Download or read book Fabrication and Characterization of AlGaN GaN RF Power MOS HEMTs written by and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Advanced AlGaN GaN HEMT Technology Design Fabrication and Characterization written by Abel Fontserè Recuenco and published by . This book was released on 2014 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nowadays, the microelectronics technology is based on the mature and very well established silicon (Si) technology. However, Si exhibits some important limitations regarding its voltage blocking capability, operation temperature and switching frequency. In this sense, Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) devices have the potential to make this change possible. The unique combination of the high-breakdown field, the high-channel electron mobility of the two dimensional electron gas (2DEG), and high-temperature of operation has attracted enormous interest from social, academia and industry and in this context this PhD dissertation has been made. This thesis has focused on improving the device performance through the advanced design, fabrication and characterization of AlGaN/GaN HEMTs, primarily grown on Si templates. The first milestone of this PhD dissertation has been the establishment of a know-how on GaN HEMT technology from several points of view: the device design, the device modeling, the process fabrication and the advanced characterization primarily using devices fabricated at Centre de Recherche sur l'Hétéro-Epitaxie (CRHEA-CNRS) (France) in the framework of a collaborative project. In this project, the main workhorse of this dissertation was the explorative analysis performed on the AlGaN/GaN HEMTs by innovative electrical and physical characterization methods. A relevant objective of this thesis was also to merge the nanotechnology approach with the conventional characterization techniques at the device scale to understand the device performance. A number of physical characterization techniques have been imaginatively used during this PhD determine the main physical parameters of our devices such as the morphology, the composition, the threading dislocations density, the nanoscale conductive pattern and others. The conductive atomic force microscopy (CAFM) tool have been widely described and used to understand the conduction mechanisms through the AlGaN/GaN Ohmic contact by performing simultaneously topography and electrical conductivity measurements. As it occurs with the most of the electronic switches, the gate stack is maybe the critical part of the device in terms of performance and longtime reliability. For this reason, how the AlGaN/GaN HEMT gate contact affects the overall HEMT behaviour by means of advanced characterization and modeling has been intensively investigated. It is worth mentioning that the high-temperature characterization is also a cornerstone of this PhD. It has been reported the elevated temperature impact on the forward and the reverse leakage currents for analogous Schottky gate HEMTs grown on different substrates: Si, sapphire and free-standing GaN (FS-GaN). The HEMT' forward-current temperature coefficients (T̂a) as well as the thermal activation energies have been determined in the range of 25-300 oC. Besides, the impact of the elevated temperature on the Ohmic and gate contacts has also been investigated. The main results of the gold-free AlGaN/GaN HEMTs high-voltage devices fabricated with a 4 inch Si CMOS compatible technology at the clean room of the CNM in the framework of the industrial contract with ON semiconductor were presented. We have shown that the fabricated devices are in the state-of-the-art (gold-free Ohmic and Schottky contacts) taking into account their power device figure-of-merit ((VB̂2)/Ron) of 4.05×10̂8 W/cm̂2. Basically, two different families of AlGaN/GaN-on-Si MIS-HEMTs devices were fabricated on commercial 4 inch wafers: (i) using a thin ALD HfO2 (deposited on the CNM clean room) and (ii) thin in-situ grown Si3N4, as a gate insulator (grown by the vendor). The scientific impact of this PhD in terms of science indicators is of 17 journal papers (8 as first author) and 10 contributions at international conferences.

Download or read book High frequency AlGaN GaN HEMTs Fabrication and Noise Characterization written by Alexei Vasilievich Vertiatchikh and published by . This book was released on 2004 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design Fabrication and Characterization of GaN based Devices for Power Applications written by Burcu Ercan and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Nitride (GaN) and related alloys have gained considerable momentum in recent years since the improvement in silicon (Si) based power devices is now only incremental. GaN is a promising material for high-power, high-frequency applications due to its wide bandgap, high carrier mobility which result in devices with high breakdown voltage, low on-resistance, and high temperature stability. Despite the superior properties of GaN there is still room for improvement in device design and fabrication to reach theoretical limits of GaN based devices. Reaching the theoretical critical electric field in GaN devices has been challenging due to the presence of threading dislocations, surface impurities introduced during material growth and fabrication process. In order to prevent premature breakdown of the devices, these defects must be mitigated. In this study, avalanche breakdown was observed in p-n diodes fabricated with low power reactive ion etch with a moat etch profile, followed by Mg ion implantation to passivate the plasma damages. Additionally, the devices were fabricated on free standing GaN substrates which has lower dislocation than sapphire or SiC substrates. The electron and hole impact ionization coefficients were extracted separately by analyzing the ultraviolet (UV) assisted reverse bias current voltage measurements of vertical p-n and n-p diodes. GaN and related alloy such as Indium Aluminum Nitride (InAlN) or Aluminum Gallium Nitride (AlGaN) form a high mobility, high density sheet charge at the heterojunction. High electron mobility transistor (HEMT) devices fabricated on these layer stacks are depletion mode (normally-on) devices with a negative threshold voltage. However, normally-on devices are not preferred in power applications due to safety reasons and to reduce the external circuitry. Therefore, the development of an enhancement mode (normally-off) GaN based high electron mobility transistors (HEMT) with positive threshold voltage is important for next generation power devices. Several methods, such as growing a p-GaN on the barrier layer, recessed gate by dry etching, plasma treatment under the gate have been previously studied to develop enhancement-mode HEMT devices. In this study, MOS-HEMT devices were fabricated by selective thermal oxidation of InAlN to reduce InAlN barrier thickness under the gate contact. The thermal oxidation of InAlN occurs at temperatures above 600°C, while GaN oxidation occurs above 1000°C at a slow rate which allows the decrease of the InAlN barrier layer thickness under the gate in a reliable way due to the self-limiting nature of oxidation. A positive shift in the threshold voltage and a reduction in reverse leakage current was demonstrated on MOS-diode structures by thermally oxidizing InAlN layers with In composition of 0.17, 0.178 and 0.255 for increasing oxidation durations at 700°C and 800°C. Enhancement mode device operation was demonstrated on lattice matched InAlN/AlN/GaN/Sapphire MOS-HEMT devices by selective thermal oxidation of InAlN layer under the gate contact. A positive threshold voltage was observed for devices which were subjected to thermal oxidation at 700°C for 10, 30 and 60 minutes. The highest threshold voltage was observed as 1.16 V for the device that was oxidized for 30 minutes at 700°C. The maximum transconductance and the maximum drain saturation current of this device was 4.27 mS/mm and 150 mA/mm, respectively.

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

Download or read book Device Characterization and Modeling of Large Size GaN HEMTs written by Jaime Alberto Zamudio Flores and published by kassel university press GmbH. This book was released on 2012-08-21 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. ANalysis of such capacitances leads to original equations, employed to form capacitance ratios. BAsic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. THe extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. ALl IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character.

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Download or read book GaN based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.

Download or read book Advanced Gate Stacks for High Mobility Semiconductors written by Athanasios Dimoulas and published by Springer Science & Business Media. This book was released on 2008-01-01 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book Power RF Operation of AlGaN GaN HEMTs Grown on Insulating Silicon Carbide Substrates written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We report on the technology and microwave characterization of AlGaN/GaN power HEMTs on SiC substrate. DC and S-parameter are discussed, together with load-pull results on devices up to 4mm gate width. A power density of 5.2 W/mm is obtained for devices up to 2 mm gate width. The maximum power level achieved is 13.8 W at 2 GHz.

Download or read book Large signal Modeling of GaN HEMTs for Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and published by kassel university press GmbH. This book was released on 2008 with total page 153 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Design Fabrication and Characterization of GaN HEMTs for Power Switching Applications written by Björn Hult and published by . This book was released on 2022 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Large Signal Modeling of GaN Device for High Power Amplifier Design written by Anwar Hasan Jarndal and published by kassel university press GmbH. This book was released on 2006 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Fabrication and Analysis of High Performance AlGaN GaN Transistor written by and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.