Download or read book Fabrication and Characterization of A1 4H SiC Schottky Diodes written by Jingyan Zhang and published by . This book was released on 2002 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Fabrication and Characterisation of 4H SiC Schottky Barrier Diodes written by Dominique Johanne Morrison and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Analysis of 4H SiC Diodes written by Yeganeh Bonyadi and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Fabrication and Characterisation of 4H silicon Carbide Schottky Barrier Diodes written by Dominique Johanne Morrison and published by . This book was released on 2000 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Schottky barrier Diodes for Mixer Applications written by James A. Griffin and published by . This book was released on 1979 with total page 68 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Gallium Arsenide Metal Oxide Semiconductor Field effect Transistors and Thermography of Silicon Carbide Schottky Diodes written by Karthik Rajagopalan and published by . This book was released on 2010 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Characterization of 4H and 6H silicon Carbide Schottky Diodes written by Jeffrey C. Wiemeri and published by . This book was released on 1995 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Characterization of 4H and 6H silicon Carbide Schottky Diodes written by Jeffrey C. Wiemeri and published by . This book was released on 1995 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Schottky Diodes Using Single Wall Carbon Nanotubes written by Brandon E. Luquette and published by . This book was released on 2008 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Nb Si and NbN Si Schottky Diodes written by Songjian Wu and published by . This book was released on 1997 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book The Gospel According to Saint Luke in the Text of the Authorised Version written by and published by . This book was released on 1952 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication and Characterization of Schottky barrier Mixer Diodes written by Herman A. Belcher and published by . This book was released on 1981 with total page 99 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Design and Fabrication of High Voltage 4H SiC Schottky Barrier Diodes written by Luo, Xixi and published by . This book was released on 2019 with total page 116 pages. Available in PDF, EPUB and Kindle. Book excerpt: A novel design of mesa-etch termination and Superjunction JBS diode structure has been proposed and optimized. The new mesa-etch termination can achieve over 90% of ideal maximal breakdown voltage within a wide sidewall implant dose window (~9e16 cm−3). Besides the high tolerance on implant dose, the proposed design also exhibits high tolerance on the etch sidewall angle: minimal maximum breakdown voltage was observed with etch sidewall angle variations. The Superjunction JBS diode can obtain both 96.4% maximum super junction breakdown voltage and 76.6% JBS Schottky surface electric field reduction. The super junction maximal breakdown voltage is 1.5 times large as the conventional Schottky diode breakdown voltage and the leakage current is logarithmically related to the surface electric field. The superior breakdown voltage represents a large improvement on the power rectifier performance. Based on these structure improvements, vertical 4H-SiC Schottky Diodes have been fabricated and tested. Vertical 4H-SiC Schottky Diode without any edge termination has a breakdown voltage as large as 692 V and exhibits an on-state specific resistance as small as 7.9 mΩ*cm2. Such breakdown voltage is much higher than simulation results. In the meantime, on-state resistance is also much larger than the simulation results. The mechanism for these improved power rectifier performances will be furthered investigated in future studies
Download or read book The Properties of SiC Barrier Diodes Fabricated with Ti Schottky Contacts written by Krishna Chaitanya Kundeti and published by . This book was released on 2017 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: Titanium (Ti) is a popular metal contact used in fabricating Schottky barrier diodes on silicon carbide (SiC) semiconductor. In this research, Ti/4H-SiC Schottky barrier diodes have been fabricated to investigate the effect of deposition temperature and annealing on the electrical characteristics of the fabricated devices. The parameters such as barrier height, ideality factor and on-resistance were determined from the current-voltage (I-V) and the capacitance-voltage (C-V) measurements at room temperature. The temperature-dependent electrical characteristics are realized by performing current-voltage-temperature (I-V-T) measurements. Furthermore, the material characterizations were performed using Auger Electron Spectroscopy (AES) and x-ray diffraction (XRD) measurements. Thin films of Titanium (Ti) as Schottky contacts were deposited on n-type 4H-SiC substrate by magnetron sputtering at different temperatures form room temperature ~25 °C to 900 °C. In addition, thermal processing was performed by annealing at 500 °C in vacuum and argon environment up to 60 hours and characterized using I-V, C-V, and I-V-T measurements accordingly. The diodes with Ti deposited at 200 °C yield better devices with an average ideality factor of 1.04 and Schottky barrier height of 1.13 eV. The electrical properties shows that the deposition of Schottky contact should be at least below 700 °C and the Schottky contact should be annealed at 500 °C for 12-36 hours in order to obtain acceptable quality of Schottky diode. We believe that these variations in the electrical properties are due to the change in the quality of interfacial layer. The variations in physical/compositional properties of Ti/SiC interface has been investigated using Auger electron spectroscopy and x-ray diffraction, which reveled mainly two kinds of phases: Ti5Si3 and Ti3SiC2 formed at the interfacial layer.
Download or read book Electrical Characterization of 4H Silicon Carbide Schottky Diodes Under Electron Radiation written by Sabuhi Ganiyev and published by . This book was released on 2015 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book American Doctoral Dissertations written by and published by . This book was released on 2002 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Characterization of Process induced Defects in 4H SiC written by Shandirai Malven Tunhuma and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide has become an important material in the implementation of next generation photonics. It harbors the silicon vacancy (VSi) which can be transformed to a carbon antisite-vacancy pair (CSiVC) defect through thermal treatment. This defect has quantum functionality and can be used as a single photon source at room temperature. Using defect engineering, this technology is set to surpass advances made in other similar systems because it is being developed on existing standard industrial practices, fabrication protocols and mechanisms. These include techniques such as irradiation, annealing and ion implantation. The motivation of this work was to establish sound device fabrication protocols to be used in the device implementation. In this thesis DLTS and Laplace DLTS have been used to characterize deep level defects induced by various processes in 4H-SiC. Schottky barrier diodes were used to create the space charge region required to probe the defect characteristics using capacitance DLTS. From the DLTS and Laplace DLTS the activation energies of the defects were accurately deduced and the apparent capture cross section was calculated. The defect concentration was also quanti ed in the form of depth pro les plotted from the metal-semiconductor interface of the Schottky barrier diodes into the bandgap of the semiconductor. SEM, AFM and XRD were used to probe the changes in surface morphology and composition accompanying the processing steps whilst Raman spectroscopy was used to probe the nature of induced defects. Sputter deposition of tungsten on 4H-SiC was successfully used to induce the E0:69 which is the VSi. The identity of VSi was con rmed by thermal treatment and it annealed beyond detection at 600 C as expected. A previously unreported defect, the E0:29 was also observed after sputtering and was attributed to the heavy metal and gas ion residue from the deposition process. In order to transform the VSi into CSiVC, W/4H-SiC diodes were annealed up to 1100 C. This resulted in the formation of defects which were attributed to the interdi usion of silicides and carbides formed at the W/4H-SiC interface, as detected by XRD, migrating into the SiC. This was an unfavourable outcome for photonics applications where purity of the semiconductor is a major concern. As an alternative solution, the VSi was induced in 4H-SiC using 167 MeV, Xe26+ swift heavy ions. Xe is a noble gas therefore it would not react with the semiconductor. The structure and integrity of the lattice structure was conserved after irradiation as deduced from confocal Raman microscopy. The depth and concentration of the defects as observed in confocal Raman was consistent with SRIM simulations. AFM showed that the radiation introduced elongated protrusions on the surface of the semiconductor. The observations show that the silicon vacancy can be induced in 4H-SiC by standard industrial practices such as sputter deposition or ion irradiation.
