Intrinsic Neutron Sensitivity written by Padhraic Liam Mulligan and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
