Download or read book Electronic Properties of Thin Film Semiconductor Interfaces written by Andreas Klein and published by . This book was released on 2003 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Download or read book Solid Surfaces Interfaces and Thin Films written by Hans Lüth and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 566 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. Compa- red to the earlier editions, which bore the title "Surfaces and Interfaces of Solid Materials", the book now places more emphasis on thin films, including also their superconducting and ferromagnetic properties. The present 4th edition thus presents techniques of preparing well-defined solid surfaces and interfaces, fundamental aspects of adsorption and layer growth, as well as basic models for the descripti- on of structural, vibronic and electronic properties of sur- faces, interfaces and thin films. Because of their importan- ce for modern information technology, significant attention is paid to the electronic properties of semiconductor inter- faces and heterostructures. Collective phenomena , such as superconductivity and ferromagnetism, also feature promi- nently. Experimental sections covering essential measurement and preparation techniques are presented in separate panels.
Download or read book Electronic and Optical Properties of Thin film Superconductors and Superconductor semiconductor Interfaces written by Igor Vladimirovich Roshchin and published by . This book was released on 2000 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Properties of Semiconductor Interfaces written by Winfried Monch and published by . This book was released on 2014-01-15 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Surfaces and Interfaces written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.
Download or read book Interface Controlled Organic Thin Films written by Horst-Günter Rubahn and published by Springer Science & Business Media. This book was released on 2009-06-12 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: Organic semiconductors are a central topic of advanced materials research. The book is aiming at bridging the gap between the development and production of devices and basic research on thin film characterisation using cutting-edge techniques in surface and interface science. Topics involve organic molecular-based sensors; interfaces in organic diodes and transistors; mobility in organic field effect transistors and space charge problems; integration of optoelectronic nanostructures; nonlinear optical properties of organic nanostructures; the wetting layer problem; how to get from functionalized molecules to nanoaggregates; optical, electrical and mechanical properties of organic nanofibers as well; as near field investigations of organic thin films.
Download or read book Field Effect in Semiconductor Electrolyte Interfaces written by Pavel P. Konorov and published by Princeton University Press. This book was released on 2021-01-12 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a state-of-the-art understanding of semiconductor-electrolyte interfaces. It provides a detailed study of semiconductor-electrolyte interfacial effects, focusing on the physical and electrochemical foundations that affect surface charge, capacitance, conductance, quantum effects, and other properties, both from the point of view of theoretical modeling and metrology. The wet-dry interface, where solid-state devices may be in contact with electrolyte solutions, is of growing interest and importance. This is because such interfaces will be a key part of hydrogen energy and solar cells, and of sensors that would have wide applications in medicine, genomics, environmental science, and bioterrorism prevention. The field effect presented here by Pavel Konorov, Adil Yafyasov, and Vladislav Bogevolnov is a new method, one that allows investigation of the physical properties of semiconductor and superconductor surfaces. Before the development of this method, it was impossible to test these surfaces at room temperature. The behavior of electrodes in electrolytes under such realistic conduction conditions has been a major problem for the technical realization of systems that perform measurements in wet environments. This book also describes some material properties that were unknown before the development of the field effect method. This book will be of great interest to students and engineers working in semiconductor surface physics, electrochemistry, and micro- and nanoelectronics.
Download or read book Surfaces and Interfaces of Solid Materials written by Hans Lüth and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: Surfaces and Interfaces of Solid Materials emphasises both experimental and theoretical aspects of surface and interface physics. Beside the techniques of preparing well-defined solid surfaces and interfaces basic models for the description of structural, vibronic and electronic properties of interfaces are described, as well as fundamental aspects of adsorption and layer growth. Because of its importance for modern microelectronics special emphasis is placed on the electronic properties of semiconductor interfaces and heterostructures. Experimental topics covering the basics of ultrahigh-vacuum technology, electron optics, surface spectroscopies and electrical interface characterization techniques are presented in the form of separate panels.
Download or read book Diamond Electronic Properties and Applications written by Lawrence S. Pan and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt: The use of diamond for electronic applications is not a new idea. As early as the 1920's diamonds were considered for their use as photoconductive detectors. However limitations in size and control of properties naturally limited the use of diamond to a few specialty applications. With the development of diamond synthesis from the vapor phase has come a more serious interest in developing diamond-based electronic devices. A unique combination of extreme properties makes diamond partiCularly well suited for high speed, high power, and high temperature applications. Vapor phase deposition of diamond allows large area films to be deposited, whose properties can potentially be controlled. Since the process of diamond synthesis was first realized, great progress have been made in understanding the issues important for growing diamond and fabricating electronic devices. The quality of both intrinsic and doped diamond has improved greatly to the point that viable applications are being developed. Our understanding of the properties and limitations has also improved greatly. While a number of excellent references review the general properties of diamond, this volume summarizes the great deal of literature related only to electronic properties and applications of diamond. We concentrate only on diamond; related materials such as diamond-like carbon (DLC) and other wide bandgap semiconductors are not treated here. In the first chapter Profs. C. Y. Fong and B. M. Klein discuss the band structure of single-crystal diamond and its relation to electronic properties.
Download or read book Energy Level Control at Hybrid Inorganic Organic Semiconductor Interfaces written by Raphael Schlesinger and published by Springer. This book was released on 2016-11-21 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.
Download or read book Thin Films On Silicon Electronic And Photonic Applications written by Vijay Narayanan and published by World Scientific. This book was released on 2016-08-15 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted.
Download or read book Proceedings Electrical and optical properties of thin film semiconductors written by György Szigeti and published by . This book was released on 1971 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Structure of Metal Semiconductor Contacts written by Winfried Mönch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-
Download or read book Photoelectrochemical Analysis of Thin Semiconductor Films written by Johanes Handoko Sukamto and published by . This book was released on 1993 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Interfaces Formation and Properties written by Guy LeLay and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 399 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.
Download or read book Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures written by J.M. Chamberlain and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis was on fundamental physics, a series of supporting lectures described the underlying technology (Molecular Beam Epitaxy, Metallo-Organic Chemical Vapour Deposition, Electron Beam Lithography and other advanced processing technologies). Actual and potential applications of low dimensional structures in optoelectronic and high frequency devices were also discussed. The ASI took the form of a series of lectures of about fifty minutes' duration which were given by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were presented in two lively poster sessions. The ASl emphasised the impressive way in which this research field has developed through the fruitful interaction of theory, experiment and semiconductor device technology. Many of the talks demonstrated both the effectiveness and limitations of semiclassical concepts in describing the quantum phenomena exhibited by electrons in low dimensional structures.
