Download or read book Electrical Properties of Gallium Arsenide real Surfaces written by Theodoros Michael Valahas and published by . This book was released on 1969 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Surface Chemistry and Surface Electronic Properties of Gallium Arsenide and Gallium Nitride written by Jingxi Sun and published by . This book was released on 2000 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Study of Electronic and Optical Properties of Gallium Arsenide Surfaces and Interfaces written by Marko Mykola Gregory Slusarczuk and published by . This book was released on 1979 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Dielectric Films on Gallium Arsenide written by W. F. Croydon and published by Gordon & Breach Publishing Group. This book was released on 1981 with total page 166 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electronic Properties of the 110 surface of Gallium Arsenide and other III V compounds written by Arie Huijser and published by . This book was released on 1979 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.

Download or read book Gallium Arsenide written by John Sydney Blakemore and published by Springer Science & Business Media. This book was released on 1987 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical properties of gallium arsenide written by Tin Sek Lau and published by . This book was released on 1964 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Properties of Solids written by T. F. Connolly and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since 1963 the Research Materials Information Center has been answering inquiries on the availability, preparation, and properties of ultrapure inorganic research specimens. It has been possible to do this with reasonable efficiency by searching an automated coded microfilm collection of the report and open literature and of data sheets and question naires provided by commercial and research producers of pure materials. With the growth of the collection to over 70,000 documents and the increase in the demand for more general background information, it has been necessary to compile bibliographies on an increasing variety of subjects. These have been used as indexes to the microfilmed documents for more efficient searching, and in the past distributed in response to individual requests. However, their size and number no longer permit so casual and uneconomic a method of distribution. The "ORNL Solid State Physics Literature Guides" is a practical alternative. Organization The subject organization of the bibliography is given by the Table of Contents. Each section is preceded by a collection of reviews, bibliographies, and "general" papers (i.e., those dealing with methods or equipment rather than single materials, or with such a wide variety of materials that no subsection was appropriate). Coverage is generally from 1960 to mid-1970. Emphasis is on inorganic materials.

Download or read book Properties of Lattice matched and Strained Indium Gallium Arsenide written by Pallab Bhattacharya and published by Inst of Engineering & Technology. This book was released on 1993 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.

Download or read book Electrical Properties of Gallium Arsenide Fet Structures written by Fanling Hsu Yang and published by . This book was released on 1984 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical properties of gallium arsenide implanted with sulphur written by B. Kearton and published by . This book was released on 1977 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Analytical Study of Zinc Diffusion in Gallium Arsenide and the Electrical Properties of the Resulting Diffused Layers written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1964 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: This study undertakes: first, to establish the relationship of these anomalous profiles to the diffusion equation; second, to calculate the relationship among the parameters of the zinc-diffused layers; and third, to measure the resistivity of GaAs as a function of zinc concentration. The results of this study provide: first, a procedure for calculating concentration profiles for various surface concentrations for a system such as zinc in GaAs when only two experimentally measured profiles are known; second, design data concerning the electrical properties of the zinc-diffused layers; and third, measurements of resistivity as a function of zinc concentration in heavily doped GaAs.

Download or read book Electrical properties of implanted layers in gallium arsenide written by John Ernest Tansey and published by . This book was released on 1973 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Gallium Arsenide and Related Compounds 1991 Proceedings of the Eighteenth INT Symposium 9 12 September 1991 Seattle USA written by Gerald B. Stringfellow and published by CRC Press. This book was released on 2020-11-26 with total page 696 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.

Download or read book Gallium Arsenide written by M. J. Howes and published by . This book was released on 1985 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the seventh volume in the Wiley Series in Solid State Devices and Circuits, and deals comprehensively with the use of gallium arsenide for high frequency and high speed circuits.