Download or read book Electromigration in Gold Interconnects written by Stephen Kilgore and published by . This book was released on 2013 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization compatible with gallium arsenide (GaAs) was required in the development of high-powered radio frequency (RF) compound semiconductor devices operating at higher current densities and elevated temperatures. Gold-based metallization was implemented on GaAs devices because it uniquely forms a very low resistance ohmic contact and gold interconnects have superior electrical and thermal conductivity properties. Gold (Au) was also believed to have improved resistance to electromigration due to its higher melting temperature, yet electromigration reliability data on passivated Au interconnects is scarce and inadequate in the literature. Therefore, the objective of this research was to characterize the electromigration lifetimes of passivated Au interconnects under precisely controlled stress conditions with statistically relevant quantities to obtain accurate model parameters essential for extrapolation to normal operational conditions. This research objective was accomplished through measurement of electromigration lifetimes of large quantities of passivated electroplated Au interconnects utilizing high-resolution in-situ resistance monitoring equipment. Application of moderate accelerated stress conditions with a current density limited to 2 MA/cm2 and oven temperatures in the range of 300°C to 375°C avoided electrical overstress and severe Joule-heated temperature gradients. Temperature coefficients of resistance (TCRs) were measured to determine accurate Joule-heated Au interconnect film temperatures. A failure criterion of 50% resistance degradation was selected to prevent thermal runaway and catastrophic metal ruptures that are problematic of open circuit failure tests. Test structure design was optimized to reduce resistance variation and facilitate failure analysis. Characterization of the Au microstructure yielded a median grain size of 0.91 ìm. All Au lifetime distributions followed log-normal distributions and Black's model was found to be applicable. An activation energy of 0.80 ± 0.05 eV was measured from constant current electromigration tests at multiple temperatures. A current density exponent of 1.91 was extracted from multiple current densities at a constant temperature. Electromigration-induced void morphology along with these model parameters indicated grain boundary diffusion is dominant and the void nucleation mechanism controlled the failure time.

Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electro migration in integrated circuits. It is intended for both beginner and advanced readers on electro migration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electro migration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electro migration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electro migration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electro migration are presented in a concise and rigorous manner.Methods of numerical modeling for the interconnect electro migration and their applications to the understanding of electro migration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electro migration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electro migration are outlined and discussed.

Download or read book Electromigration In Ulsi Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010-06-25 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained.The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.

Download or read book Fundamentals of Electromigration Aware Integrated Circuit Design written by Jens Lienig and published by Springer. This book was released on 2018-02-23 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.

Download or read book 3D Microelectronic Packaging written by Yan Li and published by Springer Nature. This book was released on 2020-11-23 with total page 629 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a comprehensive reference guide for graduate students and professionals in both academia and industry, covering the fundamentals, architecture, processing details, and applications of 3D microelectronic packaging. It provides readers an in-depth understanding of the latest research and development findings regarding this key industry trend, including TSV, die processing, micro-bumps for LMI and MMI, direct bonding and advanced materials, as well as quality, reliability, fault isolation, and failure analysis for 3D microelectronic packages. Images, tables, and didactic schematics are used to illustrate and elaborate on the concepts discussed. Readers will gain a general grasp of 3D packaging, quality and reliability concerns, and common causes of failure, and will be introduced to developing areas and remaining gaps in 3D packaging that can help inspire future research and development.

Download or read book Proceedings of the Symposium on Electromigration of Metals and First International Symposium on Multilevel Metallization and Packaging written by James R. Lloyd and published by . This book was released on 1985 with total page 214 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book High Speed VLSI Interconnections written by Ashok K. Goel and published by John Wiley & Sons. This book was released on 2007-10-19 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Second Edition focuses on emerging topics and advances in the field of VLSI interconnections In the decade since High-Speed VLSI Interconnections was first published, several major developments have taken place in the field. Now, updated to reflect these advancements, this Second Edition includes new information on copper interconnections, nanotechnology circuit interconnects, electromigration in the copper interconnections, parasitic inductances, and RLC models for comprehensive analysis of interconnection delays and crosstalk. Each chapter is designed to exist independently or as a part of one coherent unit, and several appropriate exercises are provided at the end of each chapter, challenging the reader to gain further insight into the contents being discussed. Chapter subjects include: * Preliminary Concepts * Parasitic Resistances, Capacitances, and Inductances * Interconnection Delays * Crosstalk Analysis * Electromigration-Induced Failure Analysis * Future Interconnections High-Speed VLSI Interconnections, Second Edition is an indispensable reference for high-speed VLSI designers, RF circuit designers, and advanced students of electrical engineering.

Download or read book Harsh Environment Electronics written by Ahmed Sharif and published by John Wiley & Sons. This book was released on 2019-08-05 with total page 398 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides in-depth knowledge on novel materials that make electronics work under high-temperature and high-pressure conditions This book reviews the state of the art in research and development of lead-free interconnect materials for electronic packaging technology. It identifies the technical barriers to the development and manufacture of high-temperature interconnect materials to investigate into the complexities introduced by harsh conditions. It teaches the techniques adopted and the possible alternatives of interconnect materials to cope with the impacts of extreme temperatures for implementing at industrial scale. The book also examines the application of nanomaterials, current trends within the topic area, and the potential environmental impacts of material usage. Written by world-renowned experts from academia and industry, Harsh Environment Electronics: Interconnect Materials and Performance Assessment covers interconnect materials based on silver, gold, and zinc alloys as well as advanced approaches utilizing polymers and nanomaterials in the first section. The second part is devoted to the performance assessment of the different interconnect materials and their respective environmental impact. -Takes a scientific approach to analyzing and addressing the issues related to interconnect materials involved in high temperature electronics -Reviews all relevant materials used in interconnect technology as well as alternative approaches otherwise neglected in other literature -Highlights emergent research and theoretical concepts in the implementation of different materials in soldering and die-attach applications -Covers wide-bandgap semiconductor device technologies for high temperature and harsh environment applications, transient liquid phase bonding, glass frit based die attach solution for harsh environment, and more -A pivotal reference for professionals, engineers, students, and researchers Harsh Environment Electronics: Interconnect Materials and Performance Assessment is aimed at materials scientists, electrical engineers, and semiconductor physicists, and treats this specialized topic with breadth and depth.

Download or read book Nanoelectronics Nanowires Molecular Electronics and Nanodevices written by Krzysztof Iniewski and published by McGraw Hill Professional. This book was released on 2010-08-22 with total page 559 pages. Available in PDF, EPUB and Kindle. Book excerpt: The latest advances in nanoelectronics This definitive volume addresses the state of the art in nanoelectronics, covering nanowires, molecular electronics, and nanodevices. Written by global experts in the field, Nanoelectronics discusses cutting-edge techniques and emerging materials, such as carbon nanotubes and quantum dots. This pioneering work offers a comprehensive survey of nanofabrication options for use in next-generation technologies. Nanoelectronics covers: Electrical properties of metallic nanowires Electromigration defect nucleation in damascene copper interconnect lines Carbon nanotube interconnects in CMOS integrated circuits Printed organic electronics One-dimensional nanostructure-enabled chemical sensing Cross-section fabrication and analysis of nanoscale device structures and complex organic electronics Microfabrication and applications of nanoparticle-doped conductive polymers Single-electron conductivity in organic nanostructures for transistors and memories Synthesis of molecular bioelectronic nanostructures Nanostructured electrode materials for advanced Li-ion batteries Quantum-dot devices based on carbon nanotubes Carbon nanotubes as electromechanical actuators Low-level nanoscale electrical measurements and ESD Nanopackaging

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electromigration in Cu Interconnects written by Dr. Arijit Roy and published by LAP Lambert Academic Publishing. This book was released on 2011-07 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is intended for the beginners and the advanced readers. Electromigration is VLSI/ULSI interconnection remains one of the major failure issues in microelectronics and electromigration remains an attractive research area in last few decades. This work attempts to explore the driving force formalism of the electromigration phenomenon.The prime interest of this work is to investigate the physics of failure in submicron (down to 100 nm wide) Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. In order to develop the combined driving force model, commercial finite element analysis package is used. Plenty of experiments on Cu damascene interconnects are conducted, and extensive failure analyses are performed to investigate the root causes of electromigration failure. Good correlations between the model predictions and experiments are obtained. The future challenges on the study of electromigration are also discussed.

Download or read book Electromigration Failure and Reliability of Single crystal and Polycyrstalline Aluminum Interconnects for Integrated Circuits written by Young-Chang Joo and published by . This book was released on 1995 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book A One Semester Course in Modeling of VSLI Interconnections written by Ashok Goel and published by Momentum Press. This book was released on 2014-12-29 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantitative understanding of the parasitic capacitances and inductances, and the resultant propagation delays and crosstalk phenomena associated with the metallic interconnections on the very large scale integrated (VLSI) circuits has become extremely important for the optimum design of the state-of-the-art integrated circuits. More than 65 percent of the delays on the integrated circuit chip occur in the interconnections and not in the transistors on the chip. Mathematical techniques to model the parasitic capacitances, inductances, propagation delays, crosstalk noise, and electromigration-induced failure associated with the interconnections in the realistic high-density environment on a chip will be discussed. A One-Semester Course in Modeling of VLSI Interconnections also includes an overview of the future interconnection technologies for the nanotechnology circuits.

Download or read book VLSI Metallization written by Norman G. Einspruch and published by Academic Press. This book was released on 2014-12-01 with total page 491 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 15: VLSI Metallization discusses the various issues and problems related to VLSI metallization. It details the available solutions and presents emerging trends. This volume is comprised of 10 chapters. The two introductory chapters, Chapter 1 and 2 serve as general references for the electrical and metallurgical properties of thin conducting films. Subsequent chapters review the various aspects of VLSI metallization. The order of presentation has been chosen to follow the common processing sequence. In Chapter 3, some relevant metal deposition techniques are discussed. Chapter 4 presents the methods of VLSI lithography and etching. Conducting films are first deposited at the gate definition step; therefore, the issues related to gate metallization are discussed next in Chapter 5.In Chapter 6, contact metallization is elaborated, and Chapter 7 is devoted to multilevel metallization schemes. Long-time reliability is the subject of Chapter 8, which discusses the issues of contact and interconnect electromigration. GaAs metallization is tackled in Chapter 9. The volume concludes with a general discussion of the functions of interconnect systems in VLSI. Materials scientists, processing and design engineers, and device physicists will find the book very useful.

Download or read book Handbook of Solid State Diffusion Volume 2 written by Aloke Paul and published by Elsevier. This book was released on 2017-04-13 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Solid State Diffusion, Volume 2: Diffusion Analysis in Material Applications covers the basic fundamentals, techniques, applications, and latest developments in the area of solid-state diffusion, offering a pedagogical understanding for students, academicians, and development engineers. Both experimental techniques and computational methods find equal importance in the second of this two volume set. Volume 2 covers practical issues on diffusion phenomena in bulk, thin film, and in nanomaterials. Diffusion related problems and analysis of methods in industrial applications, such as electronic industry, high temperature materials, nuclear materials, and superconductor materials are discussed. - Presents a handbook with a short mathematical background and detailed examples of concrete applications of the sophisticated methods of analysis - Enables readers to learn the basic concepts of experimental approaches and the computational methods involved in solid-state diffusion - Covers bulk, thin film, and nanomaterials - Introduces the problems and analysis in important materials systems in various applications - Collates contributions from academic and industrial problems from leading scientists involved in developing key concepts across the globe

Download or read book Stress Induced Phenomena in Metallization written by P. S. Ho and published by A I P Press. This book was released on 1996 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Annotation Proceedings of the June 1995 workshop, reporting on new and basic results in electromigration and stress-induced void formation. Sections on stress characteristics and void formation in thin films and interconnects, and electromigration and damage mechanisms in interconnects, contain research in areas such as stresses in passivated gold and metal lines; electrical measurement of stress- induced void growth; modeling electromigration in multi-level interconnects; comparison of electromigration in submicron Al(Cu) and Cu thin-film lines; and resistance oscillations induced by DC electromigration. No index. Annotation c. by Book News, Inc., Portland, Or.

Download or read book Carbon Nanotube Based VLSI Interconnects written by Brajesh Kumar Kaushik and published by Springer. This book was released on 2014-11-01 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: The brief primarily focuses on the performance analysis of CNT based interconnects in current research scenario. Different CNT structures are modeled on the basis of transmission line theory. Performance comparison for different CNT structures illustrates that CNTs are more promising than Cu or other materials used in global VLSI interconnects. The brief is organized into five chapters which mainly discuss: (1) an overview of current research scenario and basics of interconnects; (2) unique crystal structures and the basics of physical properties of CNTs, and the production, purification and applications of CNTs; (3) a brief technical review, the geometry and equivalent RLC parameters for different single and bundled CNT structures; (4) a comparative analysis of crosstalk and delay for different single and bundled CNT structures; and (5) various unique mixed CNT bundle structures and their equivalent electrical models.