Download or read book EPR Studies on Quenched In Defects in Silicon written by Young Hoon Lee and published by . This book was released on 1979 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Intrinsic Point Defects Impurities and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Download or read book Defects and Radiation Effects in Semiconductors 1978 written by J. H. Albany and published by CRC Press. This book was released on 1979 with total page 604 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ionization Enhanced Migration of Radiation Produced Defects in Silicon written by G. D. Watkins and published by . This book was released on 1979 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: Evidence for ionization enhanced migration of radiation produced defects in silicon is reviewed. Detailed results from EPR and DLTS studies are presented for the lattice vacancy, interstitial boron, and interstitial aluminum. The implications of these results to the mystery of the low temperature migration of interstitial silicon are discussed. (Author).
Download or read book Deep level Defects in Silicon Studied by DLTS and EPR Spectroscopy written by Pham Nguyen Hai and published by . This book was released on 1997 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 1048 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Rapid Thermal Processing of Semiconductors written by Victor E. Borisenko and published by Springer Science & Business Media. This book was released on 2013-11-22 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Download or read book Aggregation Phenomena of Point Defects in Silicon written by Erhard Sirtl and published by . This book was released on 1983 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book An EPR and Endor Study on Defects in Silicon written by Eric Gerard Sieverts and published by . This book was released on 1947 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Early Stages of Oxygen Precipitation in Silicon written by R. Jones and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 535 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.
Download or read book Defects in Semiconductors II written by Subhash Mahajan and published by North Holland. This book was released on 1983 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metals Abstracts written by and published by . This book was released on 1983 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Fabrication written by Dinesh C. Gupta and published by ASTM International. This book was released on 1989 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book EPR Studies of Hydrogenated Amorphous Silicon written by Zhuoxing Luo and published by . This book was released on 1990 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Porous Semiconductors A Symposium Held in Memory of Vitali Parkhutik and Volker Lehmann written by P. Schmuki and published by The Electrochemical Society. This book was released on 2008-10 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a special issue of ECS Transactions published by ECS in memory of Volker Lehmann and Vitali Parkhutik, two key scientists in the field of porous semiconductors who recently passed away. Topics in this issue aim at a more detailed understanding of growth mechanisms and the physical and chemical properties of all types of porous semiconductors. The papers address research in the various sub-fields of porous semiconductors such as semiconductor electrochemistry, deposition into pores, matrix materials, optical spectroscopy and transdisciplinary approaches to the topic as well as work relevant to the formation of advanced materials such as, for example, porous silicon, matrix composites and nanoclusters and their applications such as chemical and biological sensors.
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 1416 pages. Available in PDF, EPUB and Kindle. Book excerpt:
