Download or read book Electron Devices Meeting 2007 IEDM 2007 IEEE International written by and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Memristor Networks written by Andrew Adamatzky and published by Springer Science & Business Media. This book was released on 2013-12-18 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Using memristors one can achieve circuit functionalities that are not possible to establish with resistors, capacitors and inductors, therefore the memristor is of great pragmatic usefulness. Potential unique applications of memristors are in spintronic devices, ultra-dense information storage, neuromorphic circuits and programmable electronics. Memristor Networks focuses on the design, fabrication, modelling of and implementation of computation in spatially extended discrete media with many memristors. Top experts in computer science, mathematics, electronics, physics and computer engineering present foundations of the memristor theory and applications, demonstrate how to design neuromorphic network architectures based on memristor assembles, analyse varieties of the dynamic behaviour of memristive networks and show how to realise computing devices from memristors. All aspects of memristor networks are presented in detail, in a fully accessible style. An indispensable source of information and an inspiring reference text, Memristor Networks is an invaluable resource for future generations of computer scientists, mathematicians, physicists and engineers.

Download or read book Silicon On Insulator SOI Technology written by O. Kononchuk and published by Elsevier. This book was released on 2014-06-19 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. Covers SOI transistors and circuits, as well as manufacturing processes and reliability Looks at applications such as memory, power devices, and photonics

Download or read book Carbon Nanotubes for Interconnects written by Aida Todri-Sanial and published by Springer. This book was released on 2016-07-09 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference on the use of carbon nanotubes (CNTs) as interconnect material for horizontal, on-chip and 3D interconnects. The authors demonstrate the uses of bundles of CNTs, as innovative conducting material to fabricate interconnect through-silicon vias (TSVs), in order to improve the performance, reliability and integration of 3D integrated circuits (ICs). This book will be first to provide a coherent overview of exploiting carbon nanotubes for 3D interconnects covering aspects from processing, modeling, simulation, characterization and applications. Coverage also includes a thorough presentation of the application of CNTs as horizontal on-chip interconnects which can potentially revolutionize the nanoelectronics industry. This book is a must-read for anyone interested in the state-of-the-art on exploiting carbon nanotubes for interconnects for both 2D and 3D integrated circuits.

Download or read book Fabless Semiconductor Manufacturing written by Chinmay K. Maiti and published by CRC Press. This book was released on 2022-11-17 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.

Download or read book NAND Flash Memory Technologies written by Seiichi Aritome and published by John Wiley & Sons. This book was released on 2015-12-01 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offers a comprehensive overview of NAND flash memories, with insights into NAND history, technology, challenges, evolutions, and perspectives Describes new program disturb issues, data retention, power consumption, and possible solutions for the challenges of 3D NAND flash memory Written by an authority in NAND flash memory technology, with over 25 years’ experience

Download or read book Handbook of Memristor Networks written by Leon Chua and published by Springer Nature. This book was released on 2019-11-12 with total page 1368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Handbook presents all aspects of memristor networks in an easy to read and tutorial style. Including many colour illustrations, it covers the foundations of memristor theory and applications, the technology of memristive devices, revised models of the Hodgkin-Huxley Equations and ion channels, neuromorphic architectures, and analyses of the dynamic behaviour of memristive networks. It also shows how to realise computing devices, non-von Neumann architectures and provides future building blocks for deep learning hardware. With contributions from leaders in computer science, mathematics, electronics, physics, material science and engineering, the book offers an indispensable source of information and an inspiring reference text for future generations of computer scientists, mathematicians, physicists, material scientists and engineers working in this dynamic field.

Download or read book Stress and Strain Engineering at Nanoscale in Semiconductor Devices written by Chinmay K. Maiti and published by CRC Press. This book was released on 2021-06-29 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.

Download or read book Phase Change Memory written by Naveen Muralimanohar and published by Springer Nature. This book was released on 2022-05-31 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions to enable PCM for main memories. Finally, the authors explore the impact of such byte-addressable non-volatile memories on future storage and system designs. Table of Contents: Next Generation Memory Technologies / Architecting PCM for Main Memories / Tolerating Slow Writes in PCM / Wear Leveling for Durability / Wear Leveling Under Adversarial Settings / Error Resilience in Phase Change Memories / Storage and System Design With Emerging Non-Volatile Memories

Download or read book Frontiers In Electronics Selected Papers From The Workshop On Frontiers In Electronics 2013 Wofe 2013 written by Sorin Cristoloveanu and published by World Scientific. This book was released on 2014-12-15 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book brings together 11 invited papers from the Workshop on Frontiers in Electronics (WOFE) 2013 that took place at San Juan, Puerto Rico, in December 2013. These articles present the ground-breaking works by world leading experts from CMOS and SOI, to wide-bandgap semiconductor technology, terahertz technology, and bioelectronics.WOFE is a bi-annual gathering of leading researchers from around the world, across multiple disciplines, to share their results and discuss key issues in the future development of microelectronics, photonics, and nanoelectronics.The focus of this volume includes topics ranging from advanced transistors: TFT, FinFET, TFET, HEMT to Nitride devices, as well as emerging technologies, devices and materials.This book will be a useful reference for scientists, engineers, researchers, and inventors looking for the future research and development direction of microelectronics, and the trends and technology underpinning these developments.

Download or read book Analyse et caract risation des couplages substrat et de la connectique dans les written by Fengyuan Sun and published by Editions Publibook. This book was released on 2016-09-09 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proposal of doubling the number of transistors on an IC chip (with minimum costs and subtle innovations) every 24 months by Gordon Moore in 1965 (the so-called called Moore's law) has been the most powerful driver for the emphasis of the microelectronics industry in the past 50 years. This law enhances lithography scaling and integration, in 2D, of all functions on a single chip, increasingly through system-on-chip (SOC). On the other hand, the integration of all these functions can be achieved through 3D integrations . Generally speaking, 3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and mostly the TSV (through-silicon via) separates 3D IC packaging from 3D IC/Si integrations since the latter two uses TSVs, but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D IC/Si integrations. Continued technology scaling together with the integration of disparate technologies in a single chip means that device performance continues to outstrip interconnect and packaging capabilities, and hence there exist many difficult engineering challenges, most notably in power management, noise isolation, and intra and inter-chip communication. 3D Si integration is the right way to go and compete with Moore's law (more than Moore versus more Moore). However, it is still a long way to go. In this book, Fengyuan SUN proposes new substrate network extraction techniques. Using this latter, the substrate coupling and loss in IC's can be analyzed. He implements some Green/TLM (Transmission Line Matrix) algorithms in MATLAB. It permits to extract impedances between any number of embedded contacts or/and TSVS. He does investigate models of high aspect ratio TSV, on both analytical and numerical methods electromagnetic simulations. This model enables to extract substrate and TSV impedance, S parameters and parasitic elements, considering the variable resistivity of the substrate. It is full compatible with SPICE-like solvers and should allow an investigation in depth of TSV impact on circuit performance.

Download or read book Nanoscale CMOS written by Francis Balestra and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.

Download or read book MOS Interface Physics Process and Characterization written by Shengkai Wang and published by CRC Press. This book was released on 2021-10-05 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt: The electronic device based on Metal Oxide Semiconductor (MOS) structure is the most important component of a large-scale integrated circuit, and is therefore a fundamental building block of the information society. Indeed, high quality MOS structure is the key to achieving high performance devices and integrated circuits. Meanwhile, the control of interface physics, process and characterization methods determine the quality of MOS structure. This book tries to answer five key questions: Why are high-performance integrated circuits bonded together so closely with MOS structure? Which physical phenomena occur in MOS structure? How do these phenomena affect the performance of MOS structure? How can we observe and quantify these phenomena scientifically? How to control the above phenomena through process? Principles are explained based on common experimental phenomena, from sensibility to rationality, via abundant experimental examples focusing on MOS structure, including specific experimental steps with a strong level of operability. This book will be an essential reference for engineers in semiconductor related fields and academics and postgraduates within the field of microelectronics.

Download or read book DC and RF Characterization of NiSi Schottky Barrier MOSFETs with Dopant Segregation written by Christoph Johannes Urban and published by Forschungszentrum Jülich. This book was released on 2010 with total page 169 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Applications of Emerging Memory Technology written by Manan Suri and published by Springer. This book was released on 2019-07-16 with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book intends to bring under one roof research work of leading groups from across the globe working on advanced applications of emerging memory technology nanodevices. The applications dealt in the text will be beyond conventional storage application of semiconductor memory devices. The text will deal with material and device physical principles that give rise to interesting characteristics and phenomena in the emerging memory device that can be exploited for a wide variety of applications. Applications covered will include system-centric cases such as – caches, NVSRAM, NVTCAM, Hybrid CMOS-RRAM circuits for: Machine Learning, In-Memory Computing, Hardware Security - RNG/PUF, Biosensing and other misc beyond storage applications. The book is envisioned for multi-purpose use as a textbook in advanced UG/PG courses and a research text for scientists working in the domain.

Download or read book High Permittivity Gate Dielectric Materials written by Samares Kar and published by Springer Science & Business Media. This book was released on 2013-06-25 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects." .

Download or read book Materials and Failures in MEMS and NEMS written by Atul Tiwari and published by John Wiley & Sons. This book was released on 2015-09-11 with total page 435 pages. Available in PDF, EPUB and Kindle. Book excerpt: The fabrication of MEMS has been predominately achieved by etching the polysilicon material. However, new materials are in large demands that could overcome the hurdles in fabrication or manufacturing process. Although, an enormous amount of work being accomplished in the area, most of the information is treated as confidential or privileged. It is extremely hard to find the meaningful information for the new or related developments. This book is collection of chapters written by experts in MEMS and NEMS technology. Chapters are contributed on the development of new MEMS and NEMS materials as well as on the properties of these devices. Important properties such as residual stresses and buckling behavior in the devices are discussed as separate chapters. Various models have been included in the chapters that studies the mode and mechanism of failure of the MEMS and NEMS. This book is meant for the graduate students, research scholars and engineers who are involved in the research and developments of advanced MEMS and NEMS for a wide variety of applications. Critical information has been included for the readers that will help them in gaining precise control over dimensional stability, quality, reliability, productivity and maintenance in MEMS and NEMS. No such book is available in the market that addresses the developments and failures in these advanced devices.