Download or read book Etude de la d gradation par porteurs chauds des technologies CMOS avanc es en fonctionnement statique et dynamique written by Chloé Guérin and published by . This book was released on 2008 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: La miniaturisation des dernières technologies s'est effectuée à tension d'alimentation quasi constante. Cela se traduit par une augmentation du champ latéral du transistor MOSFET. Un risque important réapparaît en terme de fiabilité : la dégradation par porteurs chauds (HC). Pour garantir le meilleur compromis entre fiabilité et performance, il est important de comprendre toutes les causes physiques de la dégradation par porteurs chauds. Grâce à une étude menée pour des conditions de polarisation et de température variées, sur différentes épaisseurs d'oxyde et longueurs de canal, nous avons mis en place un formalisme physique s'appuyant à la fois sur l'énergie et le nombre de porteurs. Cette double dépendance se traduit par une compétition entre trois modes de dégradations, dominant chacun à leur tour en fonction de la gamme d'énergie des porteurs. A forte énergie, la dégradation s'explique par l'interaction d'un seul porteur avec une liaison Si-H (mode 1). Mais quand l'énergie des porteurs diminue, leur nombre est prépondérant tout d'abord pour l'interaction entre porteurs EES (mode 2) et surtout à très basse énergie, où nous avons montré que la dégradation peut être importante à cause d'interactions multiples entre les "porteurs froids" du canal et les liaisons d'interface (mode 3). On parle alors d'excitation multivibrationnelle des liaisons. Ce nouveau modèle assure une meilleure extrapolation de la durée de vie dans les conditions nominales. Appliqué à la dégradation sous signaux digitaux, il permet une estimation rigoureuse du rapport entre les dégradations en courant alternatif et continu (AC-DC) ainsi que l'élaboration de nouvelles consignes concernant les effets de fréquence, de charge et de temps de montée des signaux. Enfin, intégré au simulateur de Design-in Reliability, il autorise une simulation précise de la dégradation par porteurs chauds de blocs de circuits.

Download or read book Etude de la fiabilit des technologies CMOS avanc es depuis la cr ation des d fauts jusqu la d gradation des transistors written by Yoann Mamy Randriamihaja and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: L'étude de la fiabilité représente un enjeu majeur de la qualification des technologies de l'industrie de la microélectronique. Elle est traditionnellement étudiée en suivant la dégradation des paramètres des transistors au cours du temps, qui sert ensuite à construire des modèles physiques expliquant le vieillissement des transistors. Nous avons fait le choix dans ces travaux d'étudier la fiabilité des transistors à l'échelle microscopique, en nous intéressant aux mécanismes de ruptures de liaisons atomiques à l'origine de la création des défauts de l'oxyde de grille. Nous avons tout d'abord identifié la nature des défauts et modéliser leurs dynamiques de capture de charges afin de pouvoir reproduire leur impact sur des mesures électriques complexes. Cela nous a permis de développer une nouvelle méthodologie de localisation des défauts, le long de l'interface Si-SiO2, ainsi que dans le volume de l'oxyde. La mesure des dynamiques de créations de défauts pour des stress de type porteurs chauds et menant au claquage de l'oxyde de grille nous a permis de développer des modèles de dégradation de l'oxyde, prédisant les profils de défauts créés à l'interface et dans le volume de l'oxyde. Nous avons enfin établi un lien précis entre l'impact de la dégradation d'un transistor sur la perte de fonctionnalité d'un circuit représentatif du fonctionnement d'un produit digital.L'étude et la modélisation de la fiabilité à l'échelle microscopique permet d'avoir des modèles plus physiques, offrant ainsi une plus grande confiance dans les extrapolations de durées de vie des transistors et des produits.

Download or read book Contribution la simulation en conception des effets des porteurs chauds sur la fiabilit des circuits analogiques CMOS written by Bernard Bordonado and published by . This book was released on 1996 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt: CETTE ETUDE EST CONSACREE AU DEVELOPPEMENT D'UN NOUVEAU FLUX DE SIMULATION POUR AMELIORER DES LA PHASE DE CONCEPTION LA FIABILITE AUX EFFETS DES PORTEURS CHAUDS DES CIRCUITS ANALOGIQUES CMOS, ET CE INDEPENDAMMENT DES SPECIFICITES DE LA TECHNOLOGIE UTILISEE. LA METHODE PROPOSEE D'AMELIORATION QUALITATIVE AVANT FONDERIE DE LA FIABILITE AUX PORTEURS CHAUDS REPOSE SUR LA POSSIBILITE DE SIMULER LA DUREE DE VIE D'UN CIRCUIT FONCTIONNEL COMPLEXE A PARTIR DE DONNEES DE VIEILLISSEMENT EXTRAITES SUR DES STRUCTURES DE TEST FONDAMENTALES. CETTE NOUVELLE METHODOLOGIE ENGLOBE ET ETEND LES CONNAISSANCES DEJA ACQUISES SUR LE SUJET DANS LE DOMAINE DES CIRCUITS NUMERIQUES. UNE ETUDE THEORIQUE ET EXPERIMENTALE APPROFONDIE A ETE MENEE SUR DES OSCILLATEURS EN ANNEAUX ET DES AMPLIFICATEURS OPERATIONNELS, CIRCUITS ELEMENTAIRES DE L'ELECTRONIQUE ANALOGIQUE. PLUSIEURS PROTOTYPES DE COMPLEXITES ET DE FONCTIONNALITES DIVERSES ONT ETE CONCUS, REALISES, TESTES, VIEILLIS ELECTRIQUEMENT ET SIMULES POUR LE DEVELOPPEMENT ET LA VALIDATION DE CE FLUX

Download or read book Etude de la fiabilit des technologies CMOS avanc es written by Chittoor Ranganathan Parthasarathy and published by . This book was released on 2006 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dans ce travail, nous examinons les aspects de la dégradation des dispositifs MOSFETs dus aux porteurs chauds du canal(CHC) et aux instabilités à haute température sous polarisation négative (NBTI), du point de vue de la caractérisation et de la modélisation, dans l'objectif de développer des solutions largement utilisables pour simuler ces conditions de dégradation dans les circuits analogiques et numériques. De telles solutions représentent un besoin pressant dans le contexte de la miniaturisation extrême des dispositifs CMOS et devant la complexité croissante des produits utilisant ces dispositifs, nécessitant l'évaluation de leur fiabilité lors des étapes de conception des circuits. Ce travail s'adresse aux technologies CMOS actuelles des nœuds 65nm et 90nm présentant des transistors NMOS et PMOS avec des épaisseurs d'oxyde de grille de 1.3nm à 6.5nm. Nous avons proposé une méthodologie robuste pour extraire la dégradation des paramètres des transistors soumis à la dégradation NBTI et caractérisée par une nouvelle technique à la volée dite "On-The-Fly"(OTF), avec laquelle les mesures sont effectuées sans interrompre le stress. Nous avons étudié le phénomène de guérison partielle de la dégradation ou "recovery", qui est une des caractéristiques clés du NBTI comme au cours de certaines conditions de dégradations CHC. Nous avons proposé une nouvelle méthode de caractérisation de la dégradation en combinant des trains de polarisations de stress ou patterns" avec la technique OTF. Nous avons soumis les dispositifs à de multiples combinaisons de polarisations NBTI, NBTI et CHC, CHC et nous avons utilisé cette technique sur les transistors PMOS et NMOS à canal court et canal long. Cette méthode permet l'observation et la modélisation des caractéristiques de la dégradation NBTI et CHC dans une perspective unifiée qui éclaire la compréhension des mécanismes de dégradation dans les dispositifs impliquant le recovery. Nous avons proposé un modèle complet pour la dégradation NBTI. Ce modèle inclut précisément la dégradation NBTI et les dynamiques du recovery aussi bien que les différents constituants des composantes de la dégradation. L'effet de la commutation des signaux caractérisés par la fréquence, le rapport cyclique en phase NBTI et l'amplitude du signal ont été analysés et inclus dans le modèle. Le modèle est complété en formulant les paramètres en modèle SPICE (BSIM4) nécessaires à la représentation des dispositifs dégradés par le NBTI. La caractérisation et la modélisation de la dégradation CHC suivent le modèle standard des électrons chanceux ou Lucky-Electron Model où l'évaluation de la dégradation est associée au courant substrat. Nous proposons une amélioration de ce modèle en courant substrat pour pouvoir ajuster les résultats sur un grand intervalle en Vds et Vgs, pour différentes familles de dispositifs NMOS. Nous avons également incorporé à la modélisation et à la simulation des dégradations anormales observées sous dégradation CHC dans des familles de dispositifs à oxyde de grille épais. Nous décrivons le développement d'une méthodologie de simulation, mettant en lumière ses différents aspects fondamentaux. Nous incorporons dans les modèles du simulateur les différents modes de dégradation décrits ci-dessus et montrons les bons accords entre les simulations et les mesures sur silicium. Par la suite, nous étendons l'analyse aux circuits digitaux et analogiques. De nombreuses classes de circuits de plus en plus complexes ont été analysées de l'inverseur à la PLL et au convertisseur ADC, utilisant les modèles et la méthodologie de simulation développée. Cette méthodologie tout au long de ce travail forme la première pierre pour traiter les phénomènes de dégradation dans les dispositifs des générations technologiques actuelles, autant que les bases nécessaires à l'évaluation de la fiabilité des circuits en fonctionnement réel qui sont soumis à l interaction entre les diverses polarisations de stress.

Download or read book TOF Range Imaging Cameras written by Fabio Remondino and published by Springer Science & Business Media. This book was released on 2013-04-09 with total page 243 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today the cost of solid-state two-dimensional imagers has dramatically dropped, introducing low cost systems on the market suitable for a variety of applications, including both industrial and consumer products. However, these systems can capture only a two-dimensional projection (2D), or intensity map, of the scene under observation, losing a variable of paramount importance, i.e., the arrival time of the impinging photons. Time-Of-Flight (TOF) Range-Imaging (TOF) is an emerging sensor technology able to deliver, at the same time, depth and intensity maps of the scene under observation. Featuring different sensor resolutions, RIM cameras serve a wide community with a lot of applications like monitoring, architecture, life sciences, robotics, etc. This book will bring together experts from the sensor and metrology side in order to collect the state-of-art researchers in these fields working with RIM cameras. All the aspects in the acquisition and processing chain will be addressed, from recent updates concerning the photo-detectors, to the analysis of the calibration techniques, giving also a perspective onto new applications domains.

Download or read book Junctionless Field Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-01-28 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

Download or read book Critical Technologies Plan written by and published by . This book was released on 1989 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Download or read book Tunnel Field effect Transistors TFET written by Jagadesh Kumar Mamidala and published by John Wiley & Sons. This book was released on 2016-09-27 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.

Download or read book Advances in Photodiodes written by Gian-Franco Dalla Betta and published by BoD – Books on Demand. This book was released on 2011-03-22 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photodiodes, the simplest but most versatile optoelectronic devices, are currently used in a variety of applications, including vision systems, optical interconnects, optical storage systems, photometry, particle physics, medical imaging, etc. Advances in Photodiodes addresses the state-of-the-art, latest developments and new trends in the field, covering theoretical aspects, design and simulation issues, processing techniques, experimental results, and applications. Written by internationally renowned experts, with contributions from universities, research institutes and industries, the book is a valuable reference tool for students, scientists, engineers, and researchers.

Download or read book Single Photon Generation and Detection written by and published by Academic Press. This book was released on 2013-11-29 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single-photon generation and detection is at the forefront of modern optical physics research. This book is intended to provide a comprehensive overview of the current status of single-photon techniques and research methods in the spectral region from the visible to the infrared. The use of single photons, produced on demand with well-defined quantum properties, offers an unprecedented set of capabilities that are central to the new area of quantum information and are of revolutionary importance in areas that range from the traditional, such as high sensitivity detection for astronomy, remote sensing, and medical diagnostics, to the exotic, such as secretive surveillance and very long communication links for data transmission on interplanetary missions. The goal of this volume is to provide researchers with a comprehensive overview of the technology and techniques that are available to enable them to better design an experimental plan for its intended purpose. The book will be broken into chapters focused specifically on the development and capabilities of the available detectors and sources to allow a comparative understanding to be developed by the reader along with and idea of how the field is progressing and what can be expected in the near future. Along with this technology, we will include chapters devoted to the applications of this technology, which is in fact much of the driver for its development. This is set to become the go-to reference for this field. Covers all the basic aspects needed to perform single-photon experiments and serves as the first reference to any newcomer who would like to produce an experimental design that incorporates the latest techniques Provides a comprehensive overview of the current status of single-photon techniques and research methods in the spectral region from the visible to the infrared, thus giving broad background that should enable newcomers to the field to make rapid progress in gaining proficiency Written by leading experts in the field, among which, the leading Editor is recognized as having laid down the roadmap, thus providing the reader with an authenticated and reliable source

Download or read book Nanowire Transistors written by Jean-Pierre Colinge and published by Cambridge University Press. This book was released on 2016-04-21 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.

Download or read book Confronting Poverty in Iraq written by World Bank and published by World Bank Publications. This book was released on 2011-01-10 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report provides the most comprehensive and rigorous analysis of Iraqi income and expenditure in several decades. The report makes extensive use of the Iraq Household Socio-Economic Survey, the first nationwide income and expenditure survey since 1988. IHSES data is complemented income and expenditure data from a wide range of other measures of living standards, allowing us to analyze living standards in a holistic way. The analysis presented here was performed with two main goals first, to inform the Government s Poverty Reduction Strategy; and second, to serve as a baseline for future assessments of changes in living standards and the identification of critical issues for deeper examination. Iraqi living standards have two unusual characteristics. First, they have fallen over the past generation. Second, they feature surprisingly little inequality. These characteristics are both rooted in Iraq s recent history of authoritarian government, war, military occupation, insurgency, and civil strife leading to infrastructure destruction and population displacement. There have been few opportunities for individuals to prosper from professional or entrepreneurial activities. Decades of neglected investment have resulted in deterioration of social services and economic infrastructure. Consequently, individuals have lacked capabilities to prosper and an investment climate conducive to prosperity. School enrollment and life expectancy have declined. Extremely low returns to education reflect the combination of poor educational quality and lack of employment opportunities. In terms of economic infrastructure, access to reliable electricity and water, and even access to paved roads are low, are further reflections of decades of neglect. While the upper end of the distribution has been pulled down by a lack of opportunities, the lower end has been supported by direct government provision of food. The Public Distribution System (PDS) provides 85 percent of food needs. While PDS has been useful as a safety net for the poor and the vulnerable, the system is expensive, inefficient, and fiscally risky. Indeed, PDS food rations account for a far greater share of public spending than does education or health. Going forward, Iraq faces two main challenges. First, although Iraq does not have to develop from scratch, it faces a formidable challenge in re-development. Second, a shift by the Government is required from direct provision of basic subsistence toward investment in human capacities. The Government can provide an enabling environment through investments in economic infrastructure and services to business and citizens, thus allowing the population to make productive use of education and their own labor. Both challenges are now being taken up by the Poverty Reduction Strategy, which articulates a detailed set of required actions and outlines priorities for government spending.

Download or read book Into The Nano Era written by Howard Huff and published by Springer Science & Business Media. This book was released on 2008-09-14 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Even as we tentatively enter the nanotechnology era, we are now encountering the 50th anniversary of the invention of the IC. Will silicon continue to be the pre-eminent material and will Moore’s Law continue unabated, albeit in a broader economic venue, in the nanotechnology era? This monograph addresses these issues by a re-examination of the scientific and technological foundations of the micro-electronics era. It also features two visionary articles of Nobel laureates.

Download or read book Conceptual Modeling for Traditional and Spatio Temporal Applications written by Christine Parent and published by Springer Science & Business Media. This book was released on 2006-09-02 with total page 475 pages. Available in PDF, EPUB and Kindle. Book excerpt: From environmental management to land planning and geo-marketing, the number of application domains that may greatly benefit from using data enriched with spatio-temporal features is expanding very rapidly. This book shows that a conceptual design approach for spatio-temporal databases is both feasible and easy to apprehend. While providing a firm basis through extensive discussion of traditional data modeling concepts, the major focus of the book is on modeling spatial and temporal information.

Download or read book Real Time Digital Control Applications written by A. Alonso-Concheiro and published by Elsevier. This book was released on 2014-05-23 with total page 657 pages. Available in PDF, EPUB and Kindle. Book excerpt: Real Time Digital Control Applications is a compilation of papers presented at the Symposium on Real-Time Digital Control Applications, sponsored by the International Federation of Automatic Control (IFAC) and the International Federation for Information Processing (IFIP), held in Guadalajara, Mexico. The event is organized to provide developing countries with the opportunity to gain insights -- from the sharing of ideas and experiences of experts from around the world to the rapid growth and development of applications of real-time digital control systems, which is considered as the basis of industrial revolution. The book presents and discusses the various scientific, industrial, and technical applications of real-time digital control systems. Applications in power generation, water, metal processing, cement, food, and manufacturing industries are shown. The text also covers applications in robotics, biomedicine, monitoring and failure detection, fuel optimization and heat control, adaptive process control, modeling, and computer software. Industrial engineers, scientists, economists, computer scientists, robotics experts, planners, and technicians will find this book invaluable.

Download or read book Fundamentals of Human Computer Interaction written by Andrew F. Monk and published by Academic Press. This book was released on 2014-06-28 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Human-Computer Interaction aims to sensitize the systems designer to the problems faced by the user of an interactive system. The book grew out of a course entitled ""The User Interface: Human Factors for Computer-based Systems"" which has been run annually at the University of York since 1981. This course has been attended primarily by systems managers from the computer industry. The book is organized into three parts. Part One focuses on the user as processor of information with studies on visual perception; extracting information from printed and electronically presented text; and human memory. Part Two on the use of behavioral data includes studies on how and when to collect behavioral data; and statistical evaluation of behavioral data. Part Three deals with user interfaces. The chapters in this section cover topics such as work station design, user interface design, and speech communication. It is hoped that this book will be read by systems engineers and managers concerned with the design of interactive systems as well as graduate and undergraduate computer science students. The book is also suitable as a tutorial text for certain courses for students of Psychology and Ergonomics.