Download or read book Electrical Properties of Silicon Doped by Ion Implantation Publ By Physics Laboratory III Technical University of Denmark written by F. Palmgren Jensen and published by . This book was released on 1968 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Properties of Silicon Doped by Ion Implantation written by Finn Palmgren Jensen and published by . This book was released on 1968 with total page 147 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Electrical Properties of Ion Implanted Silicon written by Peter Burr and published by . This book was released on 1970 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Electrical and Physiochemical Characterization written by and published by Academic Press. This book was released on 1997-05-23 with total page 321 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical and physico-chemical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Download or read book Silicon device fabrication by ion implantation with special emphasis on strain gauges and mos devices written by Erik Sletten and published by . This book was released on 1975 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Library of Congress Catalog written by Library of Congress and published by . This book was released on 1970 with total page 656 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Properties of Doped Semiconductors written by B.I. Shklovskii and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.

Download or read book Library of Congress Catalogs written by Library of Congress and published by . This book was released on 1976 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book The Dopant Density and Temperature Dependence of Electron Mobility and Resistivity in N type Silicon written by Sheng S. Li and published by . This book was released on 1977 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1987 with total page 862 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Properties of Silicon implanted GAs written by Yong Yun Kim (CAPT, ROKA.) and published by . This book was released on 1982 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book INIS Atomindeks written by and published by . This book was released on 1984 with total page 1344 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Effect of Disorder and Defects in Ion Implanted Semiconductors Optical and Photothermal Characterization written by and published by Academic Press. This book was released on 1997-06-12 with total page 335 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination

Download or read book Electrical Properties of Nitrogen and Oxygen Ion Implanted Silicon written by Vince Peter Tovizi and published by . This book was released on 1976 with total page 179 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Studies of the Electrical and Optical Properties of Defects in Ion Implanted Silicon written by Byron J. Villis and published by . This book was released on 2010 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics and Modeling of Ion Implantation Induced Transient Deactivation and Diffusion Processes in Boron Doped Silicon written by Srinivasan Chakravarthi and published by . This book was released on 2001 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Integrated Silicon Device Technology Physical electrical properties of silicon written by Research Triangle Institute and published by . This book was released on 1963 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: