Download or read book Electronic properties and device applications of GaAs AlGaAs quantum barrier and quantum well heterostructures written by Alice R. Bonnefoi and published by . This book was released on 1989 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Properties and Device Applications of GaAs Al Subscript X GA Subscript 1 x AS Quantum Barrier and Quantum Well Heterostructures written by Alice Renee Bonnefoi and published by . This book was released on 1987 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaAs and Related Materials written by Sadao Adachi and published by World Scientific. This book was released on 1994 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials. A complete set of the material properties are considered in this book. They are structural properties; thermal properties; elastic and lattice vibronic properties; collective effects and some response characteristics; electronic energy-band structure and consequences; optical, elasto-optic, and electro-optic properties; and carrier transport properties. This book attempts to summarize, in graphical and tabular forms, most of the important theoretical and experimental results on these material properties. It contains a large number of references useful for further study. Timely topics are discussed as well. This book will be of interest to graduate students, scientists and engineers working on semiconductors.
Download or read book Quantum Wells written by Alexander Y. Shik and published by World Scientific. This book was released on 1997-01-01 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt: This invaluable book is devoted to the physics, technology and device applications of semiconductor structures with ultrathin layers where the electronic properties are governed by the quantum-mechanical laws. Such structures called quantum wells or structures with the two-dimensional electron gas, have become one of the most actively investigated objects in modern solid state physics. Electronic properties of quantum wells differ dramatically from those of bulk semiconductors, which allows one to observe new types of physical phenomena, such as the quantum Hall effect and many other so-far-unknown kinetic and optical effects. This, in turn, offers wide opportunities for creating semiconductor devices based on new principles, and it has give birth to the new branch of electronics called nanoelectronics.
Download or read book GaAs High Speed Devices written by C. Y. Chang and published by Wiley-Interscience. This book was released on 1994-09-30 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Download or read book Strained Layer Quantum Wells and Their Applications written by M. O. Manasreh and published by CRC Press. This book was released on 1997-12-23 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.
Download or read book Semiconductor Quantum Well Intermixing written by J. T. Lie and published by CRC Press. This book was released on 2000-01-18 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure
Download or read book Physics and Applications of Quantum Wells and Superlattices written by E.E. Mendez and published by Springer. This book was released on 1987 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the lectures delivered at the NATO Advanced Study Institute on "Physics and Applications of Quantum Wells and Superlattices", held in Erice, Italy, on April 21-May 1, 1987. This course was the fourth one of the International School of Solid-State Device Research, which is under the auspices of the Ettore Majorana Center for Scientific Culture. In the last ten years, we have seen an enormous increase in re search in the field of Semiconductor Heterostructures, as evidenced by the large percentage of papers presented in recent international conferences on semiconductor physics. Undoubtfully, this expansion has been made possible by dramatic advances in materials preparation, mostly by molecular beam epitaxy and organometallic chemical vapor deposition. The emphasis on epitaxial growth that was prevalent at the beginning of the decade (thus, the second course of the School, held in 1983, was devoted to Molecular Beam Epitaxy and Heterostructures) has given way to a strong interest in new physical phenomena and new material structures, and to practical applications that are already emerging from them.
Download or read book Electronic States and Optical Properties of GAAS Aigaas and Gainp Algainp Quantum Wells written by Ying Huang and published by Open Dissertation Press. This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Electronic states and optical properties of GaAs/AIGaAs and GaInP/AlGaInP quantum wells" by Ying, Huang, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled ELECTRONIC STATES AND OPTICAL PROPERTIES OF GaAs/AlGaAs AND GaInP/AlGaInP QUANTUM WELLS submitted by Huang Ying for the Degree of Master of Philosophy at The University of Hong Kong in December 2004 GaAs is a representative base material in III-V compound family while GaInP is an important direct gap compound emitting red color light. Almost lattice matched GaInP epilayer can be grown on GaAs. Both materials have been widely applied in optoelectronic and microelectronic devices. For this thesis project, the electronic and optical properties of specially designed GaAs/AlGaAs and GaInP /AlGaInP multiple quantum wells (MQWs) were studied. For the GaAs/AlGaAs MQWs consisting of alternative asymmetric two wells, strongly enhanced optical transitions associated with the nearby or above-the-barrier states were observed with low-temperature photoluminescence (PL) technique. Simple but effective transfer matrix method was used to calculate the energy levels and envelope wave functions within the wells and above the barriers. Starting from the obtained energy levels and corresponding wave functions, the oscillator strengths of various transitions were estimated. The results show that Fano-type resonance leads to the clear enhancement of optical transitions associated with the above-barrier states. For the GaInP, AlGaInP epilayers and GaInP /AlGaInP MQWs grown on GaAs 2 2 substrates using all solid-state sources, an interesting phenomenon, namely ultraviolet laser light induced metastability, was observed. It was found that as the exposure time of the ultraviolet laser increased, the intensity of the low-temperature PL exponentially decreased. However, when the aluminum concentration of the epilayers was high enough, the phenomenon became unobservable. It was also found that the phenomenon is excitation-photon-energy dependent. Analysis suggests that the activation of the midgap deep centers in the materials under illumination of UV light is likely responsible for this metastability phenomenon. In addition, efficient anti-Stokes photoluminescence was observed in the GaInP epilayer at low temperature. DOI: 10.5353/th_b3147982 Subjects: Gallium arsenide Compound semiconductors Quantum wells
Download or read book Electronic Properties of GaAs AlGaAs Multiple Quantum Wells written by Ying Fu and published by . This book was released on 1990 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electronic Properties of GaAs AlGaAs Multiple Quantum Wells written by and published by . This book was released on 1990 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductor Interfaces Microstructures and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 1993-01-01 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt: A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices. Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.
Download or read book Electrical and Electronic Devices Circuits and Materials written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.
Download or read book Confined Electrons and Photons written by Elias Burstein and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: The optical properties of semiconductors have played an important role since the identification of semiconductors as "small" bandgap materials in the thinies, due both to their fundamental interest as a class of solids baving specific optical propenies and to their many important applications. On the former aspect we can cite the fundamental edge absorption and its assignment to direct or indirect transitions, many-body effects as revealed by exciton formation and photoconductivity. On the latter aspect, large-scale applications sucb as LEDs and lasers, photovoltaic converters, photodetectors, electro-optics and non-linear optic devices, come to mind. The eighties saw a revitalization of the whole field due to the advent of heterostructures of lower-dimensionality, mainly two-dimensional quantum wells, which through their enhanced photon-matter interaction yielded new devices with unsurpassed performance. Although many of the basic phenomena were evidenced through the seventies, it was this impact on applications which in turn led to such a massive investment in fabrication tools, thanks to which many new structures and materials were studied, yielding funher advances in fundamental physics.
Download or read book The Electronic and Optical Properties of GaAs AlGaAs Quantum Wells written by Robert Eppenga and published by . This book was released on 1988 with total page 121 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Theory of the Electronic and Optical Properties of GaAs AlGaAs Quantum Wells Under Uniaxial Stress written by Georg Rau and published by . This book was released on 1998 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research in Progress written by and published by . This book was released on 1992 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
