Download or read book Electronic Properties of Grain Boundaries in Silicon written by Douglas J. Thomson and published by . This book was released on 1983 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Properties of Grain Boundaries in Silicon written by Douglas J. Thomson and published by . This book was released on 1983 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Polycrystalline Semiconductors written by Hans J. Möller and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 399 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the most recent aspects of polycrystalline semiconductors as presented at the conference Polycrystalline Semiconductors - Grain Boundaries and Interfaces. It contains 12 review articles on selected topics written by experts in their fields and 41 complementary contributed papers. The structure, chemistry and physics of grain boundaries and other interfaces are experimentally and theoretically studied. Aspects of the technologically important polycrystalline silicon are discussed in detail. Also covered are other polycrystalline semiconductors, germanium and compound semiconductors, that are currently of interest in fundamental research and in the technology of solar cells and thin film devices. Anyone interested in polycrystalline semiconductors will be able to use this comprehensive collection to advantage. It also suggests directions for new research and development.

Download or read book Electronic Properties of Silicon Grain Boundaries written by and published by . This book was released on 1980 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Polycrystalline silicon is a clean and relatively simple prototype of electronic ceramics. The theory of the electrostatic barriers which form at silicon grain boundaries will be discussed. The use of experimental conductance and capacitance measurements to obtain the barrier height and energy density of grain boundary states will be illustrated.

Download or read book Chemical and Electrical Properties of Grain Boundaries in Polycrystalline Silicon written by Phillip Eugene Russell and published by Sagwan Press. This book was released on 2018-02-07 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.

Download or read book Electrically Inactive Poly silicon Grain Boundaries written by and published by . This book was released on 1996 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: Structures, energies, and electronic properties of symmetric [001] tilt grain boundaries in Si have been studied using Stillinger-Weber and Tersoff classical potentials, and semi-empirical (tight-binding) electronic structure methods. The calculated lowest energy (310) grain boundary structure and electronic properties are consistent with previous TEM measurement and calculations. For the controversial (710) grain boundaries, the tight-binding calculations do not show any electronic energy levels in the band gap. This indicates that with every atom fully fourfold coordinated, the (710) grain boundary should be electrically inactive. Some high-energy metastable grain boundaries were found to be electrically active by the presence of the levels introduced in the band gap. Also, the vacancy concentration at the (310) GB was found to be enhanced by many orders of magnitude relative to bulk. The dangling bond states of the vacancies should be electrically active.

Download or read book Chemical and Electrical Properties of Grain Boundaries in Polycrystalline Silicon Primary Source Edition written by Phillip Eugene Russell and published by Nabu Press. This book was released on 2013-10-01 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a reproduction of a book published before 1923. This book may have occasional imperfections such as missing or blurred pages, poor pictures, errant marks, etc. that were either part of the original artifact, or were introduced by the scanning process. We believe this work is culturally important, and despite the imperfections, have elected to bring it back into print as part of our continuing commitment to the preservation of printed works worldwide. We appreciate your understanding of the imperfections in the preservation process, and hope you enjoy this valuable book.

Download or read book Electrical Properties of Grain Boundaries and Dislocations in Crystalline Silicon written by Yongkook Park and published by . This book was released on 2009 with total page 113 pages. Available in PDF, EPUB and Kindle. Book excerpt: Keywords: electronic structure of silicon grain boundary, retention of impurity at dislocations, hydrogen segregation, thermal dissociation kinetics, impurity gettering, electrical activity of dislocations, hydrogen passivation, carrier recombination activity, multi-crystalline silicon solar cells.

Download or read book Effect of grain boundaries on electrical properties of polycrystalline silicon written by Shubneesh Batra and published by . This book was released on 1989 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Handbook of Photovoltaic Silicon written by Deren Yang and published by Springer. This book was released on 2019-11-28 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..

Download or read book The Study of Grain Boundaries in Polycrystalline Thin film Solar Cells written by Bingrui Joel Li and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon is one of the most studied semiconductor materials with techniques to control and manipulate its properties well established by the integrated circuit (IC) industry. While silicon wafer-based technology constitutes about 85% of the photovoltaics (PV) market, there are compelling reasons to develop thin-film solar cells. These include potential material cost and energy savings achievable with thin absorber layers of direct band-gap thin film materials, and the potential for incorporation of thin film PV onto inexpensive, flexible, or building material substrates, which opens up the possibility of new applications. Given the success of silicon wafer-based solar cells in the PV market, crystalline silicon on glass is a natural choice for thin-film PV technology. However, the efficiency of this technology is still too low to compete in the PV market. In fact, its record efficiency is only 10.5% which was achieved by CSG Solar. In order to boost the efficiency of this technology, we explore the use of ion-beam assisted deposition (IBAD) to create biaxially-textured silicon films which can potentially have less defects at the grain boundaries. Experimentally, we have fabricated an operational biaxially-textured silicon solar cell whose Voc is likely to have been affected by intra-grain defects as shown by our transmission electron microscopy (TEM) image. In order to investigate the interplay between grain boundary and intra-grain defects on solar cell performance and determine the potential benefits of developing biaxially-textured film solar cells, I used Synopsys' two-dimensional technology computer-aided design (TCAD) Sentaurus simulation tool. In general, the simulations found that biaxially-textured silicon solar cells improve solar cell efficiencies but there is small improvement for devices that have both large grains and low intra-grain carrier lifetime. Among the various thin-film technologies, CdTe and Cu(In, Ga)(S, Se)2 (CIGSSe), dominate the thin-film PV market. However in recent years, the photovoltaic community has seen growing interest in CZTS-based thin-film solar cells which include Cu2ZnSnS4 (CZTS), Cu2ZnSnSe4 (CZTSe) and Cu2ZnSn(S, Se)4 (CZTSSe) solar cells. This is driven by their potential to replace Cu(In, Ga)Se2 (CIGSe) and CdTe solar cells which face material scarcity, toxicity and market acceptance issues. In polycrystalline CIGSe-based (CIGSe, CISe, CuGaSe2 (CGSe)) and CdTe solar cells, grain boundaries do not seem to affect solar cell efficiency as much. In fact, some studies have identified grain boundaries as the source of high efficiency in polycrystalline CIGSe-based and CdTe solar cells. CIGSe-based and CZTS-based films are similar in terms of growth methods, optoelectronic and crystallographic properties. Because of these similarities and the benign nature of grain boundaries in CIGSe-based and CdTe films, it would be useful to examine the properties of grain boundaries in these materials. Using scanning Kelvin probe microscopy (SKPM) and conductive atomic force microscopy (C-AFM) techniques, I investigated the electronic properties of grain boundaries in CIGSe, CZTS and CZTSSe solar cells. SKPM measurements carried out in this work reveal a higher positive surface potential at the grain boundaries as compared to the grain while C-AFM measurements show higher current flow in the vicinity of the grain boundaries. These two measurement results are similar to those obtained for high quality CIGSe and CdTe and together they demonstrate the enhanced minority carrier collection taking place at the grain boundaries of CZTS and CZTSSe. Although SKPM measurement are susceptible to topographical and geometric effects, we believe that this effect is not dominating in our measurements as topography and surface potential profile lines are not exact mirror images of one another and regions of similar height have different potentials and vice versa. Nonetheless, I used a technique that involves photoreduction of AgNO3 to provide convincing evidence that our SKPM result is not a result of experimental artifacts but is truly indicative of the higher positive potential at the grain boundary. Having benign or beneficial grain boundaries have been found to be essential for achieving high efficiencies in polycrystalline CIGSe and CdTe solar cells. In my investigation, I found that high efficiency CZTS and CZTSSe solar cells have similar grain boundary electronic properties as high efficiency CIGSe and CdTe solar cells. As such, it might be possible for CZTS and CZTSSe solar cells to achieve similar high efficiencies as CIGSe and CdTe solar cells if other defects (intra-grain, surface and interfacial) are not limiting efficiencies.

Download or read book Influence of Grain Boundaries on the Electrical Properties of Polycrystalline silicon Films Progress Report 1980 1981 written by and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Research in 1980/81 was carried out in three areas: (i) electron diffraction experiments on diffusion bonded (welded) boundaries; (ii) combined EBIC and high voltage transmission electron microscopy in order to investigate the correlation between structure and electrical properties and (iii) passivation of the electrical activity of crystal defects with hydrogen. The diffraction experiments did not furnish new information on the structure of grain boundaries in silicon, but were valuable as a check on the previous findings. In addition, they offered the possibility to separate double diffraction effects from boundary scattering. The combined EBIC and HVTEM experiments established (for the first time) unambiguously that coherent twin boundaries per se are not electrically active. The localized electrical activity observed in coherent twin boundaries is due to the presence of intrinsic dislocations, which are partial dislocations of the Schottky type. However, not all partial dislocations studied were electrically active, for reasons which are not completely understood. The combined EBIC and HVTEM investigations showed further (again for the first time) that many of the linear boundaries which were previously assumed to be coherent twin boundaries are second order twins, and that these twins are strongly electrically active. In passivation experiments, it is necessary to separate influence of the heat treatment from those of hydrogen. Passivation reduces the activity of some, but not of all defects. Passivation is particularly effective in reducing the electrical activity of deformation induced dislocations, which conceivably have a different core structure from grown-in dislocations.

Download or read book Grain Boundaries written by P. E. J. Flewitt and published by Wiley. This book was released on 2001-04-11 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over recent years the understanding of grain boundaries, interphase boundaries and free surfaces has advanced greatly, leading to a clear recognition that these discontinuities make a significant contribution to the physical and mechanical properties of materials from multiphase metals and alloys to electronic materials. Grain Boundaries -Their Microstructure and Chemistry discusses the interrelationship between microstructure and chemistry of the grain boundary, with particular emphasis on the influence of the environment (air, liquid and liquid metal) and composition (bulk and impurity). This highly practical volume presents a brief background to interphase and grain boundaries, before considering in detail grain boundary composition and composition changes, and how grain boundary composition affects material properties. Very recent advances in techniques such as electron energy loss spectroscopy, high-resolution transmission electron microscopy and atom probe, and the facinating new insights into grain boundary, microstructure that they have revealed, are also discussed. Grain Boundaries - Their Microstructure and Chemistry is an indispensable text for design and safety engineers in many industries, including power and aerospace, as well as for materials scientists and engineers in academia and research institutes.

Download or read book Grain Boundaries in Silicon Solar Cells written by and published by . This book was released on 1982 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The correlations between the electrical and compositional properties of grain boundaries in polycrystalline silicon (Si) are examined in detail. High-resolution surface analysis techniques (AES, SIMS, XPS, EELS) and microelectrical (SAM, EBIC, minority-carrier lifetime) characterization methods are used. The direct evidence for impurity segregation to the intergrain regions is presented. Effect of illumination on the grain boundary electrical characteristics are correlated with impurity compositions. Finally, the interrelationships among heat-treatment, oxygen segregation and grain boundary electrical activity are discussed.

Download or read book Atomic and Electronic Structure of Grain Boundaries in Silicon written by Anthony T. Paxton and published by . This book was released on 1987 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Grain Boundaries in Metals and Semiconductors written by L. K. Fionova and published by . This book was released on 1993 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Silicon written by Paul Siffert and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.