Download or read book Electrical Properties and Photoluminescence of Germanium implanted Gallium Arsenide written by Siu Sing Chan and published by . This book was released on 1980 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: The data presented show that Ge-implanted GaAs has a complex amphoteric behavior which is controlled by the implantation dose, implantation temperature and anneal temperature. Annealing was performed with r.f. plasma deposited Si3N4 as the encapsulant. Implantations at -100 C resulted in p-layers while those performed at 100 C and above resulted in n-layers regardless of the dose and anneal temperature. Room temperature implants resulted in p- or n-layers depending on the combination of dose and anneal temperature. Electrical activation and carrier mobilities in the implanted layers were low. Low temperature (6 K) photoluminescence indicated that a significant amount of residual damage remained after annealing. Carrier concentration profiles in implanted layers and junction characteristics of Ge-implanted GaAs planar diodes are also presented. (Author).

Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Study of Germanium Implanted Gallium Arsenide written by Barry P. Thoma and published by . This book was released on 1985 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: The low temperature photoluminescence properties of Ge implanted Gallium Arsenide has been analyzed. Samples were singly implanted with Ge and As, and with Ge and Ga. The substrate used was semi-insulating Chromium-doped GaAs. All ions were implanted at room temperature, with an implantation energy of 120 KeV. Dually implanted samples were first implanted with Ge, and then with either As or Ga. All samples were encapsulated before annealing with approximately 1000 A of Silicon Nitride which was subsequently removed prior to photoluminescence measurements. All samples were annealed at 900 C for 15 minutes. Two separate photoluminescence peaks related to Ge acceptors were found. They were due to a Ge donor-Ge acceptor transition and a conduction band-Ge acceptor transition. A single photoluminescence peak related to Ge donors was found. It was due to an exciton bound to a neutral donor or an ionized donor transition. Ge acceptor related peaks were found to be dominant in lower dose Ge implanted samples, and the Ge donor related peak was found to be dominant in higher dose Ge implanted samples. These characteristics were significantly modified, however, by the dual implantations. The Ge donor related peak was enhanced, and the Ge acceptor related peaks were suppressed, by the additional As implantation. To a lesser extent, the opposite was true for the additional Ga implantation.

Download or read book Electrical Properties of Gallium Arsenide Doubly Implanted with Germanium and Gallium written by Quazi T. Islam and published by . This book was released on 1980 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Photoluminescence Study of Germanium Implanted Gallium Arsenide written by Barry P. Thoma (CAPT, USAF.) and published by . This book was released on 1986 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Characterization of Germanium Implanted Gallium Arsenide written by Frank L. Pedrotti and published by . This book was released on 1980 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: The amphoteric electrical properties of germanium single implants into gallium arsenide, and of dual implants of germanium with either gallium or arsenic into gallium arsenide, have been studied. Room temperature implantation was performed for all implanted ions at 120 keV, with doses ranging from 5E12 to 3E15 ions per square centimeter. Implanted samples were annealed with pyrolytic silicon nitride encapsulants at temperatures ranging from 700 to 1000 degrees Celsius. Both p- and n-type layers were observed. Type of conductivity, electrical activation, and carrier mobility were found to depend critically upon ion dose and anneal temperature. The general electrical behavior suggests that in samples of lower dose and anneal temperature, the implanted Ge ions go into As sites preferentially, producing p-type activity, whereas in samples of higher dose and anneal temperature, more Ge ions go into Ga sites, producing n-type activity. Conductivity was found to change from p- to n-type at an intermediate dose of 3E14 ions per square centimeter and at an anneal temperature between 900 and 950 degrees Celsius. It has been determined that additional implantation of As into GaAs:Ge favors Ge occupancy of Ga sites and an enhancement of n-type activity, whereas the additional implantation of Ga encourages Ge occupancy of As sites and an enhancement of p-type activity. Enhancement factors of as much as 8 for p-type activations, and as much as 50 for n-type activations have been measured. (Author).

Download or read book Technical Abstract Bulletin written by and published by . This book was released on 1979 with total page 1186 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide written by Richard Dana Pashley and published by . This book was released on 1974 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt: Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.

Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Optical Study of Germanium Germanium Plus Arsenic and Germanium Plus Gallium Implants in Gallium Arsenide written by Thomas G. Alley and published by . This book was released on 1987 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: The low temperature photoluminescence (PL) properties of single implants of Germanium and dual implants of GE+Arsenic or Ge+Gallium into semi-insulating Chromium-doped Gallium Arsenide have been analyzed. Room temperature implantation was performed at 120 keV. When dual implantation was used, samples were implanted at the same dose and energy. Ion doses ranged from 1 x 10 to the 13th power to 1 x 10 to the 15th power/cm2. Samples were encapsulated with Silicon Nitride and then annealed at temperatures ranging from 700 to 950 C. Si3N4 was removed prior to PL measurements. A PL peak due to Ge-acceptors was identified. A bound exciton peak related to Ge-donors was also observed. An acceptor peak due to residual Silicon was found in all samples. The heights of the Ge-acceptor peak and exciton peak were compared to the height of the intrinsic Si-acceptor peak. The height comparison was used in an effort to find trends of Ge-acceptor and Ge-donor transitions as a function of anneal temperature and ion dose.

Download or read book An Investigation of Temperature Dependence of Electrical Properties in Ion implanted Gallium Arsenide written by A. K. M. Matior Rahman and published by . This book was released on 1986 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Electrical and Optical Properties of Semi insulating and Ion implanted Gallium arsenide and Indium phosphide written by Jin Koo Rhee and published by . This book was released on 1982 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Emerging Semiconductor Technology written by Dinesh C. Gupta and published by ASTM International. This book was released on 1987 with total page 701 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Physics Briefs written by and published by . This book was released on 1990 with total page 1286 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.