Download or read book Electronic States and Optical Transitions in Bulk and Quantum Well Structures of III V Compound Semiconductors written by Yong Hee Cho and published by . This book was released on 2015 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work we apply the methods of band structure calculation combined with self-consistent treatment of the light-matter interaction to a variety of problems in bulk semiconductors and semiconductor heterostructures as well as in new optoelectronic devices. In particular, we utilize the 30- and 8-band k · p band structure calculation methods to study the electronic, magnetic, and optical properties of the diluted magnetic semiconductor, GaMnAs, in the mean-field Zener model. We calculate the anisotropic dielectric response of GaMnAs in the metallic regime and show that our model produces a good agreement with the experimental results of magneto-optical Kerr spectroscopy in the interband transition region. We also discuss the advantages of the 30-band k · p model for spin-polarized ferromagnetic GaMnAs. We present new methods for calculating electronic states in low-dimensional semiconductor heterostructures based on the real-space Hamiltonian. The formalism provides extreme simplicity of the numerical implementation and superior accuracy of the results. They are applicable to a general n-band k · p model and specifically tested in the 6- and 8-band k · p models, and a simple parabolic one band model. The transparency of the new method allows us to investigate the origin and elimination of spurious solutions in the unified manner. Spurious solutions have long been a major issue in low- dimensional band structure calculations. As an application of nonlinear optical interactions in two-dimensional semiconductor heterostructures, we calculate the upper limits on the efficiency of the passive terahertz difference frequency generation based on the intersubband resonant nonlinearity. Our approach incorporates electronic states together with propagating coupled fields through the self-consistent calculation of the Poisson equation, density matrix equations, and coupled wave equations. We develop optimal device geometries and systematically study the device performance as a function of various parameters. The results are compared with a simplified analytic solution. The electronic version of this dissertation is accessible from http://hdl.handle.net/1969.1/152436
Download or read book Electronic States and Optical Transitions in Semiconductor Heterostructures written by Fedor T. Vasko and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theoretical basis and the relevant experimental knowledge underlying our present understanding of the electrical and optical properties of semiconductor heterostructures. Although such structures have been known since the 1940s, it was only in the 1980s that they moved to the forefront of research. The resulting structures have remarkable properties not shared by bulk materials. The text begins with a description of the electronic properties of various types of heterostructures, including discussions of complex band-structure effects, localised states, tunnelling phenomena, and excitonic states. The focus of the remainder of the book is on optical properties, including intraband absorption, luminescence and recombination, Raman scattering, subband optical transitions, nonlinear effects, and ultrafast optical phenomena. The concluding chapter presents an overview of some of the applications that make use of the physics discussed. Appendices provide background information on band structure theory, kinetic theory, electromagnetic modes, and Coulomb effects.
Download or read book III V Compound Semiconductors and Devices written by Keh Yung Cheng and published by Springer Nature. This book was released on 2020-11-08 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Download or read book Bands and Photons in III V Semiconductor Quantum Structures written by Igor Vurgaftman and published by Oxford University Press, USA. This book was released on 2021-01-03 with total page 689 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow.
Download or read book Properties of III V Quantum Wells and Superlattices written by P. K. Bhattacharya and published by IET. This book was released on 1996 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.
Download or read book Optical Properties of III V Semiconductors written by Heinz Kalt and published by Springer. This book was released on 2011-09-26 with total page 199 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley bandstructures for the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects such as screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. Consequently, the discussion of these features reflects such interdependencies with the dynamics of excitons and carriers resulting from intervalley coupling.
Download or read book Physics and Chemistry of III V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Download or read book Semiconductor Physics written by Karl W. Böer and published by Springer Nature. This book was released on 2023-02-02 with total page 1408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook gives a complete and detailed survey of the field of semiconductor physics. It addresses every fundamental principle, the most important research topics and results, as well as conventional and emerging new areas of application. Additionally it provides all essential reference material on crystalline bulk, low-dimensional, and amorphous semiconductors, including valuable data on their optical, transport, and dynamic properties. This updated and extended second edition includes essential coverage of rapidly advancing areas in semiconductor physics, such as topological insulators, quantum optics, magnetic nanostructures and spintronic systems. Richly illustrated and authored by a duo of internationally acclaimed experts in solar energy and semiconductor physics, this handbook delivers in-depth treatment of the field, reflecting a combined experience spanning several decades as both researchers and educators. Offering a unique perspective on many issues, Semiconductor Physics is an invaluable reference for physicists, materials scientists and engineers throughout academia and industry.
Download or read book State of the Art Program on Compound Semiconductors XXXVIII and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors III written by Edward B. Stokes and published by The Electrochemical Society. This book was released on 2003 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic and Optical Properties of Semiconductors written by Lok C. Lew Yan Voon and published by Universal-Publishers. This book was released on 1997-08 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt: This study is a theoretical investigation of the electronic and optical properties of intrinsic semiconductors using the orthogonal empirical tight binding model. An analysis of the bulk properties of semiconductors with the zincblende, diamond and rocksalt structures has been carried out. We have extended the work of others to higher order in the interaction integrals and derived new parameter sets for certain semiconductors which better fit the experimental data over the Brillouin zone. The Hamiltonian of the heterostructures is built up layer by layer from the parameters of the bulk constituents. The second part of this work examines a number of applications of the theory. We present a new microscopic derivation of the intervalley deformation potentials within the tight binding representation and computes a number of conduction-band deformation potentials of bulk semiconductors. We have also studied the electronic states in heterostructures and have shown theoretically the possibility of having barrier localization of above-barrier states in a multivalley heterostructure using a multiband calculation. Another result is the proposal for a new "type-II" lasing mechanism in short-period GaAs/AlAs superlattices. As for our work on the optical properties, a new formalism, based on the generalized Feynman-Hellmann theorem, for computing interband optical matrix elements has been obtained and has been used to compute the linear and second-order nonlinear optical properties of a number of bulk semiconductors and semiconductor heterostructures. In agreement with the one-band elective mass calculations of other groups, our more elaborate calculations show that the intersubband oscillator strengths of quantum wells can be greatly enhanced over the bulk interband values.
Download or read book Progress in Compound Semiconductors III Electronic and Optoelectronic Applications Volume 799 written by Daniel J. Friedman and published by . This book was released on 2004-04-07 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Optical Properties of III V Semiconductors written by Heinz Kalt and published by Springer. This book was released on 1996 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optical and electronic properties of semiconductors are strongly influenced by the different possibilities of carriers to be distributed among the various extrema of the band structure or the transfer between them. The monograph Optical Properties of III-V Semiconductors is concerned with the III-V bulk and low-dimensional semiconductors with the emphasis on the implications of multi-valley bandstructures on the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects like screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. The discussion of the latter features is presented self-consistently with the dynamics of excitons and carriers resulting from intervalley coupling.
Download or read book Advances in Materials Processing and Devices in III V Compound Semiconductors Volume 144 written by Devendra K. Sadana and published by Mrs Proceedings. This book was released on 1989-11-20 with total page 758 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book The Handbook of Photonics written by Mool C. Gupta and published by CRC Press. This book was released on 2018-10-03 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reflecting changes in the field in the ten years since the publication of the first edition, The Handbook of Photonics, Second Edition explores recent advances that have affected this technology. In this new, updated second edition editor Mool Gupta is joined by John Ballato, strengthening the handbook with their combined knowledge and the continued contributions of world-class researchers. New in the Second Edition: Information on optical fiber technology and the economic impact of photonics Coverage of emerging technologies in nanotechnology Sections on optical amplifiers, and polymeric optical materials The book covers photonics materials, devices, and systems, respectively. An introductory chapter, new to this edition, provides an overview of photonics technology, innovation, and economic development. Resting firmly on the foundation set by the first edition, this new edition continues to serve as a source for introductory material and a collection of published data for research and training in this field, making it the reference of first resort.
Download or read book Intersubband Transitions In Quantum Structures written by Roberto Paiella and published by McGraw Hill Professional. This book was released on 2010-05-05 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in epitaxial growth and nanofabrication technology in the past several years have made it possible to engineer sophisticated semiconductor quantum devices with unprecedented control of their electronic and optical properties. A particularly important class of such devices is based on intersubband transitions, i.e. optical transitions between quantized electronic states in semiconductor heterostructures. Most notably, mid-infrared quantum-well infrared photodetectors (QWIPs) and quantum cascade lasers nowadays offer superior performance for applications such as thermal imaging, spectroscopy, and biochemical sensing, and have recently become commercially available. Intersubband devices also have the potential for a revolutionary impact in the fields of silicon photonics, terahertz sensing, and ultra-high-bandwidth fiber-optic communications, and extensive research is ongoing to fulfill this promise. Joined by an international group of world experts, Paiella describes the basic device physics and applications of intersubband transitions, as well as the more recent and important developments in this exciting area of semiconductor nanotechnology.
Download or read book CVD of Compound Semiconductors written by Anthony C. Jones and published by John Wiley & Sons. This book was released on 2008-11-20 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.
Download or read book Impurities Confined in Quantum Structures written by Olof Holtz and published by Springer Science & Business Media. This book was released on 2004-08-24 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device performance in research laboratories. The modi?ed electronic structure of semiconductor quantum structures results in transport and optical properties, which di?er from those of constituent bulk materials. The possibility to tailor properties, such as bandgap, strain, band o?set etc. , of two-dimensional (2D) semiconductors, e. g. quantum wells, for speci?c purposes has had an extensive impact on the electronics, which has resulted in a dramatic renewal process. For instance, 2D structures are today used in a large number of high speed electronics and optoelectronic appli- tions (e. g. detectors, light emitting diodes, modulators, switches and lasers) and in daily life, in e. g. LED-based tra?c lights, CD-players, cash registers. The introduction of impurities, also in very small concentrations, in a semiconductor can change its optical and electrical properties entirely. This attribute of the semiconductor is utilized in the manifoldness of their app- cations. This fact constitutes the principal driving force for investigation of the properties of the impurities in semiconductors. While the impurities in bulk materials have been investigated for a long time, and their properties are fairly well established by now, the corresponding studies of impurities in quantum wells is a more recent research area.
