Download or read book ESSDERC 89 written by Anton Heuberger and published by Springer. This book was released on 1989-09 with total page 1004 pages. Available in PDF, EPUB and Kindle. Book excerpt: The conference ESSDERC '89 held in September 1989 in Berlin was concerned with the physics, electrical characteristics, reliability and processing of solid state devices and electronic materials. The proceedings contain all invited and contributed papers of the conference and thus becomes a state-of-the-art-report of solid state device research in Europe 1989.
Download or read book Esprit 89 written by CEC, DG for Telecommunications and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 1136 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 6th ESPRIT Conference is being held in Brussels from the 27th November to the 1 st December 1989. Well over 1500 participants from all over Europe are expected to attend the various events during the week. The Conference will offer the opportunity to be updated on the results of ongoing Esprit projects and to develop Europe-wide contacts with colleagues, both within a specific branch of Information Technology and across different branches. The first three days of the week are devoted to presentations of Esprit I projects, structured into plenary and parallel sessions; this year there is special emphasis on panels and workshops where participants can exchange ideas and hold in-depth discussions on specific topics. The different areas of Esprit work are covered: Microelectronics, Informa tion Processing Systems, Office and Business Systems, Computer Integrated Manufac turing, Basic Research and different aspects of the Information Exchange System. During the IT Forum on Thursday 30th November, major European industrial and political decision-makers will address the audience in the morning. In the afternoon, different aspects of Technology Transfer will be discussed with the participation of outside experts, and presentations on the future plans for community R&D in IT will take place.
Download or read book Silicon on Insulator Technology written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: 5. 2. Distinction between thick- and thin-film devices . . . . . . . . . . . . . . . . . . . . 109 5. 3. I-V Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112 5. 3. 1. Threshold voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2 5. 3 . 2. Body effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 8 5. 3. 3. Short-channel effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 5. 3. 4. Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 24 5. 4. Transconductance and mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 1 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 5. 4. 2. Mobility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5. 5. Subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132 5. 6. Impact ionization and high-field effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 5. 6. 1. Kink effecL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 39 5. 6. 2. Hot-electron degradation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143 5. 7. Parasitic bipolar effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145 5. 7. 1. Anomalous subthreshold slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 45 5. 7. 2. Reduced drain breakdown voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7 5. 8. Accumulation-mode p-channel MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 9 CHAPTER 6 - Other SOl Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 9 6. 1. Non-conventional devices adapted from bulk . . . . . . . . . . . . . . . . . . . . . . . . . . . 159 6. 1. 1. COMFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160 6. 1. 2. High-voltage lateral MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 6 1 6. 1. 3. PIN photodiode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162 6. 1. 4. JFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163 6. 2. Novel SOl devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 1. Lubistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164 6. 2. 2. Bipolar-MOS device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166 6. 2. 3. Double-gate MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 69 6. 2. 4. Bipolar transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 6. 2. 5. Optical modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 74 CHAPTER 7 - The sm MOSFET Operating in a Harsh Environment. . . . . . . . 1 77 7. 1. Radiation environment. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 7 7 7. 1. 1. SEU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178 7. 1. 2. Total dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180 7. 1. 3. Dose-rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 8 4 7. 2. High-temperature operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 85 7. 2. 1. Leakage currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Download or read book Device and Circuit Cryogenic Operation for Low Temperature Electronics written by Francis Balestra and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.
Download or read book High Energy and High Dose Ion Implantation written by S.U. Campisano and published by Elsevier. This book was released on 1992-06-16 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion beam processing is a means of producing both novel materials and structures. The contributions in this volume strongly focus on this aspect and include many papers reporting on the modification of the electrical and structural properties of the target materials, both metals and semiconductors, as well as the synthesis of buried and surface compound layers. Many examples on the applications of high energy and high dose ion implantation are also given. All of the papers from Symposia C and D are presented in this single volume because the interests of many of the participants span both topics. Additionally many of the materials science aspects, including experimental methods, equipment and processing problems, diagnostic and analytical techniques are common to both symposia.
Download or read book Proceedings of the Symposium on Automated Integrated Circuits Manufacturing written by and published by . This book was released on 1990 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings of the Fifth Symposium on Automated Integrated Circuits Manufacturing written by Vaughn E. Akins and published by . This book was released on 1990 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Surface Processing and Laser Assisted Chemistry written by E. Fogarassy and published by Elsevier. This book was released on 1990-12-01 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers in this volume cover all aspects of laser assisted surface processing ranging from the preparation of high-Tc superconducting layer structures to industrial laser applications for device fabrication. The topics presented give recent results in organometallic chemistry and laser photochemistry, and novel surface characterization techniques. The ability to control the surface morphology by digital deposition and etching shows one of the future directions for exciting applications of laser surface processing, some of which may apply UV and VUV excitation. The understanding of elementary proceses is essential for the design of novel deposition methods, with diamond CVD being an outstanding example. The high quality of these contributions once again demonstrates that the E-MRS is an efficient forum for interaction between research workers and industry.
Download or read book III V Microelectronics written by J.P. Nougier and published by Elsevier. This book was released on 2014-05-27 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental physics to modelling and technology, from materials to devices and circuits are reviewed. Containing contributions from European researchers of international repute this volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in III-V microelectronics.
Download or read book Semiconductor Laser Engineering Reliability and Diagnostics written by Peter W. Epperlein and published by John Wiley & Sons. This book was released on 2013-01-25 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performance- and reliability-impacting factors such as temperature, stress and material instabilities. Further key features include: practical design guidelines that consider also reliability related effects, key laser robustness factors, basic laser fabrication and packaging issues; detailed discussion of diagnostic investigations of diode lasers, the fundamentals of the applied approaches and techniques, many of them pioneered by the author to be fit-for-purpose and novel in the application; systematic insight into laser degradation modes such as catastrophic optical damage, and a wide range of technologies to increase the optical strength of diode lasers; coverage of basic concepts and techniques of laser reliability engineering with details on a standard commercial high power laser reliability test program. Semiconductor Laser Engineering, Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices. With invaluable practical advice, this new reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students.
Download or read book Semiconductors written by W.M. Jr. Coughran and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: This IMA Volume in Mathematics and its Applications SEMICONDUCTORS, PART II is based on the proceedings of the IMA summer program "Semiconductors." Our goal was to foster interaction in this interdisciplinary field which involves electrical engineers, computer scientists, semiconductor physicists and mathematicians, from both university and industry. In particular, the program was meant to encourage the participation of numerical and mathematical analysts with backgrounds in ordinary and partial differential equations, to help get them involved in the mathematical as pects of semiconductor models and circuits. We are grateful to W.M. Coughran, Jr., Julian Cole, Peter Lloyd, and Jacob White for helping Farouk Odeh organize this activity and trust that the proceedings will provide a fitting memorial to Farouk. We also take this opportunity to thank those agencies whose financial support made the program possible: the Air Force Office of Scientific Research, the Army Research Office, the National Science Foundation, and the Office of Naval Research. A vner Friedman Willard Miller, J r. Preface to Part II Semiconductor and integrated-circuit modeling are an important part of the high technology "chip" industry, whose high-performance, low-cost microprocessors and high-density memory designs form the basis for supercomputers, engineering work stations, laptop computers, and other modern information appliances. There are a variety of differential equation problems that must be solved to facilitate such mod eling.
Download or read book Insulating Films on Semiconductors 1991 Proceedings from the 7th Biennial European Conference written by W. Eccleston and published by CRC Press. This book was released on 1991-09-01 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Insulating Films on Semiconductors 1991 covers the fundamental aspects of the properties of dielectrics/semiconductor structures, the study of high field/hot electron/radiation induced phenomena, and the developments in measurement techniques for looking at interfaces and surfaces on semiconductor materials. The volume is written for researchers in physics, materials science, electronics, and electrical engineering.
Download or read book Design of System on a Chip written by Ricardo Reis and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Design of System on a Chip is the first of two volumes addressing the design challenges associated with new generations of the semiconductor technology. The various chapters are the compilations of tutorials presented at workshops in Brazil in the recent years by prominent authors from all over the world. In particular the first book deals with components and circuits. Device models have to satisfy the conditions to be computationally economical in addition to be accurate and to scale over various generations of technology. In addition the book addresses issues of the parasitic behavior of deep sub-micron components, such as parameter variations and sub-threshold effects. Furthermore various authors deal with items like mixed signal components and memories. We wind up with an exposition of the technology problems to be solved if our community wants to maintain the pace of the "International Technology Roadmap for Semiconductors" (ITRS).
Download or read book Fully Depleted SOI CMOS Circuits and Technology for Ultralow Power Applications written by Takayasu Sakurai and published by Springer Science & Business Media. This book was released on 2007-02-01 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully-depleted SOI CMOS Circuits and Technology for Ultralow-Power Applications addresses the problem of reducing the supply voltage of conventional circuits for ultralow-power operation and explains power-efficient MTCMOS circuit design for FD-SOI devices at a supply voltage of 0.5 V. The topics include the minimum required knowledge of the fabrication of SOI substrates; FD-SOI devices and the latest developments in device and process technologies; and ultralow-voltage circuits, such as digital circuits, analog/RF circuits, and DC-DC converters. Each ultra-low-power technique related to devices and circuits is fully explained using figures to help understanding.
Download or read book Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Vikram J. Kapoor and published by The Electrochemical Society. This book was released on 1994 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Low Temperature Technologies and Applications written by Md Salim Newaz Kazi and published by BoD – Books on Demand. This book was released on 2022-03-30 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book on low-temperature technology is a notable collection of different aspects of the technology and its application in varieties of research and practical engineering fields. It contains, sterilization and preservation techniques and their engineering and scientific characteristics. Ultra-low temperature refrigeration, the refrigerants, applications, and economic aspects are highlighted in this issue. The readers will find the low temperature, and vacuum systems for industrial applications. This book has given attention to global energy resources, conservation of energy, and alternative sources of energy for the application of low-temperature technologies.
