Download or read book Electrical Properties of Gallium Arsenide Fet Structures written by Fanling Hsu Yang and published by . This book was released on 1984 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical Properties of GaAs FET Structures written by Fanling Hsu Yang and published by . This book was released on 1983 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: The electrical properties of ion-implanted GaAs FET channels are investigated by two methods. First, the channel current (I) as a function of voltage (V) is examined at different temperatures and using different voltage ramp rates. The standard FET I-V curve, which can be observed on a commercial curve tracer, is not observed at slow ramp rates. The curve exhibits an abrupt decrease above 220°K and a stepwise increase at lower temperatures. A model based on the effect of electron transfer deferred by deep traps is established to explain the anomalous current dropback phenomenon. Impact ionization of trapped electrons is believed to happen at different spatial positions along the channel at different temperatures. The actual position at which impact ionization occurs depends on the thermal properties of the involved trap which is identified to have energy level at .47 ± .05 ev below the conduction band edge. The I-V characteristic of the channel is strongly affected by the excessive field strength generated through impact ionization. This model explains the observed phenomena consistently. In the second investigation method, the deep traps existing along the FET channel are examined via the Deep Level Transient Spectroscopy (DLTS) technique. Standard transient analysis is discussed and shown to be inadequate for ion-implanted samples. A new model based on a more realistic trapezoidal doping profile is derived and simulated. The simulation results are compared with experimental data and excellent agreement is obtained. A hole-like DLTS peak experimentally obtained from an n-GaAs Schottky diode is successfully simulated by the new model and shown to be an artifact due to the tail portion of the doping profile. Capacitance versus voltage (C-V) measurement confirms that the trapezoidal doping concentration is an idealized approximation for ion-implanted samples. These two approaches significantly improve the understanding of defect-related electrical properties of ion-implanted GaAs FET devices and contribute to a better knowledge of device characterization.
Download or read book GaAs High Speed Devices written by C. Y. Chang and published by John Wiley & Sons. This book was released on 1994-10-28 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Download or read book The Electrical Properties of Sputtered Gallium Arsenide Films written by Rodney J. Soukup and published by . This book was released on 1976 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt: As a consequence of the difficulty in making measurements on planar GaAs samples this study concentrated on metal-GaAs-metal (Al, Mg, Mn) sandwich structures. The alternating current and direct current measurements made on these structures are described and the results are presented. The objective was to determine the electrical properties of highly disordered films of GaAs deposited by sputtering with and without co-sputtering of p-type and n-type dopants. The ac analysis included a measure of the impedance, magnitude and phase angle, of these structures over a wide range of frequencies and temperatures. The results indicated that the model which describes these structures is a series combination of two parallel RC networks. The physical model which would result in this equivalent circuit model is that of a leaky Schottky barrier in series with 'bulk'. As a check on this model the equivalent parallel capacitance of these structures was measured at high and low frequency and over a temperature range and these results verified this conclusion.
Download or read book Gallium Arsenide and Related Compounds 1993 Proceedings of the 20th INT Symposium 29 August 2 September 1993 Freiburg im Braunschweig Germany written by Günter Weimann and published by CRC Press. This book was released on 1994-01-01 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Lattice matched and Strained Indium Gallium Arsenide written by Pallab Bhattacharya and published by Inst of Engineering & Technology. This book was released on 1993 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.
Download or read book Structural and Electrical Properties of Iron magnesium oxide gallium arsenide Heterostructures written by and published by . This book was released on 2014 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide for Devices and Integrated Circuits written by Hugh Thomas and published by . This book was released on 1986 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book GaAs FET Principles and Technology written by James V. DiLorenzo and published by Artech House Publishers. This book was released on 1982 with total page 808 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Electrical properties of gallium arsenide written by Tin Sek Lau and published by . This book was released on 1964 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Basic Properties of III V Devices Understanding Mysterious Trapping Phenomena written by Kompa, Günter and published by kassel university press GmbH. This book was released on 2014 with total page 762 pages. Available in PDF, EPUB and Kindle. Book excerpt: Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Download or read book Electrical Properties of Gallium Arsenide real Surfaces written by Theodoros Michael Valahas and published by . This book was released on 1969 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Download or read book Gallium Arsenide written by M. J. Howes and published by . This book was released on 1985 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the seventh volume in the Wiley Series in Solid State Devices and Circuits, and deals comprehensively with the use of gallium arsenide for high frequency and high speed circuits.
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on with total page 994 pages. Available in PDF, EPUB and Kindle. Book excerpt:
