Download or read book Engineering Ohmic Contacts to III V III N and 2D Dichalcogenides written by Michael Abraham and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new era of smart interconnected systems of electronic devices has begun, with cloud computing (big data) and artificial intelligence amplifying the capacity and impact of these systems on human society. Behind this technological revolution lie Si-based complementary metaloxidesemiconductor (CMOS) logic devices as well as high-power and high-frequency radio-frequency (RF) electronics, which are key enablers of the current progress. However, as we look into the future, the trend set by Moores law for ever smaller, higher-performance, and more power-efficient devices is reaching its limit, and soon Si may no longer serve as the material of choice in some aggressively scaled transistors. For example, InGaAs is being considered as channel materials to replace Si. Similar efforts are also underway to replace Si with GaN in RF applications. Moreover, transition metal dichalcogenides such as MoS2 are interesting for flexible electronics applications. As these new materials take hold, key processes such as contact metallization must be investigated and optimized in order to improve the performance of next-generation devices. This dissertation discusses studies of Ohmic contacts to GaN, InGaAs, and MoS2, focusing on how surface preparation and annealing affect contact resistance. During the first phase of this dissertation, we investigated Ti/Al contacts to N-polar GaN/AlGaN heterostructures. The resistance of Ti/Al-based contacts was found to depend sensitively on their interfacial composition. Limiting the thickness of the first layer deposited (either Al or Ti) to a few nanometers produced low contact resistances after annealing for 60 s at 500 C. The lowest contact resistance of 0.10 mm (specific contact resistance, _c, of 3 107 cm2) was achieved with 3 nm of Al as the first deposited layer. Cross-sectional transmission electron microscopy (TEM) studies revealed a thin TiAl-GaN layer adjacent to the GaN in this annealed Al/Ti/Al contact, while the contact resistance was higher when the interfacial layer contained only Ti, Ga, and N. The simultaneous presence of Al and Ti next to GaN at the onset of reaction was found to be critical for achieving the lowest contact resistance.Drawing from lessons learned about surface preparation and alloyed contacts to GaN, in the second phase of this dissertation, we investigated Ni-based alloyed contacts to InP-capped and uncapped n+-In0.53Ga0.47As (ND = 31019 cm3). Contacts with specific contact resistances of 4.0 108 7 109 cm2 and 4.6 108 9 109 cm2 were achieved for the capped and uncapped samples, respectively, after annealing at 350 C for 60 s. By using a pre-metallization surface treatment of ammonium sulfide, _c decreased further to 2.1 108 2 109 cm2 and 1.8 108 1 109 cm2 on epilayers with and without 10-nm InP caps, respectively. Cross-sectional TEM micrographs revealed that the ammonium sulfide surface treatment more completely eliminated the semiconductors native oxide at the contact interface, which we believe caused the reduced contact resistance both before and after annealing. In the third and final phase of this dissertation, alloyed Ag contacts to few-layer (FL)-MoS2 were investigated. Similar to the two contacts investigated earlier in this dissertation, annealing was critical for achieving low contact resistance. The contact resistances of the as-deposited samples were 0.83.5 mm, while the annealed contacts exhibited lower contact resistances of 0.20.5 mm for MoS2 from 5 to 14 layers or ~3 to 9 nm thick. TEM micrographs of the annealed contacts revealed that the Ag was epitaxial on MoS2. Electron energy-loss spectroscopy (EELS) spectra collected near the Ag/MoS2 contacts showed limited interdiffusion at the metal/semiconductor interface as well as the presence of Ag in the underlying MoS2. Furthermore, thanks to the effective pre- and post-metallization surface preparation, no gross interfacial contaminants (oxygen and resist residue) appeared, indicating the formation of an intimate contact between the Ag and MoS2. Overall, this dissertation shows the importance of surface preparation and annealing in producing low-resistance Ohmic contacts to GaN, InGaAs, and MoS2. Therefore, the contact metallization processes developed here may eventually aid in the development of next-generation electronics based on these semiconductors.
Download or read book Ohmic Contacts to Semiconductors written by Electrochemical Society and published by . This book was released on 1969 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Handbook of Emerging Materials for Semiconductor Industry written by Young Suh Song and published by Springer Nature. This book was released on with total page 930 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Two Dimensional Materials written by Rafik Addou and published by Elsevier. This book was released on 2022-02-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Two-Dimensional Materials addresses the fundamental physics and chemistry of defects in 2D materials and their effects on physical, electrical and optical properties. The book explores 2D materials such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMD). This knowledge will enable scientists and engineers to tune 2D materials properties to meet specific application requirements. The book reviews the techniques to characterize 2D material defects and compares the defects present in the various 2D materials (e.g. graphene, h-BN, TMDs, phosphorene, silicene, etc.). As two-dimensional materials research and development is a fast-growing field that could lead to many industrial applications, the primary objective of this book is to review, discuss and present opportunities in controlling defects in these materials to improve device performance in general or use the defects in a controlled way for novel applications. Presents the theory, physics and chemistry of 2D materials Catalogues defects of 2D materials and their impacts on materials properties and performance Reviews methods to characterize, control and engineer defects in 2D materials
Download or read book Integration of 2D Materials for Electronics Applications written by Filippo Giannazzo and published by MDPI. This book was released on 2019-02-13 with total page 265 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a printed edition of the Special Issue "Integration of 2D Materials for Electronics Applications" that was published in Crystals
Download or read book Ohmic Contacts to Semiconductors written by Bertram Schwartz and published by . This book was released on 1969 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Two Dimensional Transition Metal Dichalcogenides written by Narayanasamy Sabari Arul and published by Springer. This book was released on 2019-07-30 with total page 355 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents advanced synthesis techniques adopted to fabricate two-dimensional (2D) transition metal dichalcogenides (TMDs) materials with its enhanced properties towards their utilization in various applications such as, energy storage devices, photovoltaics, electrocatalysis, electronic devices, photocatalysts, sensing and biomedical applications. It provides detailed coverage on everything from the synthesis and properties to the applications and future prospects of research in 2D TMD nanomaterials.
Download or read book Two Dimensional Transition Metal Dichalcogenides written by Chi Sin Tang and published by John Wiley & Sons. This book was released on 2023-11-08 with total page 357 pages. Available in PDF, EPUB and Kindle. Book excerpt: Two-Dimensional Transition-Metal Dichalcogenides Comprehensive resource covering rapid scientific and technological development of polymorphic two-dimensional transition-metal dichalcogenides (2D-TMDs) over a range of disciplines and applications Two-Dimensional Transition-Metal Dichalcogenides: Phase Engineering and Applications in Electronics and Optoelectronics provides a discussion on the history of phase engineering in 2D-TMDs as well as an in-depth treatment on the structural and electronic properties of 2D-TMDs in their respective polymorphic structures. The text addresses different forms of in-situ synthesis, phase transformation, and characterization methods for 2D-TMD materials and provides a comprehensive treatment of both the theoretical and experimental studies that have been conducted on 2D-TMDs in their respective phases. Two-Dimensional Transition-Metal Dichalcogenides includes further information on: Thermoelectric, fundamental spin-orbit structures, Weyl semi-metallic, and superconductive and related ferromagnetic properties that 2D-TMD materials possess Existing and prospective applications of 2D-TMDs in the field of electronics and optoelectronics as well as clean energy, catalysis, and memristors Magnetism and spin structures of polymorphic 2D-TMDs and further considerations on the challenges confronting the utilization of TMD-based systems Recent progress of mechanical exfoliation and the application in the study of 2D materials and other modern opportunities for progress in the field Two-Dimensional Transition-Metal Dichalcogenides provides in-depth review introducing the electronic properties of two-dimensional transition-metal dichalcogenides with updates to the phase engineering transition strategies and a diverse range of arising applications, making it an essential resource for scientists, chemists, physicists, and engineers across a wide range of disciplines.
Download or read book Nanoelectronics written by Robert Puers and published by John Wiley & Sons. This book was released on 2017-06-19 with total page 694 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering first-hand insights by top scientists and industry experts at the forefront of R&D into nanoelectronics, this book neatly links the underlying technological principles with present and future applications. A brief introduction is followed by an overview of present and emerging logic devices, memories and power technologies. Specific chapters are dedicated to the enabling factors, such as new materials, characterization techniques, smart manufacturing and advanced circuit design. The second part of the book provides detailed coverage of the current state and showcases real future applications in a wide range of fields: safety, transport, medicine, environment, manufacturing, and social life, including an analysis of emerging trends in the internet of things and cyber-physical systems. A survey of main economic factors and trends concludes the book. Highlighting the importance of nanoelectronics in the core fields of communication and information technology, this is essential reading for materials scientists, electronics and electrical engineers, as well as those working in the semiconductor and sensor industries.
Download or read book Semiconductors Dielectrics and Metals for Nanoelectronics 15 In Memory of Samares Kar written by D. Misra and published by The Electrochemical Society. This book was released on with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Micro and Nanotechnology Sensors Systems and Applications VI written by SPIE (Society) and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Two Dimensional Transition Metal Dichalcogenides written by Alexander V. Kolobov and published by Springer. This book was released on 2016-07-26 with total page 545 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the current status of theoretical and experimental progress in 2 dimensional graphene-like monolayers and few-layers of transition metal dichalcogenides (TMDCs). Semiconducting monolayer TMDCs, due to the presence of a direct gap, significantly extend the potential of low-dimensional nanomaterials for applications in nanoelectronics and nano-optoelectronics as well as flexible nano-electronics with unprecedented possibilities to control the gap by external stimuli. Strong quantum confinement results in extremely high exciton binding energies which forms an interesting platform for both fundamental studies and device applications. Breaking of spatial inversion symmetry in monolayers results in strong spin-valley coupling potentially leading to their use in valleytronics. Starting with the basic chemistry of transition metals, the reader is introduced to the rich field of transition metal dichalcogenides. After a chapter on three dimensional crystals and a description of top-down and bottom-up fabrication methods of few-layer and single layer structures, the fascinating world of two-dimensional TMDCs structures is presented with their unique atomic, electronic, and magnetic properties. The book covers in detail particular features associated with decreased dimensionality such as stability and phase-transitions in monolayers, the appearance of a direct gap, large binding energy of 2D excitons and trions and their dynamics, Raman scattering associated with decreased dimensionality, extraordinarily strong light-matter interaction, layer-dependent photoluminescence properties, new physics associated with the destruction of the spatial inversion symmetry of the bulk phase, spin-orbit and spin-valley couplings. The book concludes with chapters on engineered heterostructures and device applications such as a monolayer MoS2 transistor. Considering the explosive interest in physics and applications of two-dimensional materials, this book is a valuable source of information for material scientists and engineers working in the field as well as for the graduate students majoring in materials science.
Download or read book 2D Monoelemental Materials Xenes and Related Technologies written by Zongyu Huang and published by CRC Press. This book was released on 2022-04-19 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monoelemental 2D materials called Xenes have a graphene-like structure, intra-layer covalent bond, and weak van der Waals forces between layers. Materials composed of different groups of elements have different structures and rich properties, making Xenes materials a potential candidate for the next generation of 2D materials. 2D Monoelemental Materials (Xenes) and Related Technologies: Beyond Graphene describes the structure, properties, and applications of Xenes by classification and section. The first section covers the structure and classification of single-element 2D materials, according to the different main groups of monoelemental materials of different components and includes the properties and applications with detailed description. The second section discusses the structure, properties, and applications of advanced 2D Xenes materials, which are composed of heterogeneous structures, produced by defects, and regulated by the field. Features include: Systematically detailed single element materials according to the main groups of the constituent elements Classification of the most effective and widely studied 2D Xenes materials Expounding upon changes in properties and improvements in applications by different regulation mechanisms Discussion of the significance of 2D single-element materials where structural characteristics are closely combined with different preparation methods and the relevant theoretical properties complement each other with practical applications Aimed at researchers and advanced students in materials science and engineering, this book offers a broad view of current knowledge in the emerging and promising field of 2D monoelemental materials.
Download or read book IRC SET 2020 written by Huaqun Guo and published by Springer Nature. This book was released on 2021-05-11 with total page 787 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights leading-edge research in multi-disciplinary areas in Physics, Engineering, Medicine, and Health care, from the 6th IRC Conference on Science, Engineering and Technology (IRC-SET 2020) held in July 2020 at Singapore. The papers were shortlisted after extensive rounds of reviews by a panel of esteemed individuals who are pioneers in their domains. The book also contains excerpts of the speeches by eminent personalities who graced the occasion, thereby providing written documentation of the event.
Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1299 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Download or read book Solid State Properties written by Mildred Dresselhaus and published by Springer. This book was released on 2018-01-17 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book fills a gap between many of the basic solid state physics and materials sciencebooks that are currently available. It is written for a mixed audience of electricalengineering and applied physics students who have some knowledge of elementaryundergraduate quantum mechanics and statistical mechanics. This book, based on asuccessful course taught at MIT, is divided pedagogically into three parts: (I) ElectronicStructure, (II) Transport Properties, and (III) Optical Properties. Each topic is explainedin the context of bulk materials and then extended to low-dimensional materials whereapplicable. Problem sets review the content of each chapter to help students to understandthe material described in each of the chapters more deeply and to prepare them to masterthe next chapters.
Download or read book Metal semiconductor Interfaces written by Akio Hiraki and published by IOS Press. This book was released on 1995 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
