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EBookClubs

Read Books & Download eBooks Full Online

Book Exploitation of Pre stress Temperature Characterization for AlGaAs GaAs Microwave Power Heterojunction Bipolar Transistors

Download or read book Exploitation of Pre stress Temperature Characterization for AlGaAs GaAs Microwave Power Heterojunction Bipolar Transistors written by David C. Williamson and published by . This book was released on 1996 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Analysis of the Nonlinear Characteristics of Microwave Power Heterojunction Bipolar Transistors and Optoelectronic Integrated Circuits

Download or read book Analysis of the Nonlinear Characteristics of Microwave Power Heterojunction Bipolar Transistors and Optoelectronic Integrated Circuits written by Apostolos Samelis and published by . This book was released on 1996 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Characterization Modeling and Optimization of AlGaAs GaAs Heterojunction Bipolar Transistors

Download or read book Characterization Modeling and Optimization of AlGaAs GaAs Heterojunction Bipolar Transistors written by Madjid Hafizi-Esfahani and published by . This book was released on 1990 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Characterization of AlGaAs GaAs AlGaAs NpN Double Heterojunction Bipolar Transistors

Download or read book Characterization of AlGaAs GaAs AlGaAs NpN Double Heterojunction Bipolar Transistors written by Liu Guoxu and published by . This book was released on 1991 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Preparation and Characterization of a Zinc diffused AlGaAs GaAs Heterojunction Bipolar Transistor with Aluminum Contacts

Download or read book Preparation and Characterization of a Zinc diffused AlGaAs GaAs Heterojunction Bipolar Transistor with Aluminum Contacts written by Hasan Hüseyin Erkaya and published by . This book was released on 1988 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Microwave Noise Characterization and Modeling of InP Heterojunction Bipolar Transistors

Download or read book Microwave Noise Characterization and Modeling of InP Heterojunction Bipolar Transistors written by Yong Zhong Xiong and published by . This book was released on 2003 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book International Aerospace Abstracts

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1997 with total page 622 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Properties of Gallium Arsenide

Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.

Book Fabrication of GaAs Devices

Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.

Book Microwave Devices Circuits and Subsystems for Communications Engineering

Download or read book Microwave Devices Circuits and Subsystems for Communications Engineering written by Ian A. Glover and published by John Wiley & Sons. This book was released on 2006-05-01 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microwave Devices, Circuits and Subsystems for Communications Engineering provides a detailed treatment of the common microwave elements found in modern microwave communications systems. The treatment is thorough without being unnecessarily mathematical. The emphasis is on acquiring a conceptual understanding of the techniques and technologies discussed and the practical design criteria required to apply these in real engineering situations. Key topics addressed include: Microwave diode and transistor equivalent circuits Microwave transmission line technologies and microstrip design Network methods and s-parameter measurements Smith chart and related design techniques Broadband and low-noise amplifier design Mixer theory and design Microwave filter design Oscillators, synthesisers and phase locked loops Each chapter is written by specialists in their field and the whole is edited by experience authors whose expertise spans the fields of communications systems engineering and microwave circuit design. Microwave Devices, Circuits and Subsystems for Communications Engineering is suitable for senior electrical, electronic or telecommunications engineering undergraduate students, first year postgraduate students and experienced engineers seeking a conversion or refresher text. Includes a companion website featuring: Solutions to selected problems Electronic versions of the figures Sample chapter

Book Power GaN Devices

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Book VLSI Fabrication Principles

Download or read book VLSI Fabrication Principles written by Sorab K. Ghandhi and published by John Wiley & Sons. This book was released on 1994-03-31 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.