Download or read book Fabrication and Characterization of GaAs GaAsSb Heterojunction Bipolar Transistors for Wireless Communication Applications written by I-Ning Ku and published by . This book was released on 2001 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Characterization of ALGaAs GaAs Heterojunction Bipolar Transistors written by Chun-Liang Alec Chen and published by . This book was released on 1993 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.

Download or read book High Speed Compound Semiconductor Devices for Wireless Applications and State of the Art Program on Compound Semiconductors XXXIII written by A. G. Baca and published by The Electrochemical Society. This book was released on 2000 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings were published before the two symposia actually took place, and some of the papers presented were not received in time. The 21 that did make it discuss compound semiconductors from perspectives of recent developments in materials, growth, characterization, processing, device fabrication, and reliability. Among the specific topics are the non-crystallographic wet etching of gallium arsenide, fabricating an integrated optics One to Two optical switch, and the fabrication and materials characterization of pulsed laser deposited nickel silicide ohmic contacts to 4H n-SiC. Annotation copyrighted by Book News, Inc., Portland, OR

Download or read book Design Fabrication and Characterization of Ultra High Speed InP GaAsSb InP Double Heterojunction Bipolar Transistors written by Martin W. Dvorak and published by . This book was released on 2001 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication Characterization and Modeling of NPN InGaP GaAs Heterojunction Bipolar Transistors written by Ying Wu and published by . This book was released on 1996 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book SiGe GaAs and InP Heterojunction Bipolar Transistors written by Jiann S. Yuan and published by Wiley-Interscience. This book was released on 1999-04-12 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, comprehensive guide to heterojunction bipolar transistor technology. Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures. Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications. This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.

Download or read book Reliability Study of InGaP GaAs Heterojunction Bipolar Transistor MMIC Technology by Characterization Modeling and Simulation written by Xiang Liu and published by . This book was released on 2011 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.

Download or read book Fabrication and Characterisation of AlGaAs GaAs Heterojunction Bipolar Transistors HBTs written by Hong Wang and published by . This book was released on 1997 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Device Design and Fabrication of InGaP GaAsSb GaAs DHBTs written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: (Uncorrected OCR) Abstract of thesis entitled Device Design and Fabrication of InGaP/GaAsSb/GaAs DHBTs submitted by Cheung Chi Chuen, Cecil for the degree of Master of Philosophy at the University of Hong Kong in December 2003 A study of the InGaP/GaAsSb/GaAs double heterojunction bipolar transistor (DHBT) is presented. A novel device structure is designed, fully strained pseudomorphic GaAsSb with different Sb (Antimony) compositions is used as the base layer and an InGaP layer is used as the emitter. Thus both eliminates the misfit dislocations and increases the valence band discontinuity at the InGaP/GaAsSb interface. Various aspects of device performance, including the IV characteristics, current gain, ideality factor, current transport mechanism, high frequency performances and the turn on voltage of the InGaP/GaAsSb/GaAs DHBT are investigated. The results indicate that GaAsSb is a promising base material for reducing the turn-on voltage of GaAs HBTs. The thesis is organized into five chapters. Chapter One, an introductory chapter, defines the aim of the study. Chapter Two reviews the relevant literature and discusses the basic principle of the HBT device physics and the DC (direct current) and RF (radio-frequency) characteristics of the HBT devices. Chapter Three describes the device design and fabrication process in detail, and is illustrated with captioned diagrams. Chapter Four discusses and analyzes the experimental results, and is illustrated with appropriate graphs and tables. Chapter Five discusses the significance of the research in summary form, and suggests some practical ideas for future development.

Download or read book Design Fabrication Characterization and Simulation of High Performance Npn InGaP GaAs Heterojunction Bipolar Phototransistors and Heterojunction Bipolar Transistors written by Ravi Sridhara and published by . This book was released on 1997 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Current Trends In Heterojunction Bipolar Transistors written by M F Chang and published by World Scientific. This book was released on 1996-01-29 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.

Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.

Download or read book InGaP GaAs Heterojunction Bipolar Transistors and Phototransistors written by Jowan Masum and published by . This book was released on 1997 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Novel Applications of GaInP to GaAs Based Heterojunction Bipolar Transistors HBTs written by Shyh-Liang Fu and published by . This book was released on 1996 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Fabrication and Analysis of Current Transport in N P N and P N P GaAs AlxGa1 xAs Heterojunction Bipolar Transistors written by Terence Joseph De Lyon and published by . This book was released on 1988 with total page 622 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Principles and Analysis of AlGaAs GaAs Heterojunction Bipolar Transistors written by Juin J. Liou and published by Artech House Publishers. This book was released on 1996 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book devoted entirely to HBTs, this reference examines the basic concept, standard and advanced structures, noise performance, reliability issues, and simulation. It's main emphasis is on device physics and its mathematical representations, through which the operational characterization of AlGaAs/GaAs HBTs can be understood. It enables device engineers, device researchers, and circuit designers to increase their knowledge of HBT principles and behavior with significantly less literature research time, and to design optimal HBTs with minimal design time. Extensively referenced, with 150 illustrations and 250 equations.