Download or read book Evaluation of a Low Energy Ion Implantation System written by Donald DeForrest Talada (2LT, USAF.) and published by . This book was released on 1974 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Evaluation of a Low Energy Ion Implantation System written by Donald D. Talada and published by . This book was released on 1974 with total page 77 pages. Available in PDF, EPUB and Kindle. Book excerpt: A machine which was originally designed as a sputtering apparatus and redesigned for use as an ion implantation system, was modified, and used to implant N(+) into p-type silicon at low energy (24 keV). Electrical characteristics of the resulting implanted layer were determined by Hall effect measurements using the van der Pauw technique. A second implantation of N(+) into p-type silicon was done at higher energy (145 keV) using the system at the Aerospace Research Laboratories. The electrical characteristics of the resulting implanted layer, determined by conventional Hall effect measurements, were found to be comparable to those of the low energy implant. In addition, the possibility of using the low energy machine to implant boron and phosphorus was investigated. (Modified author abstract).
Download or read book Ion Implantation written by Ishaq Ahmad and published by BoD – Books on Demand. This book was released on 2017-06-14 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.
Download or read book An Evaluation of High Energy Ion Implantation for Wear Studies written by Todd L. Rachel and published by . This book was released on 1991 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Range and Energy Deposition Distributions written by K. Bruce Winterbon and published by Springer. This book was released on 1975-09-14 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present level of understanding of ion implantation is sufficient that implantation Ls being used not only as a tool in various fields of research, but also as an industrial )rocess. In these applications one uses either the implanted ions, or their energy, to nodify some properties of the target substance, and is therefore concerned with the spatial listribution of the ions or of their energy. Following the pioneering work of Bohr [1), ~indhard and his collaborators have evolved a general description of the behaviour of swift Lons slowing down in amorphous targets [2,3,4), a description which has been the basis of nuch other work in the field. Various approximate calculations have been based on this :heory, but it has not always been clear whether any disagreement between experiment and :heory is real or can be attributed to deficiencies in calculation. It is the purpose of :his volume to present the results of the Lindhard theory, calculated in an exact manner, :o serve as a guide to the users of implantation, as a tabulation of theoretical results for experimentalists to compare with, and as a statement of the theoretical results either ~s a standard for comparison for approximate calculations or as a starting point for a more ietailed theory. Results are presented in tables and in graphs, the graphs being intended to display the qualitative features so as to illustrate the competition of the various phy sical processes determining the spatial distribution of the collision cascade.
Download or read book A Design and Evaluation of an Ion Implantation System written by Stephen P. Plusch (1LT, USCG.) and published by . This book was released on 1970 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Range and Energy Deposition Distributions written by K. Bruce Winterbon and published by Springer. This book was released on 2013-10-22 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present level of understanding of ion implantation is sufficient that implantation Ls being used not only as a tool in various fields of research, but also as an industrial )rocess. In these applications one uses either the implanted ions, or their energy, to nodify some properties of the target substance, and is therefore concerned with the spatial listribution of the ions or of their energy. Following the pioneering work of Bohr [1), ~indhard and his collaborators have evolved a general description of the behaviour of swift Lons slowing down in amorphous targets [2,3,4), a description which has been the basis of nuch other work in the field. Various approximate calculations have been based on this :heory, but it has not always been clear whether any disagreement between experiment and :heory is real or can be attributed to deficiencies in calculation. It is the purpose of :his volume to present the results of the Lindhard theory, calculated in an exact manner, :o serve as a guide to the users of implantation, as a tabulation of theoretical results for experimentalists to compare with, and as a statement of the theoretical results either ~s a standard for comparison for approximate calculations or as a starting point for a more ietailed theory. Results are presented in tables and in graphs, the graphs being intended to display the qualitative features so as to illustrate the competition of the various phy sical processes determining the spatial distribution of the collision cascade.
Download or read book Ion Implantation Technology 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Download or read book A DESIGN AND EVALUATION OF AN ION IMPLANTATION SYSTEM written by and published by . This book was released on 1970 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt: A machine originally designed as a bakeable, monoenergetic sputtering apparatus was redesigned for use as an ion implantation system. Engineering modifications produced a virtually oil-free high-vacuum system. The base pressure of the system (unbaked) in its present configuration is 1 x 10 to the minus 8th power Torr. A 0.8-microamperes, 6.5-keV nitrogen ion beam was obtained. The machine, after modifications, was studied to determine its feasibility as an ion implantation system. If beam voltages greater than 10 kV are used, the machine will be suitable to perform small-area implants (areas approximately equal to 0.5 sqcm) with dopants available in gaseous form (non-corrosive) ranging in energy from 10 to 30 keV.
Download or read book Ion Implantation Science and Technology written by J.F. Ziegler and published by Elsevier. This book was released on 2012-12-02 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
Download or read book Ion solid Interactions written by Walter M. Gibson and published by . This book was released on 1980 with total page 726 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Beams in Materials Processing and Analysis written by Bernd Schmidt and published by Springer Science & Business Media. This book was released on 2012-12-13 with total page 425 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
Download or read book Low Energy Ion Implantation of Silicon written by and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Use of low energy ion implantation for achieving ultra shallow junctions written by Akif Sultan and published by . This book was released on 1996 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ion Implantation Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Download or read book Low energy ion implantation simulation using a time integration scattering model written by Borna Josip Obradovic and published by . This book was released on 1996 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Operation of Low Energy Ion Implanters for Si N C Ion Implantation Into Silicon and Glassy Carbon written by D. A. Carder and published by . This book was released on 2009 with total page 76 pages. Available in PDF, EPUB and Kindle. Book excerpt:
