Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book Handbook for III V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Download or read book Physical Properties of III V Semiconductor Compounds written by Sadao Adachi and published by John Wiley & Sons. This book was released on 1992-11-10 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.

Download or read book Physics of Hot Electron Transport in Semiconductors written by Chin Sen Ting and published by World Scientific. This book was released on 1992 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.

Download or read book Materials and Reliability Handbook for Semiconductor Optical and Electron Devices written by Osamu Ueda and published by Springer Science & Business Media. This book was released on 2012-09-22 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

Download or read book Electrical and Electronic Devices Circuits and Materials written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.

Download or read book Electron Molecule Interactions and Their Applications written by L. G. Christophorou and published by Academic Press. This book was released on 2013-10-22 with total page 695 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron-Molecule Interactions and Their Applications, Volume 2 provides a balanced and comprehensive account of electron-molecule interactions in dilute and dense gases and liquid media. This book consists of six chapters. Chapter 1 deals with electron transfer reactions, while Chapter 2 discusses electron-molecular positive-ion recombination. The electron motion in high-pressure gases and electron-molecule interactions from single- to multiple-collision conditions is deliberated in Chapter 3. In Chapter 4, knowledge on electron-molecule interactions in gases is linked to that on similar processes in the liquid state. Selected examples on the translation of the results of basic research on electron-molecule interactions to application are reviewed in Chapter 5. The last chapter covers the electron affinity of molecules, atoms, and radicals. This volume is a good reference for students and researchers conducting work on the intricate ways electrons and molecules interact in their encounters.

Download or read book Introduction to Solid State Electronics written by F.F.Y. Wang and published by Elsevier. This book was released on 2012-12-02 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook is specifically tailored for undergraduate engineering courses offered in the junior year, providing a thorough understanding of solid state electronics without relying on the prerequisites of quantum mechanics. In contrast to most solid state electronics texts currently available, with their generalized treatments of the same topics, this is the first text to focus exclusively and in meaningful detail on introductory material. The original text has already been in use for 10 years. In this new edition, additional problems have been added at the end of most chapters. These problems are meant not only to review the material covered in the chapter, but also to introduce some aspects not covered in the text.An amended Solutions Manual is in preparation.

Download or read book Catalytic Chemical Vapor Deposition written by Hideki Matsumura and published by John Wiley & Sons. This book was released on 2019-02-08 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: The authoritative reference on catalytic chemical vapor deposition, written by the inventor of the technology. This comprehensive book covers a wide scope of Cat-CVD and related technologies from the fundamentals to the many applications, including the design of a Cat-CVD apparatus. Featuring contributions from four senior leaders in the field, including the father of catalytic chemical vapor deposition, it also introduces some of the techniques used in the observation of Cat-CVD related phenomena so that readers can understand the concepts of such techniques. Catalytic Chemical Vapor Deposition: Technology and Applications of Cat-CVD begins by reviewing the analytical tools for elucidating the chemical reactions in Cat-CVD, such as laser-induced fluorescence and deep ultra-violet absorption, and explains in detail the underlying physics and chemistry of the Cat-CVD technology. Subsequently it provides an overview of the synthesis and properties of Cat-CVD-prepared inorganic and organic thin films. The last parts of this unique book are devoted to the design and operation of Cat-CVD apparatuses and the applications. Provides coherent coverage of the fundamentals and applications of catalytic chemical vapor deposition (Cat-CVD) Assembles in one place the state of the art of this rapidly growing field, allowing new researchers to get an overview that is difficult to obtain solely from journal articles Presents comparisons of different Cat-CVD methods which are usually not found in research papers Bridges academic and industrial research, showing how CVD can be scaled up from the lab to large-scale industrial utilization in the high-tech industry. Catalytic Chemical Vapor Deposition: Technology and Applications is an excellent one-stop resource for researchers and engineers working on or entering the field of Cat-CVD, Hot-Wire CVD, iCVD, and related technologies.

Download or read book Strongly Coupled Plasma Physics written by S. Ichimaru and published by Elsevier. This book was released on 2012-12-02 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: Charged particles in dense matter exhibit strong correlations due to the exchange and Coulomb interactions, and thus make a strongly coupled plasma. Examples in laboratory and astrophysical settings include solid and liquid metals, semiconductors, charged particles in lower dimensions such as those trapped in interfacial states of condensed matter or beams, dense multi-ionic systems such a superionic conductors and inertial-confinement-fusion plasmas . The aim of the conference was to elucidate the various physical processes involved in these dense materials. The subject areas covered include plasma physics, atomic and molecular physics, condensed matter physics and astrophysics.

Download or read book The Dopant Density and Temperature Dependence of Electron Mobility and Resistivity in N type Silicon written by Sheng S. Li and published by . This book was released on 1977 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Micro and Nanoelectronics Devices Circuits and Systems written by Trupti Ranjan Lenka and published by Springer Nature. This book was released on 2023-10-04 with total page 519 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents select proceedings of the International Conference on Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS-2023). The book includes cutting-edge research papers in the emerging fields of micro and nanoelectronics devices, circuits, and systems from experts working in these fields over the last decade. The book is a unique collection of chapters from different areas with a common theme and is immensely useful to academic researchers and practitioners in the industry who work in this field.

Download or read book Semiconductors Dielectrics and Metals for Nanoelectronics 12 written by S. Kar and published by The Electrochemical Society. This book was released on 2014 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Emerging Devices for Low Power and High Performance Nanosystems written by Simon Deleonibus and published by CRC Press. This book was released on 2018-12-13 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: The history of information and communications technologies (ICT) has been paved by both evolutive paths and challenging alternatives, so-called emerging devices and architectures. Their introduction poses the issues of state variable definition, information processing, and process integration in 2D, above IC, and in 3D. This book reviews the capabilities of integrated nanosystems to match low power and high performance either by hybrid and heterogeneous CMOS in 2D/3D or by emerging devices for alternative sensing, actuating, data storage, and processing. The choice of future ICTs will need to take into account not only their energy efficiency but also their sustainability in the global ecosystem.

Download or read book ULSI Process Integration 6 written by C. Claeys and published by The Electrochemical Society. This book was released on 2009-09 with total page 547 pages. Available in PDF, EPUB and Kindle. Book excerpt: ULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).

Download or read book Gas Discharge and Gas Insulation written by Dengming Xiao and published by Springer. This book was released on 2015-10-01 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a comprehensive overview of research on environmentally friendly insulating gases, in response to the urgent calls for developing alternatives to SF6 due to the increasing awareness of the threat it poses as a greenhouse gas. It covers gas dielectrics, SF6 and its mixtures, and potential alternative gases, providing fundamental information on gas discharge and gas insulation and especially focusing on the development of new environmentally friendly insulating gases over the last decade. The book begins by describing the insulating and arcing characteristics of SF6, followed by an introduction to the gas dielectrics performance of SF6 gas mixtures with buffer gases. The latest findings on new environmentally friendly insulating gases are described in detail, and suggestions for practical application are also provided. Graduate students and teachers involved in high-voltage and insulation engineering can use the book as teaching material. Researchers working in plasma science, laser action and related applied physics fields can also benefit from the book’s analytical approach and detailed data; engineers from the fields of electric power operation systems and electrical manufacturing will find it a valuable reference work for solving practical problems.

Download or read book Functional Phthalocyanine Molecular Materials written by Jianzhuang Jiang and published by Springer. This book was released on 2010-02-02 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: Phthalocyanines exhibit intriguing physic-chemical properties that render them important as a class of molecular functional materials. In addition to their traditional applications as dyes and pigments, more recently their use as the organic semiconductors, photodynamic therapy medicines, non-linear optical materials, catalysts for the photo oxidation, optical recording materials, and gas sensors attracts great research interests in these tetrapyrrole species.