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Book III V Compound Semiconductors

Download or read book III V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2016-04-19 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more

Book Selective Area Growth and Characterization of GaN Based Nanostructures by Metal Organic Vapor Phase Epitaxy

Download or read book Selective Area Growth and Characterization of GaN Based Nanostructures by Metal Organic Vapor Phase Epitaxy written by Wui Hean Goh and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this project is to establish a new technology to grow high quality GaN based material by nano selective area growth (NSAG). The motivation is to overcome the limit of the conventional growth method, which yield a high density of dislocation in the epitaxial layer. A low dislocation density in the epitaxial layer is crucial for high performance and high efficiency devices. This project focuses on growth and material characterization of GaN based nanostructures (nanodots and nanostripes) grown using the NSAG method that we developed. NSAG, with a precise control of diameter and position of nanostructures opens the door to new applications such as: 1) single photon source, 2) photonic crystal, 3) coalescence of high quality GaN template, and 4) novel nanodevices.

Book GaN on ZnO

Download or read book GaN on ZnO written by Nola Li and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the research was to develop high quality GaN epitaxial growth on alternative substrates that could result in higher external quantum efficiency devices. Typical GaN growth on sapphire results in high defect materials, typically 101́ı1́"℗£1́ʻcm1́"℗ø, due to a large difference in lattice mismatch and thermal expansion coefficient. Therefore, it is useful to study epitaxial growth on alternative substrates to sapphire such as ZnO which offers the possibility of lattice matched growth. High-quality metalorganic chemical vapor deposition (MOCVD) of GaN on ZnO substrate is hard to grow due to the thermal stability of ZnO, out-diffusion of Zn, and H2́2back etching into the sample. Preliminary growths of GaN on bare ZnO substrates showed multiple cracks and peeling of the surface. A multi-buffer layer of LT-AlN/GaN was found to solve the cracking and peeling-off issues and demonstrated the first successful GaN growth on ZnO substrates. Good quality InGaN films were also grown showing indium compositions of 17-27% with no indium droplets or phase separation. ZnO was found to to sustain a higher strain state than sapphire, and thereby incorporating higher indium concentrations, as high as 43%, without phase separation, compared to the same growth on sapphire with only 32%. Si doping of InGaN layers, a known inducer for phase separation, did induce phase separation on sapphire growths, but not for growths on ZnO. This higher strain state for ZnO substrates was correlated to its perfect lattice match with InGaN at 18% indium concentration. Transmission electron microscopy results revealed reduction of threading dislocation and perfectly matched crystals at the GaN buffer/ZnO interface showing coherent growth of GaN on ZnO. However, Zn diffusion into the epilayer was an issue. Therefore, an atomic layer deposition of Al2́2O2́3was grown as a transition layer prior to GaN and InGaN growth by MOCVD. X-ray and PL showed distinct GaN peaks on Al2́2O2́3/ZnO layers demonstrating the first GaN films grown on Al2́2O2́3/ZnO. X-ray photoelectron spectroscopy showed a decrese in Zn diffusion into the epilayer, demonstrating that an ALD Al2́2O2́3layer was a promising transition layer for GaN growth on ZnO substrates by MOCVD.

Book Heteroepitaxial Growth of GaN Nanostructures Via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon Using Graphene as Buffer Layer

Download or read book Heteroepitaxial Growth of GaN Nanostructures Via Metalorganic Vapor Phase Epitaxy on Sapphire and Silicon Using Graphene as Buffer Layer written by Martin Heilmann and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Investigation of Nonpolar GaN based Epitaxial Growth and Optoelectronic Devices by Metalorganic Vapor Phase Epitaxy Technique

Download or read book Investigation of Nonpolar GaN based Epitaxial Growth and Optoelectronic Devices by Metalorganic Vapor Phase Epitaxy Technique written by 徐曉秋 and published by . This book was released on 2011 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Growth Doping and Characterization of GaN and AlGaN Deposited on 6H SiC 0001 Substrates Via Metalorganic Vapor Phase Epitaxy for Microelectronic Applications

Download or read book Growth Doping and Characterization of GaN and AlGaN Deposited on 6H SiC 0001 Substrates Via Metalorganic Vapor Phase Epitaxy for Microelectronic Applications written by Michael D. Bremser and published by . This book was released on 1997 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Preparation and Characterization of Thin Atomically Clean GaN 0001 and AlN 0001 Films and the Deposition of Thick GaN Films Via Iodine Vapor Phase Growth

Download or read book Preparation and Characterization of Thin Atomically Clean GaN 0001 and AlN 0001 Films and the Deposition of Thick GaN Films Via Iodine Vapor Phase Growth written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The research conducted for this dissertation involved two tasks important to the achievement of (1) increased breakdown fields and improved ohmic and rectifying contacts in future III-nitride devices and (2) GaN substrates for homoepitaxial growth of III-nitride films and material device structures with low densities of defects. The initial phase of this work involved the determination of an effective technique for the removal of oxygen and hydrocarbon contamination from GaN(0001) and AlN(0001) surfaces without damage to the as-received microstructure. It was determined via the combined use of x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, low energy electron diffraction, and atomic force microscopy (AFM) that a chemical vapor treatment with ammonia in an ultrahigh vacuum environment removed this contamination from these surfaces. The optimal conditions for both n- and p-type GaN were 860 & deg;C for 15 minutes at 10−4 Torr. Complete removal of the contaminants from the AlN surface required 1120 & deg;C for 30 minutes at 10−4 Torr . The microstructures of the surfaces of each material were undamaged. Important electrical and optical properties of the treated surfaces were determined, including the band bending, the electron affinity, and the elemental core level positions. The technique was subsequently employed to clean the surface of a GaN thin film substrate previously deposited and contained within a metal-organic vapor phase epitaxy (MOVPE) reactor. The introduction of ammonia into the gas mixture during heating resulted in substantial reduction in the contamination on this substrate, as determined via depth profile secondary ion mass spectroscopy at the heteroepitaxial interface between the substrate and a subsequently grown GaN film. This cleaning procedure also improved the microstructure of the homoepitaxial layer. The rapid growth of thick GaN films was achieved via the reaction between I-containing species an.

Book Lateral Epitaxial Growth Techniques for Gallium Nitride Thin Films on 6H silicon Carbide 0001 Substrates Via Metalorganic Vapor Phase Epitaxy

Download or read book Lateral Epitaxial Growth Techniques for Gallium Nitride Thin Films on 6H silicon Carbide 0001 Substrates Via Metalorganic Vapor Phase Epitaxy written by Darren Brent Thomson and published by . This book was released on 2001 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Low Temperature Epitaxial Growth of Semiconductors

Download or read book Low Temperature Epitaxial Growth of Semiconductors written by Takashi Hariu and published by World Scientific. This book was released on 1991 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low temperature processes for semiconductors have been recently under intensive development to fabricate controlled device structures with minute dimensions in order to achieve the highest device performance and new device functions as well as high integration density. Comprising reviews by experts long involved in the respective pioneering work, this volume makes a useful contribution toward maturing the process of low temperature epitaxy as a whole.

Book Hydride Vapor Phase Epitaxy Growth of GaN InGaN ScN and ScAIN

Download or read book Hydride Vapor Phase Epitaxy Growth of GaN InGaN ScN and ScAIN written by and published by . This book was released on 2010 with total page 185 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Book Growth Via Low Pressure Metalorganic Vapor Phase Epitaxy and Surface Characterization of GaN and In x Ga 1 x N Thin Films

Download or read book Growth Via Low Pressure Metalorganic Vapor Phase Epitaxy and Surface Characterization of GaN and In x Ga 1 x N Thin Films written by Peter Quinn Miraglia and published by . This book was released on 2001 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: