Download or read book Epitaxial Germanium Nanodots in Silicon written by Jacob Balle and published by LAP Lambert Academic Publishing. This book was released on 2010-09-01 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: The discovery of quantum dots has contributed in creating the entire new field of nanotechnology. Semiconductor quantum dots in particular have promised a new leap for semiconductor devices, decreasing devices sizes from m and mm scales to nanoscales. Applications for such devices range from high-density data storage to nanoscale lasers integrated directly into computer chips and other integrated circuits, providing optical data transmission far superior to present day "Copper technology", directly between electronic components. The problem has been to create these quantum dots and the thesis project behind this book addresses this problem for group-IV semiconductors which are the most widely used material in present-day semiconductor technology. The thesis delivers a review of previous results in this field and investigate the possibility of (and attempt) growing Germanium quantum dots in Silicon. As it turns out - not to anticipate the conclusion - this does not seem to be possible with pure grown Germanium dots in Silicon, but other paths might be possible. The book aims for academics, professionals and others with interest in nanoscale electronics.
Download or read book Electron Charging in Epitaxial Germanium Quantum Dots on Silicon 100 written by Sutharsan Ketharanathan and published by . This book was released on 2007 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt: Experiments involving Ge quantum dot growth, growth of Sb-doped Si and morphological evolution during encapsulation of the Ge dots during Si overgrowth were performed in order to optimize the conditions for obtaining distinct Ge quantum dot morphologies. This investigation included finding a suitable method to minimize Sb segregation while maintaining good dot epitaxy and overall crystal quality.
Download or read book Silicon Germanium and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Download or read book Epitaxial Growth of Nitrides on Germanium written by Ruben Lieten and published by ASP / VUBPRESS / UPA. This book was released on 2009-09 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive guide to the formation of epitaxial III-Nitrides and epitaxial Ge3N4 on germanium substrates--and solid phase epitaxy of germanium on silicon substrates--this work presents a simple but effective method for growing epitaxial III-Nitride layers on crystalline germanium surfaces. Beside epitaxial III-Nitride growth, a method is introduced to obtain epitaxial Ge3N4 on germanium. Finally a novel method to produce high-quality germanium layers on silicon is introduced, allowing interactions between germanium devices and silicon technology. This study provides researchers with a detailed look at the formation of crystalline nitrides on germanium, germanium on silicon, Schottky contacts on germanium, and electrochemical measurements.
Download or read book Silicon Germanium SiGe Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Download or read book Nanophenomena at Surfaces written by Michail Michailov and published by Springer Science & Business Media. This book was released on 2011-02-24 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the state of the art in nanoscale surface physics. It outlines contemporary trends in the field covering a wide range of topical areas: atomic structure of surfaces and interfaces, molecular films and polymer adsorption, biologically inspired nanophysics, surface design and pattern formation, and computer modeling of interfacial phenomena. Bridging "classical" and "nano" concepts, the present volume brings attention to the physical background of exotic condensed-matter properties. The book is devoted to Iwan Stranski and Rostislaw Kaischew, remarkable scientists, who played a crucial role in setting up the theoretical fundamentals of nucleation and crystal growth phenomena in the last century.
Download or read book Studies of the Initial Stages of Epitaxial Growth of Germanium on Silicon written by Mohan Krishnamurthy and published by . This book was released on 1991 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 21st Century Nanoscience written by Klaus D. Sattler and published by CRC Press. This book was released on 2022-01-18 with total page 4153 pages. Available in PDF, EPUB and Kindle. Book excerpt: This 21st Century Nanoscience Handbook will be the most comprehensive, up-to-date large reference work for the field of nanoscience. Handbook of Nanophysics, by the same editor, published in the fall of 2010, was embraced as the first comprehensive reference to consider both fundamental and applied aspects of nanophysics. This follow-up project has been conceived as a necessary expansion and full update that considers the significant advances made in the field since 2010. It goes well beyond the physics as warranted by recent developments in the field. Key Features: Provides the most comprehensive, up-to-date large reference work for the field. Chapters written by international experts in the field. Emphasises presentation and real results and applications. This handbook distinguishes itself from other works by its breadth of coverage, readability and timely topics. The intended readership is very broad, from students and instructors to engineers, physicists, chemists, biologists, biomedical researchers, industry professionals, governmental scientists, and others whose work is impacted by nanotechnology. It will be an indispensable resource in academic, government, and industry libraries worldwide. The fields impacted by nanoscience extend from materials science and engineering to biotechnology, biomedical engineering, medicine, electrical engineering, pharmaceutical science, computer technology, aerospace engineering, mechanical engineering, food science, and beyond.
Download or read book Germanium silicon Strained Layers and Heterostructures written by Suresh C. Jain and published by . This book was released on 1994 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.
Download or read book Quantum Dot Formation by Molecular Beam Epitaxy of Ge on Si 100 written by Sergio Arturo Chaparro and published by . This book was released on 1999 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metallization and Solid Phase Epitaxy of Germanium silicon Alloys written by Qi-Zhong Hong and published by . This book was released on 1991 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book 21st Century Nanoscience A Handbook written by Klaus D. Sattler and published by CRC Press. This book was released on 2019-11-26 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: This up-to-date reference is the most comprehensive summary of the field of nanoscience and its applications. It begins with fundamental properties at the nanoscale and then goes well beyond into the practical aspects of the design, synthesis, and use of nanomaterials in various industries. It emphasizes the vast strides made in the field over the past decade – the chapters focus on new, promising directions as well as emerging theoretical and experimental methods. The contents incorporate experimental data and graphs where appropriate, as well as supporting tables and figures with a tutorial approach.
Download or read book State of the Art Program on Compound Semiconductors XL SOTAPOCS XL and Narrow Bandgap Optoelectronic Materials and Devices II written by D. N. Buckley and published by The Electrochemical Society. This book was released on 2004 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Sinep 2009 1st International Workshop on Si Based Nano Electronics and Photonics written by Steafno Chiussi and published by Netbiblo. This book was released on 2009-06 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main objective of this International Workshop in Vigo is to target this major problem by bringing together scientists and engineers specialized on various different topics related to group IV semiconductors. In five consecutive sessions dedicated to - Group IV materials: CMOS and further extension of the roadmap - Group IV materials: Nano-photonics - Material aspects and characterization on nano-scale - Nanostructures and material processing on atomic scale
Download or read book Growth of Epitaxial Silicon and Germanium Nanowires Using the Gold Catalyzed Vapor liquid solid Mechanism written by Eric J. Dailey and published by . This book was released on 2010 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Germanium tin silicon Epitaxial Structures Grown on Silicon by Reduced Pressure Chemical Vapour Deposition written by David Patchett and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Advanced Short time Thermal Processing for Si based CMOS Devices written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 2003 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt:
