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Book Fabrication and Characterization of Antimonide Based Near Infrared Photodetectors

Download or read book Fabrication and Characterization of Antimonide Based Near Infrared Photodetectors written by Vinay Bhagwat and published by . This book was released on 2005 with total page 165 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Fabrication and Characterization of Dilute Nitride Indium Antimonide for Long Wavelength Infrared Applications

Download or read book Fabrication and Characterization of Dilute Nitride Indium Antimonide for Long Wavelength Infrared Applications written by Pham Huynh Tram and published by . This book was released on 2012-03 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, there has been increased interest in long wavelength infrared (LWIR) materials because of their applications in civilian and military imaging. Among many on-going research materials, dilute nitride indium antimonide (InSbN) has attracted great attention because of the unique characteristics of dilute nitride III-V compounds, which could complement the ubiquitous mercury cadmium telluride (HgCdTe) material in terms of performance and manufacturing. This book presents the molecular beam epitaxy (MBE) growth and characterisation of InSb and InSbN materials, based on the research work under the Compound Semiconductor and Quantum Information group, Nanyang Technological University, Singapore.

Book Fabrication and Characterization of Dilute Nitride Indium Antimonide for Long Wavelength Infrared Applications

Download or read book Fabrication and Characterization of Dilute Nitride Indium Antimonide for Long Wavelength Infrared Applications written by Pham Huynh Tram and published by Nova Science Publishers. This book was released on 2014-05-10 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents the molecular beam epitaxy (MBE) growth and characterisation of InSb and InSbN materials, based on the research work under the Compound Semiconductor and Quantum Information group, Nanyang Technological University, Singapore.

Book Sb based Materials for Infrared Photodetectors

Download or read book Sb based Materials for Infrared Photodetectors written by Erick John Michel and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Antimony based Type II Superlattice Infrared Photodetectors on Indium arsenide Substrates

Download or read book Antimony based Type II Superlattice Infrared Photodetectors on Indium arsenide Substrates written by Daniel Y. Zuo and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The wide variety of applications for mid- and far-infrared detection has spurred the study of cutting-edge technologies for use in the next genera- tion of detectors in place of the current systems, such as mercury cadmium telluride. While type-II superlattices over a number of advantages in design and material quality, theoretical predictions of their high performance have yet to be realized. This work concentrates on novel designs, fabrication, and characterization of type-II superlattice infrared detectors. In this work we present the first InAs/GaSb type-II superlattice photode- tectors grown on an InAs substrate via metal-organic chemical vapor depo- sition. The design and fabrication of the devices are detailed, along with several characterization processes, including low-temperature electron beam induced current (EBIC) to study structural defects. Through this work, the optical absorption of the undoped substrate was shown to be significantly lower than that of GaSb. The detectors have a cutoff wavelength (50% re- sponsivity) of 9.5 um at 78 K. Their R0A values are on the order of 10^-2 Ohm*cm2. The typical peak responsivity is 1.9 A/W, and the devices have a peak detectivity of 6.8 * 10^9 cm*Hz^1/2 /W at 78 K.

Book Theory  Fabrication and Characterization of Quantum Well Infrared Photodetectors

Download or read book Theory Fabrication and Characterization of Quantum Well Infrared Photodetectors written by Janet L. Pan and published by . This book was released on 2000 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Dissertation Abstracts International

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2006 with total page 764 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Theory  Fabrication and Characterization of Quantum Well Infrared Photodetectors

Download or read book Theory Fabrication and Characterization of Quantum Well Infrared Photodetectors written by Janet L. Pan and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Characterization of Antimony based Type II Superlattice Infrared Photodetectors

Download or read book Characterization of Antimony based Type II Superlattice Infrared Photodetectors written by Qi Lou and published by . This book was released on 2007 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Fabrication and Characterization of Antimony Type II Quantum Well Photodetectors

Download or read book Fabrication and Characterization of Antimony Type II Quantum Well Photodetectors written by Bradley J. Rawlins and published by . This book was released on 2003 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Pfrontener Obstb  ume

Download or read book Pfrontener Obstb ume written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Infrared Photodetectors Based on Low Dimensional Materials

Download or read book Infrared Photodetectors Based on Low Dimensional Materials written by Nan Guo and published by Springer Theses. This book was released on 2019-10-30 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Antimony based Type II Superlattice Infrared Detectors

Download or read book Antimony based Type II Superlattice Infrared Detectors written by Martin Mandl and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Numerous applications within the mid- and long-wavelength infrared are driving the search for efficient and cost effective detection technologies in this regime. Theoretical calculations have predicted high performance for InAs/GaSb type-II superlattice structures, which rely on mature growth of III-V semiconductors and offer many levels of freedom in design due to band structure engineering. This work focuses on the fabrication and characterization of type-II superlattice infrared detectors. Standard UV-based photolithography was used combined with chemical wet or dry etching techniques in order to fabricate antinomy-based type-II superlattice infrared detectors. Subsequently, Fourier transform infrared spectroscopy and radiometric techniques were applied for optical characterization in order to obtain a detector's spectrum and response, as well as the overall detectivity in combination with electrical characterization. Temperature dependent electrical characterization was used to extract information about the limiting dark current processes. This work resulted in the first demonstration of an InAs/GaSb type-II superlattice infrared photodetector grown by metalorganic chemical vapor deposition. A peak detectivity of 1.6x10^9 Jones at 78 K was achieved for this device with a 11 micrometer zero cutoff wavelength. Furthermore the interband tunneling detector designed for the mid-wavelength infrared regime was studied. Similar results to those previously published were obtained.

Book Antimonide based Infrared Detectors

Download or read book Antimonide based Infrared Detectors written by Antoni Rogalski and published by . This book was released on 2018 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--

Book Antimonide based Type II Quantum Well Infrared Photodetectors

Download or read book Antimonide based Type II Quantum Well Infrared Photodetectors written by Jian Li and published by . This book was released on 2005 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Antimonide based Infrared Detectors

Download or read book Antimonide based Infrared Detectors written by Antoni Rogalski and published by . This book was released on 2018 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--