Download or read book Electronic States of Narrow Gap Semiconductors Under Multi Extreme Conditions written by Kazuto Akiba and published by Springer. This book was released on 2019-04-04 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly understand the typical electronic character of narrow-gap semiconductor materials, which has recently attracted interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to understand the high magnetic field and pressure experiments.

Download or read book Electronic Structure of Narrow Gap Semiconductors written by Paul Melvin Larson and published by . This book was released on 2001 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic and Electronic Structures of Novel Ternary and Quaternary Narrow Band gap Semiconductors written by Khang Hoang and published by . This book was released on 2007 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics and Properties of Narrow Gap Semiconductors written by Junhao Chu and published by Springer Science & Business Media. This book was released on 2007-11-21 with total page 613 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.

Download or read book Defect Structure and Transport Properties of Narrow Gap Semiconductor PbTe and Related Systems written by Salameh M. Ahmad and published by . This book was released on 2007 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Structure and Quantized Surface Electron Accumulation of Narrow Band Gap Semiconductors written by Leyla Colakerol and published by . This book was released on 2009 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Narrow band gap semiconductors play a crucial role in thin film photovoltaic cells and optoelectronics devices operating in the infrared region of visible spectrum. The interactions between the valence and conduction bands due to the narrow band gap have a big influence on the electronic structure and the device performance of these materials. The surface and bulk electronic properties of narrow band gap semiconductors were investigated using angle resolved photoelectron spectroscopy (ARPES), x-ray absorption spectroscopy and x-ray emission spectroscopy. Comparisons were made between the experimental results and density functional theory band structure calculations. Intrinsic electron accumulation near the surface of clean InN was directly observed by ARPES. The accumulation layer is discussed in terms of the bulk Fermi level (E F) lying below the pinned surface E F, with a confining potential formed normal to surface due to the downward band bending facilitated by donor type surface states or nitrogen vacancies. Various spectroscopic techniques were used to measure this band bending. The energy of the Fermi level and the size of the Fermi surface for these quantum well states could be controlled by varying the method of surface preparation and by the adsorption of potassium on the surface. Intermixing between the heavy and light hole valence bands in the intrinsic quantum well potential associated with the surface electron accumulation layer results in an inverted band structure, with the valence band maximum lying away from the Brillouin zone center. Similarly, the electronic band structure of CdO was investigated and quantized electron subbands were observed above the valence band maximum. The origin of the accumulation layer is discussed in terms of the bulk band structure of CdO calculated using quasi particle corrected density functional theory. High electron density at the surface of these materials provides new opportunities for potential device structures such as sensors, high frequency transmitters and field effect transistors. Therefore the study of their near surface electron accumulation and electronic structure is of importance in understanding the properties of these materials and discovering new application areas.

Download or read book Device Physics of Narrow Gap Semiconductors written by Junhao Chu and published by Springer Science & Business Media. This book was released on 2009-10-13 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.

Download or read book Electronic Structure and Thermoelectric Properties of Narrow Band Gap Semiconductors and Pseudo gap Systems written by Dat Thanh Do and published by . This book was released on 2013 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Structure of Semiconductor Heterojunctions written by Giorgio Margaritondo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles

Download or read book Narrow Gap Semiconductors written by and published by Springer. This book was released on 2006-04-11 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Narrow Gap Semiconductors written by Junichiro Kono and published by CRC Press. This book was released on 2006-05-25 with total page 636 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges.

Download or read book The Physics of Semimetals and Narrow gap Semiconductors written by David L. Carter and published by Pergamon. This book was released on 1971 with total page 594 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Structure of Semiconductor Interfaces written by Winfried Mönch and published by Springer Nature. This book was released on 2024 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor-semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors. In addition, this book: Explains intrinsic interface states of electron states that overlap the band gap of a semiconductor at the interface Includes experimental data on Schottky contacts including carrier height, ideality factor and flat-band barrier height Compares of Theoretical and Experimental Data for a range of semiconductors.

Download or read book Narrow Gap Semiconductors Physics and Applications written by W. Zawadzki and published by Springer. This book was released on 1980-10-01 with total page 574 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the International Summer School, held in Nimes, France, September, 3-15, 1979

Download or read book Narrow Gap Semiconductors 1995 written by J.L Reno and published by CRC Press. This book was released on 2020-11-26 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.

Download or read book Optical Properties of Narrow Gap Low Dimensional Structures written by Clivia M. Sotomayor Torres and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 357 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the Proceedings of the NATO Advanced Research Workshop on "Optical Properties of Narrow-Gap Low-Dimensional Structures", held from July 29th to August 1st, 1986, in St. Andrews, Scotland, under the auspices of the NATO International Scientific Exchange Program. The workshop was not limited to optical properties of narrow-gap semiconductor structures (Part III). Sessions on, for example, the growth methods and characterization of III-V, II-VI, and IV-VI materials, discussed in Part II, were an integral part of the workshop. Considering the small masses of the carriers in narrow-gap low dimensional structures (LOS), in Part I the enhanced band mixing and magnetic field effects are explored in the context of the envelope function approximation. Optical nonlinearities and energy relaxation phenomena applied to the well-known systems of HgCdTe and GaAs/GaAIAs, respectively, are reviewed with comments on their extension to narrow gap LOS. The relevance of optical observations in quantum transport studies is illustrated in Part IV. A review of devices based on epitaxial narrow-gap materials defines a frame of reference for future ones based on two-dimensional narrow-gap semiconductors; in addition, an analysis of the physics of quantum well lasers provides a guide to relevant parameters for narrow-gap laser devices for the infrared (Part V). The roles and potentials of special techniques are explored in Part VI, with emphasis on hydrostatic pressure techniques, since this has a pronounced effect in small-mass, narrow-gap, non-parabolic structures.

Download or read book Narrow Gap Semiconductors 2007 written by Ben Murdin and published by Springer Science & Business Media. This book was released on 2008-11-30 with total page 195 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors.