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Book Experiments in Gallium Arsenide Technology

Download or read book Experiments in Gallium Arsenide Technology written by Dave Prochnow and published by . This book was released on 1988-09-01 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Experiments in Gallium Arsenide Technology

Download or read book Experiments in Gallium Arsenide Technology written by D. J. Branning and published by . This book was released on 1988 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: Suggests experiments featuring the technology used to produce computer chips

Book Gallium Arsenide Technology in Europe

Download or read book Gallium Arsenide Technology in Europe written by Joseph Mun and published by Springer. This book was released on 1994-05-27 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some of the key milestones in GaAs technology were ftrst demonstrated in Europe, for example, the ftrst GaAs Field Effect Transistor (FET) with microwave performance and the ftrst GaAs Microwave Monolithic Integrated Circuit (MMIC). The strategic nature of GaAs technology has attracted heavy investment from many vertically integrated companies in information technology, communication and defence, as well as from semiconductor manufacturers world wide. Europe always faced strong competition from the USA and Japan and until 1984, European GaAs activities were fragmented amongst various players, with some of the activities loosely grouped into national programmes. In 1984, a number of collaborative projects were established under the European Speciftc Programme on Information Technology (ESPRIT) which crossed national boundaries. It has launched a new and exciting phase for GaAs in Europe and few of those involved at the time could have imagined where such collaboration may lead. In the beginning of those early projects, collaboration was approached with caution and suspicion because after all, many members of a newly formed project team were previously competitors. However, common technology problems soon became apparent and the opportunity to discuss these problems with engineers and scientists from different backgrounds had quickly broken down all barriers. Today, collaboration has become an essential element in European R&D. Collaboration has strengthened the GaAs community and helped to accelerate its growth against difftcult times. This book examines the importance of GaAs technology in Europe and illustrates some of the recent activities pursued under various ESPRIT projects.

Book Gallium Arsenide

    Book Details:
  • Author : John Sydney Blakemore
  • Publisher : Springer Science & Business Media
  • Release : 1987
  • ISBN : 9780883185254
  • Pages : 422 pages

Download or read book Gallium Arsenide written by John Sydney Blakemore and published by Springer Science & Business Media. This book was released on 1987 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Experiments and Simulations of Gallium Arsenide Mesfet Sidegating Effects

Download or read book Experiments and Simulations of Gallium Arsenide Mesfet Sidegating Effects written by Yi Liu and published by . This book was released on 1994 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Gallium Arsenide Technology in Europe

Download or read book Gallium Arsenide Technology in Europe written by Joseph Mun and published by Springer. This book was released on 1994 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some of the key milestones in GaAs technology were ftrst demonstrated in Europe, for example, the ftrst GaAs Field Effect Transistor (FET) with microwave performance and the ftrst GaAs Microwave Monolithic Integrated Circuit (MMIC). The strategic nature of GaAs technology has attracted heavy investment from many vertically integrated companies in information technology, communication and defence, as well as from semiconductor manufacturers world wide. Europe always faced strong competition from the USA and Japan and until 1984, European GaAs activities were fragmented amongst various players, with some of the activities loosely grouped into national programmes. In 1984, a number of collaborative projects were established under the European Speciftc Programme on Information Technology (ESPRIT) which crossed national boundaries. It has launched a new and exciting phase for GaAs in Europe and few of those involved at the time could have imagined where such collaboration may lead. In the beginning of those early projects, collaboration was approached with caution and suspicion because after all, many members of a newly formed project team were previously competitors. However, common technology problems soon became apparent and the opportunity to discuss these problems with engineers and scientists from different backgrounds had quickly broken down all barriers. Today, collaboration has become an essential element in European R&D. Collaboration has strengthened the GaAs community and helped to accelerate its growth against difftcult times. This book examines the importance of GaAs technology in Europe and illustrates some of the recent activities pursued under various ESPRIT projects.

Book Gallium Arsenide IC Applications Handbook

Download or read book Gallium Arsenide IC Applications Handbook written by and published by Elsevier. This book was released on 1995-09-27 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide IC Applications Handbook is the first text to offer a comprehensive treatment of Gallium Arsenide (GaAs) integrated chip (IC) applications, specifically in microwave systems. The books coverage of GaAs in microwave monolithic ICs demonstrates why GaAs is being hailed as a material of the future for the various advantages it holds over silicon. This volume provides scientists, physicists, electrical engineers, and technology professionals and managers working on microwave technology with practical information on GaAs applications in radar, electronic warfare, communications, consumer electronics, automotive electronics and traffic control. Includes an executive summary in each volume and chapter Facilitates comprehension with its tutorial writing style Covers key technical issues Emphasizes practical aspects of the technology Contains minimal mathematics Provides a complete reference list

Book Final Report on Gallium Arsenide Dendrite Single Crystal Program

Download or read book Final Report on Gallium Arsenide Dendrite Single Crystal Program written by and published by . This book was released on 1964 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: The results of experiments on dendritic and web growth of gallium arsenide are described and discussed. Solar cell fabrication processes have been developed which are ideally suited to webbed starting material. A solar cell made on gallium arsenide multi-dendrite web was comparable to those made on Czochralski crystal slices. GaAs has been epitaxially grown on Ge web.

Book Gallium Arsenide Technology

Download or read book Gallium Arsenide Technology written by David K. Ferry and published by Sams Technical Publishing. This book was released on 1985 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Radiative Properties of Semiconductors

Download or read book Radiative Properties of Semiconductors written by N.M. Ravindra and published by Morgan & Claypool Publishers. This book was released on 2017-08-21 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optical properties, particularly in the infrared range of wavelengths, continue to be of enormous interest to both material scientists and device engineers. The need for the development of standards for data of optical properties in the infrared range of wavelengths is very timely considering the on-going transition of nano-technology from fundamental R&D to manufacturing. Radiative properties play a critical role in the processing, process control and manufacturing of semiconductor materials, devices, circuits and systems. The design and implementation of real-time process control methods in manufacturing requires the knowledge of the radiative properties of materials. Sensors and imagers operate on the basis of the radiative properties of materials. This book reviews the optical properties of various semiconductors in the infrared range of wavelengths. Theoretical and experimental studies of the radiative properties of semiconductors are presented. Previous studies, potential applications and future developments are outlined. In Chapter 1, an introduction to the radiative properties is presented. Examples of instrumentation for measurements of the radiative properties is described in Chapter 2. In Chapters 3-11, case studies of the radiative properties of several semiconductors are elucidated. The modeling and applications of these properties are explained in Chapters 12 and 13, respectively. In Chapter 14, examples of the global infrastructure for these measurements are illustrated.

Book Properties of Gallium Arsenide

Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.

Book Vacancy Defects in Gallium Arsenide

Download or read book Vacancy Defects in Gallium Arsenide written by Rebecca Dora Mih and published by . This book was released on 1994 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Gallium Arsenide  Electronics Materials and Devices  A Strategic Study of Markets  Technologies and Companies Worldwide 1999 2004

Download or read book Gallium Arsenide Electronics Materials and Devices A Strategic Study of Markets Technologies and Companies Worldwide 1999 2004 written by R. Szweda and published by Elsevier. This book was released on 2000-12-05 with total page 429 pages. Available in PDF, EPUB and Kindle. Book excerpt: The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology. The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Book Techniques for Experimental Fabrication of a 1 watt  1gc Gallium Arsenide Transistor

Download or read book Techniques for Experimental Fabrication of a 1 watt 1gc Gallium Arsenide Transistor written by Melvin Belasco and published by . This book was released on 1965 with total page 155 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fabrication technologies needed to achieve n-p-n GaAs transistor performance, such as emitter formation and base diffusion, were investigated. Initially, Mg-Mn was used to produce p-type base layers, and a Sn pellet was used to form an alloyed emitter. Adding small amounts of In to the Sn improved device performance. To make a stripe geometry transistor, one adaptable to widely varying geometries, several combination of Sn, Ge, Au, and Al were investigated as emitter materials. One, Sn-Al(2%), was used almost exclusively in the standard transistor process. Both two-stripe and three-stripe GaAs transistors were made during the period of this contract, using Mg-Mn diffused based layers that had been reduced in thickness by an etching procedure. A method of diffusing Zn into GaAs to produce uniform base layers reproducibly was developed using techniques for sputtering both SiO2 and Zn. To determine the importance of various process parameters, theoretical studies were made of various device structures to predict their characteristics. Intensive studies were also made of the electro-optical properties of the GaAs used in this program in an attempt to determine material characteristics, such as diffusion lengths and impurity levels, that could be related to transistor performance.

Book Gallium Arsenide and Related Compounds

Download or read book Gallium Arsenide and Related Compounds written by J. Ludwig and published by World Scientific Publishing Company Incorporated. This book was released on 1995-09 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: