Download or read book Fabrication Technology and Device Modeling for Gallium Arsenide Metal semiconductor Field effect Transistor written by Chunlin Liang and published by . This book was released on 1990 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of Metal Oxide Semiconductor Field Effect Transistors on Silicon on Insulator Substrate written by David T. Mathis and published by . This book was released on 2011 with total page 67 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Indium Gallium Arsenide Metal Oxide Semiconductor Field Effect Transistors written by Weike Wang and published by . This book was released on 2011 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finally, the reverse junction leakage current has been analyzed by calculating diffusion, generation, and tunneling currents, and compared with measurement at room temperature. We find that the leakage current increases with In mole fraction. Generation and tunneling currents dominate in medium- and high-bias regions, respectively.

Download or read book Design Fabrication and Performance of Aluminum Gallium Arsenide gallium Arsenide Modulation doped Field effect Transistors for High speed Applications written by Allen Nicholas Lepore and published by . This book was released on 1988 with total page 468 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide Metal Semiconductor Field Effect Transistor Fabrication Based Upon the Processing of an Individual Die written by Lynn Fenton Fuller and published by . This book was released on 1979 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Fabrication and Characterization of a 4H silicon Carbide Metal semiconductor Field Effect Transistor written by Ira Ardoin and published by . This book was released on 2015 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fabrication of the 4H-silicon carbide metal semiconductor field effect transistor (MESFET) is occurring in the Microelectronics Engineering Laboratory (MEL). There are various experiments occurring that characterize different aspects of the device, in order to achieve its optimum performance. The silicon dioxide (SiO2) layer achieves widespread use in the microelectronics industry. This may be used for the dielectric field effect in MOS (metal oxide semiconductor) devices, as a field oxide for isolation between source, gate, and drain contacts, or for device isolation on a very crowded integrated circuit (IC). In this project, the SiO2 is used for isolation between source, gate, drain, and devices. It is imperative to minimize the defect density in the SiO2 layer to increase the reliability and performance of these devices. The quality of the SiO2 is thus characterized by the fabrication of SiC MOS capacitors. Thermal oxidation has been utilized in the fabrication of the SiO2 in the 4H-SiC MOS capacitors adopting the nickel-SiO2-4H-SiC (Ni/SiO2/4H-SiC) structure. The SiO2 layers have been grown onto Si-face and C-face 4H-SiC substrates employing the techniques of sputtering and wet thermal oxidation. The recipes for deposition by these techniques are optimized by trial and error method. Atomic force microscopy (AFM) analysis is employed in the investigation of growth effects of SiO2 on the Si- and C-face of these SiC substrates. MOS capacitors are made utilizing sputtering and wet oxidation methods on the Si-face of 4H-SiC wafers, which are studied utilizing C-V (capacitance versus voltage) techniques.

Download or read book Fabrication and Characterization of Aluminum Gallium Arsenide gallium Arsenide Heterojunction Bipolar Transistors written by Amish J. Shah and published by . This book was released on 1991 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Development of a Gallium Arsenide Metaloxide Semiconductor Transistor written by H. BECKE and published by . This book was released on 1964 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work described was intended to demonstrate the feasibility of using gallium arsenide for MOS transistors and to develop a process for the production of a few specific samples. The major problem posed by the development of a useful gallium arsenide MOS transistor was the reduction of the state density at the oxide-gallium arsenide interface. The surface varactor was used, as a test vehicle, in the investigation of this interface. Low interface state densities were obtained, and incorporated into the oxide deposition process. A technique for producing low surface concentration n-type diffusions was then developed and used to fabricate devices. To characterize these devices, a model similar to that proposed for the field effect transistor was extended to include the effect of interface states. The report includes a detailed description of the process developed for the fabrication of n-channel depletion type gallium arsenide MOS transistors. Electrical measurements made on several experimental devices are described, and the average mobility of negative charges at the gallium arsenide surface is calculated from the device characteristics. A comparison is made of the characteristics of a gallium arsenide device with those of a typical silicon device, having the same geometry. (Author).

Download or read book Gallium Arsenide IC Technology written by Neil Sclater and published by . This book was released on 1988 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Silicon Carbide Junction Field Effect Transistors and Metal Oxide Semiconductor Field Effect Transistors written by Alvin Ong and published by . This book was released on 2007 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt: Generating the device models requires measured device characteristics like drain-source on-resistance and switching times. The objective of this research was to develop an automated bench top test system to characterize the SiC MOSFET and JFET for device modeling. A high power curve tracer and specially designed test board along with a data acquisition program developed in LabVIEW(TM) provide for a quick and accurate measurement of the device parameters, thus providing with vital information against which their models are validated.

Download or read book The Gallium Arsenide Metal Semiconductor Field Effect Transistor MESFET written by G. Rogers and published by . This book was released on 1981 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization Modeling and Simulation of Compound Semiconductor Field effect Transistors and Integrated Circuits written by Jeffrey Scott Conger and published by . This book was released on 1992 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Monolithic Integration of Gallium Arsenide Light emitting Diodes and Silicon Field effect Transistors written by Ruby Nandini Ghosh and published by . This book was released on 1986 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide Field Effect Transistors with Semi Insulated Gates written by D. W. Shaw and published by . This book was released on 1977 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report summarizes the results of a program for development and evaluation of gallium arsenide field effect transistors with semi-insulated gates (SIGFETs). These devices are potentially applicable to a number of microwave systems, including active-element phased-array radars and ECM jammers. Included in the scope of the program was an analysis of Class A and Class B FET amplifiers; design, fabrication, and dc and rf characterization of SIGFETs; evaluation of procedures for formation of n(+) contact regions for FETs; and an objective comparison of the properties of SIGFETs with those of conventional GaAs FETs. Theoretical analyses of the dc and rf operating characteristics of Class A and Class B FET amplifiers showed that maximum efficiency is expected for Class B operation into a tuned load. This conclusion was supported by the experimental observation that maximum efficiency was obtained for GaAs FETs when the gate bias approaches the pinch-off voltage, i.e., approaching Class B operation. Procedures were developed for fabrication of SIGFETs using either epitaxial growth or ion bombardment to form the region of high resistivity or semi-insulating GaAs to be located beneath the gate contact metal. SIGFETs fabricated by this procedure were compared with conventional FETs (without semi-insulated gates) fabricated from the same starting material. The SIGFETs have higher gate reverse breakdown voltages, lower transconductances, and approx. 1 dB lower small signal gains.

Download or read book The Design Fabrication and Characterization of High performance Self aligned Gallium Arsenide aluminum Gallium Arsenide and Gallium Arsenide gallium Indium Arsenide aluminum Gallium Arsenide Heterojunction Bipolar Transistors written by Dean Winston Barker and published by . This book was released on 1989 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Characterization of Aluminum Gallium Arsenide Buffer Gallium Arsenide Active Layer Metal Semiconductor Field Effect Transistors written by Douglas James Arnold and published by . This book was released on 1984 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: