Download or read book Experimental Study and Kinetic Modelling of Chemical Vapor Deposition Process of Silicon Oxide and Oxynitride Thin Films for Aqueous Corrosion Barriers written by Konstantina Christina Topka (docteur en génie des procédés).) and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The deposition of silica-based materials is widely used in numerous industrial sectors, including microelectronics, food packaging, gas separation and pharmaceutics. Depending on the targetapplication, these materials are required to fulfil specific requirements in terms of mechanical properties, durability, and composition. The implementation of such coatings in pharmaceutics applications require, more specifically, good aqueous barrier and anti-diffusion properties, as well as effective corrosion resistance. The hydrolytic resistance and the durability of the coatings is directly linked to the level of densification of the ceramic network. In the case of amorphous SiO2, an improved network cross-linking, and by consequence densification, can be induced through the partial replacement of the O2- anions by N3- (or C4-) ones, producing denser amorphous silicon oxynitride (SiOxNy) or silicon oxycarbide (SiOxCy) coatings that can meet the performance requirements dictated by the various pharmaceutical applications. However, very little information is available in the literature concerning the deposition of SiOxNy coatings in accordance to the application-specific constraints: namely the production of chemically inert films on complex, 3D substrates, deposited at atmospheric pressure and at moderate temperatures (
Download or read book Proceedings of the Thirteenth International Conference on Chemical Vapor Deposition written by Theodore M. Besmann and published by The Electrochemical Society. This book was released on 1996 with total page 922 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposition written by Jong-Hee Park and published by ASM International. This book was released on 2001 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Chemical Vapor Deposition written by Hugh O. Pierson and published by William Andrew. This book was released on 2012-12-02 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Chemical Vapor Deposition: Principles, Technology and Applications provides information pertinent to the fundamental aspects of chemical vapor deposition. This book discusses the applications of chemical vapor deposition, which is a relatively flexible technology that can accommodate many variations. Organized into 12 chapters, this book begins with an overview of the theoretical examination of the chemical vapor deposition process. This text then describes the major chemical reactions and reviews the chemical vapor deposition systems and equipment used in research and production. Other chapters consider the materials deposited by chemical vapor deposition. This book discusses as well the potential applications of chemical vapor deposition in semiconductors and electronics. The final chapter deals with ion implantation as a major process in the fabrication of semiconductors. This book is a valuable resource for scientists, engineers, and students. Production and marketing managers and suppliers of equipment, materials, and services will also find this book useful.
Download or read book Mathematical Modeling of Chemical Vapor Deposition Processes and Its Application to Thin Film Technology written by Norman Washington Loney and published by . This book was released on 1991 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: A number of workers in the field of Chemical vapor deposition (CVD) have presented mathematical models in the literature. Some workers were able to produce analytical expressions for the interwafer concentration profile. These analytical expressions were based entirely on zero or first order chemical reaction rates. Until now, it appears that a chemical reaction rate expression that is not zero or first order directly, must be handled by a numerical scheme. Presented herein is a mathematical model with an analytical interwafer concentration profile. This concentration profile is neither zero nor first order but shifts from zero to first order as the reactor is axially traversed. The approach used avoids the sometimes cumbersome numerical schemes, while dealing effectively with non-integer order rate expressions characteristic to CVD kinetics. This approach is also amenable to higher order rate expressions such as kCn, n> 1. We employ a boundary perturbation technique to reduce a nonlinear system of partial differential equations that was otherwise non-tractable analytically. Essentially, analytical expressions are derivable for the concentration profile in the interwafer region regardless of the kinetic expression's non-linearity. The proposed model was tested with independently published experimental data. In each case the model predictions compare favorable with the experimental data. Results show that deposition rates of: silicon nitride from dichlorosilane and ammonia, silicon from silane and silicon dioxide from tetraethylorthosilicate can be explained using a shifting order reaction. Further, the neglect of gas phase reactions did not affect the predicted deposition rates. Concurrence with experimental results on thickness uniformity (radial) is achieved using this model. Control of nonuniformity on the wafers during a CVD process depends on the magnitude of the Sherwood number. Both experimental data and the proposed model show that surface uniformity improves with diminishing Sherwood numbers. In this work, it is demonstrated (at least qualitatively) that surface chemical reaction provides the controlling resistance. For the range of concentrations and low pressures used in CVD the interwafer Damkzh̲ler number is smaller than unity. If the ratio of reaction velocity to diffusion velocity is larger than unity, uniform surface deposition cannot be expected. This implies the surface process is controlling.
Download or read book Chemical Vapor Deposition written by Electrochemical Society. High Temperature Materials Division and published by The Electrochemical Society. This book was released on 1997 with total page 1686 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Detailed Kinetic Modeling of the Chemical Vapor Deposition of Silicon Dioxide and Tin Oxide Films written by Carmen Joseph Giunta and published by . This book was released on 1988 with total page 209 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advances in Chemical Vapor Deposition written by Dimitra Vernardou and published by MDPI. This book was released on 2021-01-15 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pursuing a scalable production methodology for materials and advancing it from the laboratory to industry is beneficial to novel daily-life applications. From this perspective, chemical vapor deposition (CVD) offers a compromise between efficiency, controllability, tunability and excellent run-to-run repeatability in the coverage of monolayers on substrates. Hence, CVD meets all of the requirements for industrialization in basically all areas, including polymer coatings, metals, water-filtration systems, solar cells and so on. The Special Issue “Advances in Chemical Vapor Deposition” is dedicated to providing an overview of the latest experimental findings and identifying the growth parameters and characteristics of perovskites, TiO2, Al2O3, VO2 and V2O5 with desired qualities for potentially useful devices.
Download or read book Chemical Vapor Deposition written by John Milton Blocher and published by . This book was released on 1970 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ultrahigh Vacuum Metalorganic Chemical Vapor Deposition and in Situ Characterization of Nanoscale Titanium Dioxide Films written by Polly Wanda Chu and published by . This book was released on 1994 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin titanium dioxide films were produced by metalorganic chemical vapor deposition on sapphire(0001) in an ultrahigh vacuum (UHV) chamber. A method was developed for producing controlled submonolayer depositions from titanium isopropoxide precursor. Film thickness ranged from 0.1 to 2.7 nm. In situ X-ray photoelectron spectroscopy (XPS) was used to determine film stoichiometry with increasing thickness. The effect of isothermal annealing on desorption was evaluated. Photoelectron peak shapes and positions from the initial monolayers were analyzed for evidence of interface reaction. Deposition from titanium isopropoxide is divided into two regimes: depositions below and above the pyrolysis temperature. This temperature was determined to be 300 deg C. Controlled submonolayers of titanium oxide were produced by cycles of dosing with titanium isopropoxide vapor below and annealing above 300 deg C. Precursor adsorption below the pyrolysis temperature was observed to saturate after 15 minutes of dosing. The quantity absorbed was shown to have an upper limit of one monolayer. The stoichiometry of thin films grown by the cycling method were determined to be TiO2. Titanium dioxide film stoichiometry was unaffected by isothermal annealing at 700 deg C. Annealing produced a decrease in film thickness. This was explained as due to desorption. Desorption ceased at approximately 2.5 to 3 monolayers, suggesting bonding of the initial monolayers of film to sapphire is stronger than to itself. Evidence of sapphire reduction at the interface by the depositions was not observed. The XPS O is peak shifted with increased film thickness. The shifts were consistent with oxygen in sapphire and titanium dioxide having different O is photoelectron peak positions. Simulations showed the total shifts for thin films ranging in thickness of 0.1 to 2.7 nm to be -0.99 to -1.23 eV. Thick films were produced for comparison.
Download or read book Chemical Vapor Deposition for Microelectronics written by Arthur Sherman and published by William Andrew. This book was released on 1987 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents an extensive, comprehensive study of chemical vapor deposition (CVD). Understanding CVD requires knowledge of fluid mechanics, plasma physics, chemical thermodynamics, and kinetics as well as homogenous and heterogeneous chemical reactions. This text presents these aspects of CVD in an integrated fashion, and also reviews films for use in integrated circuit technology.
Download or read book Chemical Vapor Deposition written by S Neralla and published by BoD – Books on Demand. This book was released on 2016-08-31 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an overview of chemical vapor deposition (CVD) methods and recent advances in developing novel materials for application in various fields. CVD has now evolved into the most widely used technique for growth of thin films in electronics industry. Several books on CVD methods have emerged in the past, and thus the scope of this book goes beyond providing fundamentals of the CVD process. Some of the chapters included highlight current limitations in the CVD methods and offer alternatives in developing coatings through overcoming these limitations.
Download or read book Modelling and Experimental Study of Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride Films written by Chue-san Yoo and published by . This book was released on 1988 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Vapor Deposition Studies of Titanium silicon nitride Thin Films for Use as Diffusion Barriers written by Edward Thomas Norton (Jr.) and published by . This book was released on 1997 with total page 66 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Thin Film Chemical Vapor Deposition in Electronics written by Vladislav I︠U︡rʹevich Vasilʹev and published by Nova Science Publishers. This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is a summary of equipment, methodology and thin film growth experience obtained by the author during his 30 years of research work in the field of Integrated Circuit (IC) device technology. The monograph is concerned with the analysis of different aspects of different types of inorganic thin films grown by Chemical Vapor Deposition (CVD) methods and dedicated to the use in IC technology and production. The author discusses the methodology issues of thin film CVD and the fundamentals of the chemical kinetics of thin film growth. The main core of this monograph is the analysis of thin film CVD kinetics features obtained using different types of reactors, chemical compounds, process conditions. The monograph covers a wide variety of CVD-related aspects: equipment analysis, chemical compound features, CVD process methodology analysis, CVD kinetic features and their quantitative characterization, implementation of obtained numerical equations for thin film step coverage and gap-fill issues, interrelation of the film properties and CVD process features, and CVD process classification. The author would like to highlight that all the data presented in this book has been experimentally obtained by a number of research groups. Most of the data has been double-checked and confirmed. Surely, some data could not be repeated because it was obtained a long time ago using some specific deposition tools and processes. Nevertheless, the author would like to stress that he considers this book as an attempt to create a whole view on the thin film CVD for IC device technology applications. In this regard, the author has tried to generalize a large amount of experimental data, selecting the most common features of the film growth, composition, structure, and properties.
Download or read book Modeling of Chemical Vapor Deposition of Tungsten Films written by Chris R. Kleijn and published by Birkhauser. This book was released on 1993 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.
Download or read book Surface Modeling of Thin Film Growth written by Hee-Chuen Cho and published by . This book was released on 1993 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt:
