Download or read book Electronic Structure and Thermoelectric Properties of Narrow Band Gap Semiconductors and Pseudo gap Systems written by Dat Thanh Do and published by . This book was released on 2013 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Structure of Narrow Gap Semiconductors written by Paul Melvin Larson and published by . This book was released on 2001 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Structure and Thermoelectric Properties on Narrow Band Gap Chalcogenides written by Daniel Bilc and published by . This book was released on 2005 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Atomic and Electronic Structures of Novel Ternary and Quaternary Narrow Band gap Semiconductors written by Khang Hoang and published by . This book was released on 2007 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Structure and Quantized Surface Electron Accumulation of Narrow Band Gap Semiconductors written by Leyla Colakerol and published by . This book was released on 2009 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Narrow band gap semiconductors play a crucial role in thin film photovoltaic cells and optoelectronics devices operating in the infrared region of visible spectrum. The interactions between the valence and conduction bands due to the narrow band gap have a big influence on the electronic structure and the device performance of these materials. The surface and bulk electronic properties of narrow band gap semiconductors were investigated using angle resolved photoelectron spectroscopy (ARPES), x-ray absorption spectroscopy and x-ray emission spectroscopy. Comparisons were made between the experimental results and density functional theory band structure calculations. Intrinsic electron accumulation near the surface of clean InN was directly observed by ARPES. The accumulation layer is discussed in terms of the bulk Fermi level (E F) lying below the pinned surface E F, with a confining potential formed normal to surface due to the downward band bending facilitated by donor type surface states or nitrogen vacancies. Various spectroscopic techniques were used to measure this band bending. The energy of the Fermi level and the size of the Fermi surface for these quantum well states could be controlled by varying the method of surface preparation and by the adsorption of potassium on the surface. Intermixing between the heavy and light hole valence bands in the intrinsic quantum well potential associated with the surface electron accumulation layer results in an inverted band structure, with the valence band maximum lying away from the Brillouin zone center. Similarly, the electronic band structure of CdO was investigated and quantized electron subbands were observed above the valence band maximum. The origin of the accumulation layer is discussed in terms of the bulk band structure of CdO calculated using quasi particle corrected density functional theory. High electron density at the surface of these materials provides new opportunities for potential device structures such as sensors, high frequency transmitters and field effect transistors. Therefore the study of their near surface electron accumulation and electronic structure is of importance in understanding the properties of these materials and discovering new application areas.

Download or read book Electronic States of Narrow Gap Semiconductors Under Multi Extreme Conditions written by Kazuto Akiba and published by Springer. This book was released on 2019-04-04 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe. The overviews on BP and PbTe from the point of view of material properties help readers quickly understand the typical electronic character of narrow-gap semiconductor materials, which has recently attracted interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to understand the high magnetic field and pressure experiments.

Download or read book Electronic Structure and Optical Properties of Semiconductors written by Marvin L. Cohen and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 273 pages. Available in PDF, EPUB and Kindle. Book excerpt: We began planning and writing this book in the late 1970s at the suggestion of Manuel Cardona and Helmut Lotsch. We also received considerable en couragement and stimulation from colleagues. Some said there was a need for instructional material in this area while others emphasized the utility of a research text. We tried to strike a compromise. The figures, tables, and references are included to enable researchers to obtain quickly essential information in this area of semiconductor research. For instructors and stu dents, we attempt to cover some basic ideas about electronic structure and semiconductor physics with applications to real, rather than model, solids. We wish to thank our colleagues and collaborators whose research re sults and ideas are presented here. Special thanks are due to Jim Phillips who influenced us both during our formative years and afterwards. We are grateful to Sari Yamagishi for her patience and skill with the typing and production of the manuscript. Finally, we acknowledge the great patience of Helmut Lotsch and Manuel Cardona. Berkeley, CA M.L. Cohen Minneapolis, MN, J.R. Chelikowsky March 1988 VII Contents 1. Introduction............................................... 1 2. Theoretical Concepts and Methods ..................... 4 2.1 The One-Electron Model and Band Structure............ 7 2.2 Properties of En(k) ...................................... 11 3. Pseudopotentials. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 . . . . . . . . . . . . 3.1 The Empirical Pseudopotential Method.................. 20 3.2 Self-Consistent and Ab Initio Pseudopotentials ........... 25 4. Response Functions and Density of States .............. 30 4.1 Charge Density and Bonding ................... . . . . . . . . . 38 .

Download or read book Physics and Properties of Narrow Gap Semiconductors written by Junhao Chu and published by Springer. This book was released on 2010-11-29 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.

Download or read book Electronic Structure of Semiconductor Heterojunctions written by Giorgio Margaritondo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles

Download or read book Electronic Structure of Metal Semiconductor Contacts written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-

Download or read book Electronic Structure and Properties of Semiconductors written by Wolfgang Schröter and published by . This book was released on 1991 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Narrow Gap Semiconductors written by and published by Springer. This book was released on 2006-04-11 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Download or read book Modules Systems and Applications in Thermoelectrics written by David Michael Rowe and published by CRC Press. This book was released on 2012-04-25 with total page 585 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprising two volumes, Thermoelectrics and Its Energy Harvesting reviews the dramatic improvements in technology and application of thermoelectric energy with a specific intention to reduce and reuse waste heat and improve novel techniques for the efficient acquisition and use of energy. This volume, Modules, Systems and Applications in Thermoelectrics, discusses the practical, novel, and truly groundbreaking applications of thermoelectrics in a range of markets. The book details the U.S. interest in alternative energy and energy harvesting, specifically, the current efforts to use thermoelectric generators (TGs) to reduce emissions. Internationally, it expounds on the strong interest in Japan, Korea and Europe to incorporate TGs in cars to reduce fuel consumption and meet EU carbon dioxide emission targets; the European plans to build an isotopic powered thermoelectric generator; and India’s use of TG s in converting hot water from steel mills into electricity.

Download or read book Transport Properties of Wide Band Gap Semiconductors written by Louis Tirino and published by . This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transport Properties of Wide Band Gap Semiconductors Louis Tirino III 155 pages Directed by Dr. Kevin F. Brennan The objective of this research has been the study of the transport properties and breakdown characteristics of wide band gap semiconductor materials and their implications on device performance. Though the wide band gap semiconductors have great potential for a host of device applications, many gaps remain in the collective understanding about their properties, frustrating the evaluation of devices made from these materials. The model chosen for this study is based on semiclassical transport theory as described by the Boltzmann Transport Equation. The calculations are performed using an ensemble Monte Carlo simulation method. The simulator includes realistic, numerical energy band structures derived from an empirical pseudo-potential method. The carrier-phonon scattering rates and impact ionization transition rates are numerically evaluated from the electronic band structure. Several materials systems are discussed and compared. The temperature-dependent, high-field transport properties of electrons in gallium arsenide, zincblende gallium nitride, and cubic-phase silicon carbide are compared. Since hole transport is important in certain devices, the simulator is designed to simulate electrons and holes simultaneously. The bipolar simulator is demonstrated in the study of the multiplication region of gallium nitride avalanche photodiodes.

Download or read book Elementary Electronic Structure written by Walter Ashley Harrison and published by World Scientific. This book was released on 2004 with total page 866 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a revised edition of the 1999 text on the electronic structure and properties of solids, similar in spirit to the well-known 1980 text Electronic Structure and the Properties of Solids. The revisions include an added chapter on glasses, and rewritten sections on spin-orbit coupling, magnetic alloys, and actinides. The text covers covalent semiconductors, ionic insulators, simple metals, and transition-metal and f-shell-metal systems. It focuses on the most important aspects of each system, making what approximations are necessary in order to proceed analytically and obtain formulae for the properties. Such back-of-the-envelope formulae, which display the dependence of any property on the parameters of the system, are characteristic of Harrison's approach to electronic structure, as is his simple presentation and his provision of all the needed parameters.In spite of the diversity of systems and materials, the approach is systematic and coherent, combining the tight-binding (or atomic) picture with the pseudopotential (or free-electron) picture. This provides parameters ? the empty-core radii as well as the covalent energies ? and conceptual bases for estimating the various properties of all these systems. Extensive tables of parameters and properties are included.The book has been written as a text, with problems at the end of each chapter, and others can readily be generated by asking for estimates of different properties, or different materials, than those treated in the text. In fact, the ease of generating interesting problems reflects the extraordinary utility and simplicity of the methods introduced. Developments since the 1980 publication have made the theory simpler and much more accurate, besides allowing much wider application.

Download or read book Boron and Refractory Borides written by G.V. Samsonov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 666 pages. Available in PDF, EPUB and Kindle. Book excerpt: V. I. MATKOVICH During the meeting of the International Symposium on Boron held in October, 1972 in Tbilisi, U.S.S.R., the idea was proposed to assemble a review of boron and refractory borides by the specialists present. The advantages of such a work were immediately apparent. Such diverse applications of borides as in protective armor, nuclear reactors, coat ings, reinforcement, etc. can hardly all be presented in sufficient detail by a single author. On the other hand it was also recognized that with so much specialization, some areas of interest may not be covered. Within the last decade or two a number of areas have been developed in which the use of refractory borides is growing and improvements are being actively explored. Thus, a number of borides have considerable potential as reinforcing material for plastics or light metals, though only boron fibers have been firmly established up to the present. Ap plication of flakes and films for two-dimensional reinforcement appears attractive, although the high cost of materials and development repre sents a considerable barrier. A number of borides have been used to manufacture lightweight protec tive armor. In this area relatively fast changes seem to be taking place as improvements in performance and weight are made. Boron carbide has found considerable use in this application and new developments exploit the light weight of beryllium borides.