Download or read book Epitaxial Growth and Characterization of Gallium Nitride Films on SI 111 written by Biemann Alexander Martin and published by . This book was released on 2005 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Group III-nitrides, and in particular, aluminum nitride (AIN), gallium nitride (GaN), and indium nitride (InN) make up a class of compound semiconductors with direct bandgaps ranging from 1.2 electron volts to 6.2 electron volts (eV). They afford a broad range of applications including light emitting diodes (LED's) and laser diodes (LD's) emitting from the visible to the ultraviolet (UV) portions of the electromagnetic spectrum, radiation detectors, and high power, high frequency electronic devices capable of operating at high temperatures, and in hostile chemical environments. Materials studied in this work were grown on silicon substrates, Si(111) by Molecular Beam Epitaxy (MBE) under a broad range of growth parameters and characterized using X-ray diffraction (XRD), Energy Dispersive Spectroscopy (EDS), Atomic Force Microscopy (AFM), Photoluminescence (PL), and four-point probe resistivity measurements. Growth began with deposition of 0.3 monolayer (ML) of Al on the Si(111)7x7 surface leading to fully passivated Si(111) [root of]3x[root of]3-Al surface. Next, an AIN buffer layer and then the GaN layers were deposited. X-ray measurements indicated growth of single-crystalline hexagonal GaN(001) while PL measurement demonstrated a peak position corresponding to bulk hexagonal-GaN. Sample morphology and resistivity showed a strong dependence on growth conditions. The layer RMS roughness increased with increasing thickness for samples grown with low atomic-nitrogen (N) to molecular N ratio while smoother layers were obtained at the highest atomic N concentrations. Un-intentionally doped layers were n-type. P-type doping was achieved by doping with Mg.

Download or read book Large Area Lateral Epitaxial Overgrowth LEO of Gallium Nitride GaN Thin Films on Silicon Substrates and Their Characterization written by and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride films have been grown on 6H-SiC substrates employing a new form of selective lateral epitaxy, namely pendeo-epitaxy. This technique forces regrowth to start exclusively on sidewalls of GaN seed structures. Both discrete pendeo-epitaxial microstructures and coalesced single crystal layers of GaN have been achieved. Analysis by SEM and TEM are used to evaluate the morphology of the resulting GaN films. Process routes leading to GaN pendeo-epitaxial growth using silicon substrates have also been achieved and the preliminary results are discussed.

Download or read book Microstructural Characterization of Movpe Grown Aluminum Nitride Thin Films on Silicon 111 Substrates written by Vivek Thummala and published by . This book was released on 1997 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of Gallium Nitride Films on Porous Silicon Substrate written by Muhammad Esmed Alif Samsudin and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Epitaxial Growth of Nitrides on Germanium written by Ruben Lieten and published by ASP / VUBPRESS / UPA. This book was released on 2009-09 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.

Download or read book Characterization of Epitaxial Semiconductor Films written by Henry Kressel and published by Elsevier Science & Technology. This book was released on 1976 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The growth and characterization of gallium nitride epitaxial layers grown by low pressure metalorganic chemical vapor deposition written by Adrian Lawrence Holmes and published by . This book was released on 1994 with total page 90 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth and Characterization of Epitaxial Gallium Nitride Thin Flims Prepared by Magnetron Sputter Epitaxy written by Priti Singh and published by . This book was released on 1997 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Download or read book Two Dimensional Nanostructures for Energy Related Applications written by Kuan Yew Cheong and published by CRC Press. This book was released on 2017-03-27 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This edited book focuses on the latest advances and development of utilizing two-dimensional nanostructures for energy and its related applications. Traditionally, the geometry of this material refers to "thin film" or "coating." The book covers three main parts, beginning with synthesis, processing, and property of two-dimensional nanostructures for active and passive layers followed by topics on characterization of the materials. It concludes with topics relating to utilization of the materials for usage in devises for energy and its related applications.

Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Download or read book Nucleation Epitaxial Growth and Characterization of beta SiC Thin Films on Si by Rapid Thermal Chemical Vapor Deposition written by JiPing Li and published by . This book was released on 1994 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Laser Induced Chemical Vapor Epitaxial Growth of Gallium Arsenide Films written by Shirley S. Chu and published by . This book was released on 1988 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this project is to investigate the epitaxial growth of device quality III-V semiconductor films by the free electron laser-induced epitaxial growth technique at low temperatures. Efforts during the past year has been focused to the homo- and heteroepitaxial growth and characterization of gallium arsenide (GaAs) films on GaAs and silicon (Si) substrates by laser-induced metalorganic chemical vapor deposition (LIMOCVD). ArF excimer laser (193 nm) was used before the free electron laser is available. The reaction between trimethylgallium and arsine in hydrogen under reduced pressure was used for the epitaxial growth of GaAs. Homoepitaxial GaAs films deposited by LIMOCVD at 425 - 500 C are similar to conventional homoepitaxial GaAs films (at 700 C) in properties. Heteroepitaxial GaAs films on Si substrates of (100) orientation have been deposited at 500 C by LIMOCVD with emphasis on the cleanliness of the substrate surface. Transmission electron microscopy and Raman spectra indicated that the heteroepitaxial GaAs films are presumably of a (111) orientation and that their crystalline perfection is superior to those deposited by other techniques. Keywords: Epitaxial growth; Chemical vapor deposition; Excimer; Homoepitaxial growth; Heteroepitaxial growth; Dislocation; Doping concentration.

Download or read book Epitaxial Growth of III Nitride Compounds written by Takashi Matsuoka and published by Springer. This book was released on 2018-04-17 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

Download or read book Novel Approach to the Growth and Characterization of Aligned Epitaxial Gallium Nitride Nanowires written by Tania Alicia Henry and published by . This book was released on 2010 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Growth of Wurtzite Gallium Nitride Epitaxial Films on Sapphire Substrate by Reactive Molecular Beam Epitaxy and Material Characterization written by Wook Kim and published by . This book was released on 1998 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2018-10-08 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.